- Tytuł:
- GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm
- Autorzy:
-
Piskorski, Ł.
Sarzała, R. P. - Powiązania:
- https://bibliotekanauki.pl/articles/199958.pdf
- Data publikacji:
- 2013
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
simulation of a diode-laser operation
QW VCSELs
mid-infrared radiation
dilute nitrides - Opis:
- In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138 -Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.
- Źródło:
-
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 3; 737-744
0239-7528 - Pojawia się w:
- Bulletin of the Polish Academy of Sciences. Technical Sciences
- Dostawca treści:
- Biblioteka Nauki
Artykuł