Autor: Choiński, D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Distributed control systems integration and management with an ontology-based multi-agent system
Autorzy:: Choiński, D.
Senik, M.
Powiązania:: https://bibliotekanauki.pl/articles/201395.pdf
Data publikacji:: 2018
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: distributed control system
multi-agent system
software based integration systems
ontology
Petri nets
system wieloagentowy
ontologia
sieci Petriego
inteligentny system kontroli
Opis:: The purpose of this study is to create, analyze and reuse an ontology-based approach during implementation of a multi-agent system (MAS) capable of integrating different elements of a distributed control system (DCS). Ontology is considered as knowledge about a particular domain. It includes static description of the domain’s structure and properties, by means of which it is possible to define the domain’s dynamic states, transitions between those states and conditions of those transitions. Because of that, it is possible to analyze such ontology in terms of modal logic in predicate logic settings.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2018, 66, 5; 613-620
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed
Autorzy:: Żymierska, D.
Godwod, K.
Adamczewska, J.
Auleytner, J.
Choiński, J.
Regiński, K.
Powiązania:: https://bibliotekanauki.pl/articles/2030690.pdf
Data publikacji:: 2002-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
61.80.-x
61.10.-i
85.40.Ry
Opis:: The paper presents high-resolution X-ray diffraction studies performed for Si single crystal: as-grown, implanted with a 5×10$\text{}^{14}$ ions· cm$\text{}^{-2}$ dose of 3 MeV/n Ar ions, as well as implanted and annealed in a very high vacuum. The results are discussed on the basis of rocking curves and the mathematical analysis of the reciprocal space maps. It is shown that the lattice parameter is increased in an implanted part of the crystal, but long distance lattice curvature is not present. After annealing full relaxation of the crystal is stated.
Źródło:: Acta Physica Polonica A; 2002, 101, 5; 743-750
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
Autorzy:: Datsenko, L.
Żymierska, D.
Auleytner, J.
Klinger, D.
Machulin, V.
Klad'ko, V.
Melnik, V.
Prokopenko, I.
Czosnyka, T.
Choiński, J.
Powiązania:: https://bibliotekanauki.pl/articles/2011007.pdf
Data publikacji:: 1999-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
61.10.-i
61.72.-y
Opis:: The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10$\text{}^{14}$ particles/cm$\text{}^{2}$ is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α$\text{}_{1}}$, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
Źródło:: Acta Physica Polonica A; 1999, 96, 1; 137-142
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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