Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Borysiewicz, A." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 20
Tytuł:
Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors
Autorzy:
Struk, P.
Pustelny, T.
Gołaszewska, K.
Borysiewicz, M. A.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/200967.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ZnO
semiconductor
gas sensors
Zno
czujniki gazu
półprzewodnik
Opis:
The paper presents the results of investigations of zinc oxide (ZnO) layers as a potential sensing material, being affected by certain selected gaseous environments. The investigations concerned the optical transmission through thin ZnO layers in wide spectral ranges from ultraviolet to the near infrared. The effect of the gaseous environment on the optical properties of zinc oxide layers with a thickness of ~ 400 nm was analyzed applying various technologies of ZnO manufacturing. Three kinds of ZnO layers were exposed to the effect of the gaseous environment, viz.: layers with relatively slight roughness (RMS several nm), layers with a considerable surface roughness (RMS some score of nm) and layers characterized by porous ZnO structures. The investigations concerned spectral changes in the transmission properties of the ZnO layers due to the effect of such gases as: ammonia (NH3), hydrogen (H2), and nitrogen dioxide (NO2) in the atmosphere of synthetic air. The obtained results indicated the possibility of applying porous ZnO layered structures in optical gas sensors.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 4; 829-836
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
Autorzy:
Struk, P.
Pustelny, T.
Gołaszewska, K.
Borysiewicz, M. A.
Kamińska, E.
Wojciechowski, T.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/220412.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Wide band gap oxide semiconductors
ZnO
integrated optics structures
planar waveguides
Opis:
The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
Źródło:
Metrology and Measurement Systems; 2014, 21, 3; 401-412
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
Autorzy:
Borysiewicz, M. A.
Pasternak, I.
Dynowska, E.
Jakieła, R.
Kolkovski, V.
Dużyńska, A.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048109.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
61.05.cp
68.37.Hk
68.37.Ps
68.49.Sf
78.55.Et
Opis:
ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 686-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recognition of the atmospheric contamination source localization with the Genetic Algorithm
Autorzy:
Wawrzynczak, A.
Jaroszynski, M.
Borysiewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/92891.pdf
Data publikacji:
2015
Wydawca:
Uniwersytet Przyrodniczo-Humanistyczny w Siedlcach
Tematy:
genetic algorithm
source characterization
atmospheric dispersion model
Opis:
We have applied the Genetic Algorithm (GA) to the problem of the atmospheric contaminant source localization. The algorithm input data are concentrations of given substance registered by sensor network. To achieve rapid-response event reconstruction,the fast-running Gaussian plume dispersion model is adopted as the forward model. The proposed GA scans 5-dimensional parameters space searching for the contaminant source coordinates (x,y), release strength (Q) and the atmospheric transport dispersion coefficients. Based on the synthetic experiment data the GA parameters like population size, number of generations and the genetic operators best suitable for the algorithm performance are identified. We demonstrate that proposed GA configuration can successfully point out the parameters of abrupt contamination source. Results indicate the probability of a source to occur at a particular location with a particular release rate. The shapes of the probability distribution function of searched parameters values reflect the uncertainty in observed data.
Źródło:
Studia Informatica : systems and information technology; 2015, 1-2(19); 27-42
1731-2264
Pojawia się w:
Studia Informatica : systems and information technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localizing of the atmospheric contamination source based on the Kori field tracer experiment data
Autorzy:
Kopka, P.
Wawrzynczak, A.
Borysiewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/406603.pdf
Data publikacji:
2015
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
sequential Monte Carlo methods
accidental releases into the atmosphere
emergency reaction system
Opis:
Accidental releases of hazardous material into the atmosphere pose high risks to human health and the environment. Thus it would be valuable to develop an emergency reaction system which can recognize the probable location of the source based only on concentrations of the released substance as reported by a network of sensors. We apply a methodology combining Bayesian inference with Sequential Monte Carlo (SMC) methods to the problem of locating the source of an atmospheric contaminant. The input data for this algorithm are the concentrations of a given substance gathered continuously in time. We employ this algorithm to locating a contamination source using data from a field tracer experiment covering the Kori nuclear site and conducted in May 2001. We use the second-order Closure Integrated PUFF Model (SCIPUFF) of atmospheric dispersion as the forward model to predict concentrations at the sensors’ locations. We demonstrate that the source of continuous contamination may be successfully located even in the very complicated, hilly terrain surrounding the Kori nuclear site.
Źródło:
Operations Research and Decisions; 2015, 25, 2; 35-50
2081-8858
2391-6060
Pojawia się w:
Operations Research and Decisions
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Loss of offsite power caused by tornado in Surry NPP : a case study
Autorzy:
Borysiewicz, M.
Kaszko, A.
Kowal, K.
Potempski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2069302.pdf
Data publikacji:
2015
Wydawca:
Uniwersytet Morski w Gdyni. Polskie Towarzystwo Bezpieczeństwa i Niezawodności
Tematy:
Surry NPP
tornado
loss of offsite power
emergency power system
probabilistic safety assessment
Opis:
The aim of this work was to perform the real case study for the US Surry Nuclear Power Plant which was touched down by tornado in 2011 causing the electrical switch yard destruction and loss of offsite power. Probabilistic methods have been applied to assess the reliability of the reactor shutdown and effective heat removal after this accident. The reactor protection system and auxiliary feedwater system were thoroughly analysed in the context of their safety features designed to prevent the reactor core damage. The emergency power system reliability has been also considered due to the fact that some components of the safety systems are electrically operated. Moreover, time-dependent analysis has been performed in order to address the level of damages after an extreme external event like tornado. Depending on the severity of such events the time required to restore the electrical grid may be significantly different and longer than 24 hours. The reliability and requirements for safety systems are changing with time and these changes have been taken into account as well.
Źródło:
Journal of Polish Safety and Reliability Association; 2015, 6, 3; 25--30
2084-5316
Pojawia się w:
Journal of Polish Safety and Reliability Association
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An application IRIDM the decision making process on fuel conversion of the MARIA reactor
Zastosowanie IRIDM w procesie decyzyjnym dotyczącym konwersji paliwa w reaktorze MARIA
Autorzy:
Borysiewicz, M.
Kowal, K.
Prusiński, P. A.
Dabrowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/408038.pdf
Data publikacji:
2013
Wydawca:
Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
Tematy:
nuclear safety
Integrated Risk Informed Decision Making
Research Reactor MARIA
Global Threat Reduction Initiative
nuclear fuel conversion
bezpieczeństwo jądrowe
zintegrowany proces decyzyjny
reaktor badawczy MARIA
Inicjatywa Redukcji Zagrożeń Globalnych
konwersja paliwa
Opis:
Poland, when acceded to GTRI (Global Threat Reduction Initiative) in 2004, has committed to convert the nuclear fuel of the Research Reactor MARIA, operated by the National Centre for Nuclear Research (NCBJ) in Świerk. The conversion means giving up of high enriched uranium fuel containing 36% of U-235, which was used so far, and replacing it with the low enriched uranium fuel (19.7% U-235). This article describes the potential usability of the Integrated Risk Informed Decision Making (IRIDM) methodology in optimization of the fuel conversion procedure.
Polska, przystępując w 2004 roku do programu GTRI (Inicjatywa Redukcji Zagrożeń Globalnych), zobowiązała się do konwersji paliwa jądrowego w reaktorze badawczym MARIA, eksploatowanym przez Narodowe Centrum Badań Jądrowych (NCBJ) w Świerku. Konwersja ta oznacza rezygnację z dotychczas użytkowanego paliwa, zawierającego 36% U-235 i zastąpienie go paliwem nisko wzbogaconym (19.7% U-235). Niniejszy artykuł opisuje potencjalne zastosowanie zintegrowanego procesu decyzyjnego (IRIDM) w optymalizacji procedury konwersji paliwa.
Źródło:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2013, 3; 3-6
2083-0157
2391-6761
Pojawia się w:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An integrated risk informed decision making in the nuclear industry
Zintegrowany proces decyzyjny uwzględniający ryzyko w przemyśle jądrowym
Autorzy:
Borysiewicz, M.
Kowal, K.
Prusiński, P. A.
Dąbrowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/408818.pdf
Data publikacji:
2013
Wydawca:
Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
Tematy:
nuclear safety
Integrated Risk Informed Decision Making
probabilistic safety assessment
Deterministic Safety Assessment
bezpieczeństwo jądrowe
proces decyzyjny
ryzyko
probabilistyczne analizy bezpieczeństwa
deterministyczne analizy bezpieczeństwa
Opis:
The regulatory body, established to ensure safety of nuclear facilities, is expected to make right decisions and provide appropriate regulations for the nuclear industry. The traditional manner of its activity has been based on a deterministic approach to safety analyses. However, increased maturity of Probabilistic Safety Assessment (PSA) makes it complementary to deterministic studies. The new IAEA concept, described in this article, is to apply an integrated approach by combining both deterministic and probabilistic insights with other requirements affecting the decision making process.
Organ regulacyjny, powołany w celu zapewnienia bezpieczeństwa jądrowego, jest odpowiedzialny za podejmowanie decyzji i wprowadzanie rozporządzeń dla przemysłu jądrowego. Tradycyjny sposób jego funkcjonowania opiera się na deterministycznym podejściu do analiz bezpieczeństwa. Rozwój analiz probabilistycznych (PSA) sprawia jednak, iż są one traktowane jako podejście komplementarne. Nowa koncepcja IAEA, opisana w tym artykule, polega na zintegrowanym podejściu, uwzględniającym analizy deterministyczne, probabilistyczne i inne aspekty procesu decyzyjnego.
Źródło:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2013, 2; 22-34
2083-0157
2391-6761
Pojawia się w:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Gas Sensors Based on ZnO Structures
Autorzy:
Struk, P.
Pustelny, T.
Gołaszewska, K.
Borysiewicz, M.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399403.pdf
Data publikacji:
2013-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Hz
42.25.-p
42.82.Et
68.35.Ct
Opis:
The paper presents the results of investigations concerning sensor structures based on porous layers of zinc oxide (ZnO) sensitive to a selected gaseous environment. The investigations comprised analyses of the influence of the gaseous environment on the optical properties of a sensor structure, in particularly on the change of the spectral characteristics of optical transmission within the range of ultraviolet light and in the visible range. These presented investigations were carried out in such a gaseous environment as nitrogen dioxide $NO_2$ in synthetic air.
Źródło:
Acta Physica Polonica A; 2013, 124, 3; 567-569
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
Autorzy:
Taube, A.
Kruszka, R.
Borysiewicz, M.
Gierałtowska, S.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492515.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.dj
77.22.Ch
73.40.Qv
81.15.Gh
81.15.Cd
Opis:
The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
Autorzy:
Borysiewicz, M.
Wojciechowski, T.
Dynowska, E.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1198573.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.70.-m
81.15.Cd
77.55.hf
81.10.Pq
52.27.Cm
Opis:
Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1144-1148
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
Autorzy:
Borysiewicz, M.
Kamińska, E.
Piotrowska, A.
Pasternak, I.
Jakieła, R.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1811915.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.49.Sf
68.55.ag
81.40.Ef
Opis:
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1061-1066
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements
Autorzy:
Przybytek, J.
Stankiewicz, R.
Gryglas-Borysiewicz, M.
Baj, M.
Cavanna, A.
Faini, G.
Powiązania:
https://bibliotekanauki.pl/articles/2048142.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Td
73.40.Gk
Opis:
During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si δ-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 723-725
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Epitaxial Strain on Magnetic Anisotropy in (Ga,Mn)As
Autorzy:
Juszyński, P.
Wasik, D.
Gryglas-Borysiewicz, M.
Przybytek, J.
Szczytko, J.
Twardowski, A.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1403622.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.47.-m
Opis:
Two (Ga,Mn)As samples having different magnetic anisotropy (one with in-plane easy axis and another one with out-of-plane easy axis) were studied by means of magnetotransport experiments. Anisotropy field B_{A} was determined for both samples as a function of temperature. For the sample having in-plane easy axis, an inversion of the direction of planar Hall effect hysteresis was observed upon increase of temperature. This result was simulated using the Stoner-Wohlfarth model.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1004-1006
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
Autorzy:
Lewińska, S.
Gryglas-Borysiewicz, M.
Przybytek, J.
Baj, M.
Jouault, B.
Gennser, U.
Ouerghi, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047930.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
71.20.Nr
73.23.Hk
73.63.Hs
72.10.Di
85.30.Mn
73.40.Gk
Opis:
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 606-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies