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    Wyświetlanie 1-13 z 13
    Tytuł:
    Excess Conductivity of Y$\text{}_{0.95}$Pr$\text{}_{0.05}$Ba$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ Single Crystals
    Autorzy:
    Vovk, R. V.
    Obolenskii, M. A.
    Bondarenko, A. V.
    Goulatis, I. L.
    Chroneos, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047236.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Eh
    72.10.-d
    74.40.+k
    74.72.-h
    Opis:
    In this work we investigate the conductivity in the basis plane of YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ and Y$\text{}_{1-z}$Pr$\text{}_{z}$Ba$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ single crystals with a system of one-direction twin boundaries. The Pr dopants behave as efficient scattering centers of normal and fluctuating carriers. For this a slight doping with praseodymium (till z≈0.05) results in a significant narrowing of the temperature interval in which the pseudo-gap regime is realized in the ab-plane of YBaCuO single crystals.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 129-133
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Scattering Processes of Normal and Fluctuating Carriers in ReBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ (Re = Y, Ho) Single Crystals with Unidirectional Twin Boundaries
    Autorzy:
    Vovk, R. V.
    Obolenskii, M. A.
    Bondarenko, A. V.
    Goulatis, I. I.
    Levy, M. R.
    Chroneos, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047234.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Eh
    72.10.-d
    74.40.+k
    74.72.-h
    Opis:
    The effect of twin boundaries on the normal and fluctuating conductivity of ReBaCuO (Re = Y, Ho) single crystals was investigated. The results indicate that the Lawrence-Doniach theoretical model describes adequately the temperature dependence of the excess conductivity. The twin boundaries are efficient scattering centers for normal and fluctuating carriers. The derived values of the coherence length perpendicular to the ab-planeξ$\text{}_{c}$(0) are in good agreement with those obtained from magnetic measurements for stoichiometric YBaCuO crystals.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 123-128
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402221.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
    Autorzy:
    Andreev, V.
    Bondarenko, G.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1381776.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Qv
    73.40.Gk
    Opis:
    The influence of injection-thermal and plasma treatments on the characteristics of the MOS-structure is studied. It is shown that the thermal stable part of the negative charge which accumulates in the phosphorus-silicate glass (PSG) film in the structures with the two-layer gate dielectric $SiO_2$-PSG under high-field Fowler-Nordheim electron injection can be used for the characteristics modification of MOS-structures with above described structure. The injection-thermal and plasma treatments of MOS-structures are offered to use for improving the reliability and finding the samples which have the charge defects. It is found that using the injection-thermal and plasma treatments allows to increase the injection and radiation stability of the dielectric films of MOS-structures due to structural changes in the $SiO_2$ film and $Si-SiO_2$ interface.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1371-1373
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments
    Autorzy:
    Andreev, D.
    Bondarenko, G.
    Andreev, V.
    Maslovsky, V.
    Stolyarov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030209.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    72.20.Jv
    73.20.At
    73.40.Qv
    73.40.Ty
    77.22.Jp
    77.55.-g
    Opis:
    Methods to modify gate dielectrics of MIS structures by irradiation treatments and high-field electron injection into dielectric are considered. In addition, distinctive features of these methods used to correct parameters of MIS devices are studied. It was found out that negative charge, accumulating in the thin film of phosphosilicate glass (PSG) of the MIS structure having a two-layer gate dielectric SiO_2-PSG under the high-field injection or during the irradiation treatment can be used to correct the threshold voltage to improve the charge stability and raise the voltage of breakdown for the MIS devices. It is proved that the density of electron traps rises with the increasing thickness of the PSG film. In this paper a method to modify electrophysical characteristics of MIS structures by the high-field tunnel injection of electrons into the gate dielectric under the mode of controlled current stress is proposed. The method allows to monitor changing of MIS structure parameters directly during the modification process.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 245-248
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Determination of the main characteristics of the small waterplane area twin hull ships at the initial stage of design
    Autorzy:
    Bondarenko, O. V.
    Boiko, A. P.
    Seropyan, I. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/258950.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Gdańska. Wydział Inżynierii Mechanicznej i Okrętownictwa
    Tematy:
    small waterplane area twin hull ship
    mathematical model
    constraints
    objective function
    optimization
    Opis:
    The basic selecting peculiarities of the optimal project characteristics of the small waterplane area twin hull ships compared to conventional ships are considered. The description of the mathematical model and the ship operating model is given. The choice of the optimization method is justified.
    Źródło:
    Polish Maritime Research; 2013, 1; 11-22
    1233-2585
    Pojawia się w:
    Polish Maritime Research
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Researches of influence of electric current on tribounit "Wheel-rail"
    Issledovanie vlijanija ehlectricheskogo toka na tribosoprjazhenie 'Koleso-rel'c'
    Autorzy:
    Gorbynov, N.
    Nozgenko, V.
    Nozgenko, E.
    Kluev, S.
    Bondarenko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/793000.pdf
    Data publikacji:
    2014
    Wydawca:
    Komisja Motoryzacji i Energetyki Rolnictwa
    Tematy:
    electrical current
    coupling
    heat
    mechanical wear
    friction coefficient
    wheel-rail interaction
    railway rolling stock
    exploitation
    railway transport
    Źródło:
    Teka Komisji Motoryzacji i Energetyki Rolnictwa; 2014, 14, 1
    1641-7739
    Pojawia się w:
    Teka Komisji Motoryzacji i Energetyki Rolnictwa
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    History of creation of the Mining Craft Faculty at the Katerynoslav Higher Technical Mining School (1900-1918)
    Historia powstania Wydziału Sztuki Górniczej w Wyższej Technicznej Szkole Górniczej w Jekaterynosławiu (1900-1918)
    Autorzy:
    Bondarenko, V.I.
    Kuzmenko, O.M.
    Dychkovskiy, R.O.
    Kovalevska, I.A.
    Powiązania:
    https://bibliotekanauki.pl/articles/350532.pdf
    Data publikacji:
    2005
    Wydawca:
    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
    Tematy:
    Ukraina
    górnictwo
    szkolnictwo wyższe
    Ukraine
    mining
    education
    Opis:
    The period of creation of leader faculty at National Mining University in Dnipropetrovsk (Ukraine) is considered. The basic scientific and methodological publications and researches are resulted. Situation in Ukraine mining in the beginning of 20th century are submitted.
    W artykule przedstawiono proces powstawania Wydziału Górniczego, jednego z najważniejszych Wydziałów Narodowego Uniwersytetu Górniczego w Dniepropietrowsku (dawniej Jekaterynosław) na tle sytuacji górnictwa ukraińskiego na początku XX wieku. Zaprezentowano główne kierunki działalności naukowej Wydziału oraz najważniejsze osiągnięcia badawcze.
    Źródło:
    Górnictwo i Geoinżynieria; 2005, 29, 3/2; 13-23
    1732-6702
    Pojawia się w:
    Górnictwo i Geoinżynieria
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Developing measures to eliminate of hydrate formation in underground gas storages
    Autorzy:
    Volovetskyi, V. B.
    Doroshenko, Ya. V.
    Bugai, A. O.
    Kogut, G. M.
    Raiter, P. M.
    Femiak, Y. M.
    Bondarenko, R. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2172156.pdf
    Data publikacji:
    2022
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    well
    flowline
    hydrate formation
    local constraint
    regulating choke
    studnia
    powstawanie hydratów
    współczynnik ograniczenia
    dławik
    Opis:
    Purpose The objective of this article is the analysys of methods for preventing and eliminating hydrates formations, classifying them and choosing the best ones for use in underground gas storage facilities. Comprehensive measures for the stable operation of gas storage facilities in the presence of conditions for the occurrence of hydrates formations were developed. Zones, being potentially prone to the hydrates formation during the gas storage facilities operation were identified. Design/methodology/approach The operational parameters of gas storage wells during gas withdrawal are analyzed. The identified wells were operated under difficult conditions due to the deposition of hydrates on the wellheads, in flowlines and process equipment of gas storage facilities. The places of the highest hydrates accumulation on underground gas storages were determined: from the bottomhole of wells to the gas purification unit of the gas gathering station. Hydrate-prone zones were identified by computational fluid dynamic (CFD) modeling at the location of regulating choke installations in underground gas storage facilities. Findings The zones of the greatest hydrates accumulation on underground gas storages were determined: from the bottomhole of wells to the gas purification unit of the gas gathering station. The analysis of the methods used in gas storage facilities of Ukraine to prevent and eliminate hydrates formation was out. A set of measures was proposed to prevent the hydrates formation in storage facilities to ensure their stable operation. Based on the Euler approach (Mixture model) by CFD modeling, zones prone to hydrates formation were determined at the installation site of regulating chokes in underground gas storages. The influence of the degree of fittings opening on the location of potential zones prone to hydrates formation was estimated. The gas-dynamic processes in the internal cavity of the gas pipeline at the installation site of the control fittings were studied and their influence on the distribution of bulk particles of the gaseous and liquid phases was established. Based on the studies performed, it was recommended to change periodically the mode of well operation for a certain time by opening or closing the regulating choke under favorable conditions for the formation of hydrates, especially at low ambient temperatures. Research limitations/implications The obtained results of experimental studies and calculations showed that in order to solve the problem of hydrates formation at gas storage facilities, it is advisable to use diverse measures through the introduction of modern intelligent systems for monitoring and controlling the technological process. Further refinement of the algorithm of the proposed monitoring and control system with its approbation in production was provided. Practical implications The results of the experimental studies and CFD modeling carried out allowed providing a more reasonable approach to the application of various available methods and measures to prevent hydrates formation in underground gas storage facilities. This approach made it possible to develop new effective ways and measures to prevent such complication. Originality/value Based on the conducted experimental studies and modeling, the major zones prone to hydrates formation in underground gas storages were determined. The developed measures will allow timely detection and prevention of hydrates formation at gas storage facilities are original.
    Źródło:
    Journal of Achievements in Materials and Manufacturing Engineering; 2022, 111, 2; 64--77
    1734-8412
    Pojawia się w:
    Journal of Achievements in Materials and Manufacturing Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    KEr(MoO$\text{}_{4}$)$\text{}_{2}$ and CsDy(MoO$\text{}_{4}$)$\text{}_{2}$ - Low-Dimensional Ising Magnets
    Autorzy:
    Kačmár, M.
    Orendáčová, A.
    Čizmár, E.
    Horváth, D.
    Orendáč, M.
    Bondarenko, V.
    Anders, A. G.
    Feher, A.
    Jaščur, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013657.pdf
    Data publikacji:
    2000-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.40.Cx
    75.10.Hk
    75.40.Mg
    Opis:
    In the present work the behaviour of cluster excitations in magnetic field, B, parallel to the easy axis was experimentally studied by the measurements of KEr(MoO$\text{}_{4}$)$\text{}_{2}$ and CsDy(MoO$\text{}_{4}$)$\text{}_{2}$ specific heat, C, vs. B dependence studied at a constant temperature. Corresponding Monte Carlo simulations of C revealed that despite of the fact that the Ising exchange-coupling models proved useful for a sufficient description of the specific heat of these dipolar systems in B=0, the analysis of current experimental data requires a partial renormalization of exchange-coupling constants previously obtained from B=0 analysis. The influence of crystal field effects and long-range character of spin correlations is discussed.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 5; 807-810
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Functional model for the synthesis of nanostructures of the given quality level
    Autorzy:
    Suchikova, Y.O.
    Kovachov, S.S.
    Shishkin, G.O.
    Pimenov, D.O.
    Lazarenko, A.S.
    Bondarenko, V.V.
    Bogdanov, I.T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175807.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    functional model
    electrochemical etching
    quality level
    semiconductors
    nanostructures
    IDEF0 methodology
    model funkcjonalny
    trawienie elektrochemiczne
    poziom jakości
    półprzewodniki
    nanostruktury
    metodologia IDEF0
    Opis:
    Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 107, 2; 72--84
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modeling of the behavior of in - vessel mirrors for ITER with ECR plasma discharges
    Autorzy:
    Voitsenya, V. S.
    Bardamid, A. F.
    Belyaeva, A. I.
    Bondarenko, V. N.
    Davis, J. W.
    Konovalov, V. G.
    Mukhin, E. E.
    Razdobarin, A. G
    Ryzhkov, I. V.
    Shapoval, A. N.
    Shtan, A. F.
    Skoryk, O. A.
    Solodovchenko, S. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/147820.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    ECR plasma
    mirrors for plasma diagnostics in ITER
    structure
    sputtering
    chemical erosion
    Opis:
    The main experimental results related to the problems associated with in-vessel mirrors in ITER obtained with the DSM-2 facility at the Kharkov Institute of Plasma Physics over the past few years are described and discussed. Mirrors made from various polycrystalline (Be, Al, SS, Cu, Mo, Ta, W) and single crystal (Ni, SS, Mo, W) metals, metal films (Be, Cu, Mo, Rh) on different metal substrates (V, SS, Cu, Mo), and an amorphous alloy (ZrTiCuNiBe) have been studied. In addition, the behavior of protective oxide coatings under plasma bombardment has also been analyzed.
    Źródło:
    Nukleonika; 2012, 57, 2; 157-162
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Chemical evaluation of the quality of nanostructures synthesized on the surface of indium phosphide
    Autorzy:
    Kovachov, S.S.
    Bogdanov, I.T.
    Pimenov, D.O.
    Bondarenko, V.V.
    Konovalenko, A.A.
    Skurska, M.M.
    Konovalenko, I.S.
    Suchikova, Y.O.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175768.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    semiconductors
    nanostructures
    chemical criterion
    indium phosphide
    quality indicators
    półprzewodniki
    nanostruktury
    kryterium chemiczne
    fosforek indu
    wskaźniki jakości
    Opis:
    Purpose: The article proposes a methodology for determining the chemical quality criterion of porous layers synthesized on the surface of semiconductors, based on taking into account the chemical parameters of the surface that can affect the properties of nanostructures. Design/methodology/approach: The chemical quality criterion was evaluated in terms of stoichiometry, stability of structures over time, uniformity of distribution over the surface, and the presence of an oxide phase. As an example, a calculation is demonstrated for the por-InP/InP structure synthesized on a mono-InP surface. The results of calculating the chemical quality criterion were evaluated using the Harrington scale to rank samples by quality level. Findings: A chemical criterion for the quality of porous layers synthesized on the surface of semiconductors has been developed. This criterion contains a set of indicators sufficient for a comprehensive assessment of the surface condition and is universal in nature. The studies carried out make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors and open up new perspectives in the construction of a model of self-organization of a porous structure. Research limitations/implications: The chemical quality criterion does not allow evaluating the obtained nanostructures in terms of geometric parameters. Therefore, in the future, there is a need to develop a morphological quality criterion and determine a methodology for assessing a generalized quality criterion for nanostructures synthesized on the surface of semiconductors, which may include economic, environmental, technological indicators, and the like. Practical implications: Study results are expedient from a practical point of view, since they make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors, synthesize nanostructures with predetermined properties, and create standard samples of nanomaterial composition. Originality/value: Methodology for assessing the quality of porous semiconductors by a chemical criterion has been applied for the first time in engineering science. The article will be useful to engineers, who are engaged in the synthesis of nanostructures, researchers and scientists, as well as specialists in nanometrology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 110, 1; 18--26
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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