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Wyszukujesz frazę "Wachnicki, E." wg kryterium: Autor

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Wyświetlanie 1-15 z 26
Tytuł:
On some limit properties of the solution of the Riquier problem for the iterated Helmholtz equation in the half-plane
Autorzy:
Wachnicki, E.
Powiązania:
https://bibliotekanauki.pl/articles/746194.pdf
Data publikacji:
1987
Wydawca:
Polskie Towarzystwo Matematyczne
Opis:
The article contains no abstract
Źródło:
Commentationes Mathematicae; 1987, 27, 1
0373-8299
Pojawia się w:
Commentationes Mathematicae
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the limit properties of the solution of the Dirichlet problem for the equation \((\Delta-c^2)u(x, y) = 0\) in the half-plane
Autorzy:
Wachnicki, E.
Powiązania:
https://bibliotekanauki.pl/articles/745184.pdf
Data publikacji:
1986
Wydawca:
Polskie Towarzystwo Matematyczne
Opis:
The article contains no abstract
Źródło:
Commentationes Mathematicae; 1986, 26, 1
0373-8299
Pojawia się w:
Commentationes Mathematicae
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the geometric structure of characteristic vector fields related with nonlinear equations of the Hamilton-Jacobi type
Autorzy:
Prykarpatska, N. K.
Wachnicki, E.
Powiązania:
https://bibliotekanauki.pl/articles/255568.pdf
Data publikacji:
2007
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
Hamilton-Jacobi equations
Cartan-Monge geometric approach
Hopf-Lax type representation
Opis:
The Cartan-Monge geometric approach to the characteristics method for Hamilton-Jacobi type equations and nonlinear partial differential equations of higher orders is analyzed. The Hamiltonian structure of characteristic vector fields related with nonlinear partial differential equations of first order is analyzed, the tensor fields of special structure are constructed for defining characteristic vector fields naturally related with nonlinear partial differential equations of higher orders. The generalized characteristics method is developed in the framework of the symplectic theory within geometric Monge and Cartan pictures. The related characteristic vector fields are constructed making use of specially introduced tensor fields, carrying the symplectic structure. Based on their inherited geometric properties, the related functional-analytic Hopf-Lax type solutions to a wide class of boundary and Cauchy problems for nonlinear partial differential equations of Hamilton-Jacobi type are studied. For the non-canonical Hamilton-Jacobi equations there is stated a relationship between their solutions and a good specified functional-analytic fixed point problem, related with Hopf-Lax type solutions to specially constructed dual canonical Hamilton-Jacobi equations.
Źródło:
Opuscula Mathematica; 2007, 27, 1; 89-111
1232-9274
2300-6919
Pojawia się w:
Opuscula Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Cartan-Monge geometric approach to the generalized characteristics method and its application to the heat equation Ut - Uxx = 0
Autorzy:
Golenia, J.
Prykarpatsky, Y. A.
Wachnicki, E.
Powiązania:
https://bibliotekanauki.pl/articles/255525.pdf
Data publikacji:
2009
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
characteristics method
heat equation
Opis:
The generalized Cartan-Monge type approach to the characteristics method is discussed from the geometric point of view. Its application to the classical one-dimensional linear heat equation Ut - uxx = 0 is presented. It is shown that the corresponding exact solution of the Cauchy problem can be represented in a classical functional-analytic Gauss type form.
Źródło:
Opuscula Mathematica; 2009, 29, 1; 27-39
1232-9274
2300-6919
Pojawia się w:
Opuscula Mathematica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
Autorzy:
Witkowski, B.
Wachnicki, Ł.
Jakieła, R.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492546.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Hk
77.55.hf
68.37.Hk
61.72.Ff
Opis:
Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of thin films of high-k oxides grown by atomic layer deposition at low temperature for electronic applications
Autorzy:
Gieraltowska, S
Wachnicki, Ł
Witkowski, B S
Godlewski, M
Guziewicz, E
Powiązania:
https://bibliotekanauki.pl/articles/173591.pdf
Data publikacji:
2013
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
high-k oxides
composite layers
atomic layer deposition
transparent electronics
zinc oxide
Opis:
Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics. In this work, we present the comparison of structural, morphological and electrical properties of binary and composite layers of high-k oxides that include hafnium dioxide (HfO2), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). We deposit thin films of high-k oxides using atomic layer deposition (ALD) and low growth temperature (60–240 °C). Optimal technological growth parameters were selected for the maximum smoothness, amorphous microstructure, low leakage current, high dielectric strength of dielectric thin films, required for gate applications. High quality of the layers is confirmed by their introduction to test electronic structures, such as thin film capacitors, transparent thin film capacitors and transparent thin film transistors. In the latter structure we use semiconductor layers of zinc oxide (ZnO) and insulating layers of high-k oxide grown by the ALD technique at low temperature (no more than 100 °C).
Źródło:
Optica Applicata; 2013, 43, 1; 17-25
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method
Autorzy:
Wachnicki, Ł.
Witkowski, B.
Gierałtowska, S.
Kopalko, K.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492916.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Bc
82.47.Rs
68.55.-a
81.15.Aa
Opis:
Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 905-907
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron Photoemission Study of Ferromagnetic (Zn,Co)O Films
Autorzy:
Guziewicz, E.
Lukasiewicz, M.
Wachnicki, L.
Kopalko, K.
Dłużewski, P.
Jakiela, R.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492604.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.At
75.50.Pp
81.05.Dz
81.15.Gh
Opis:
The electronic structure of ferromagnetic (Zn,Co)O films was investigated by resonant photoemission across the Co 3p → Co 3d photoionization threshold, e.g. using photon energy between 50 eV and 66 eV. The films were grown by atomic layer deposition at temperature between 160C and 300C and they differed in distribution and content of cobalt. The maximum of the Fano resonance was observed at photon energy 63 eV, whereas the minimum at 58 eV. The difference between energy distribution curves taken at 63 eV and the one taken at 58 eV was calculated for a series of samples. It shows that the Co 3d contribution to the valence band electronic structure of ferromagnetic (Zn,Co)O films differs significantly from that of the films which show the paramagnetic response.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-040-A-042
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnO Films Grown at Low Temperature
Autorzy:
Przeździecka, E.
Krajewski, T.
Wójcik-Głodowska, A.
Yatsunenko, S.
Łusakowska, E.
Paszkowicz, W.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811975.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
81.10.-h
85.30.Fg
Opis:
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1303-1310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 26

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