Autor: Maan, J. C. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Real Time Imaging of Propagating High Field Domains in Semi-Insulating GaAs
Autorzy:: Piazza, F.
Christianen, P. C. M.
Maan, J. C.
Powiązania:: https://bibliotekanauki.pl/articles/1933946.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.Jq
78.47.+p
07.60.-j
72.20.Ht
Opis:: With a newly developed technique, we measure voltage, electric field and charge distribution of high field domains in semi-insulating GaAs under high electric bias. Based on these new quantitative data resolved in time and space, which are synchronized with the current pulses, we confront the generally accepted model which explains the domain formation with field enhanced trapping from EL2.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 865-868
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Carrier Tunneling in High Magnetic Fields
Autorzy:: Christianen, P. C. M.
Bruggink, I. E. M.
Maan, J. C.
Van Der Vleuten, W.
Powiązania:: https://bibliotekanauki.pl/articles/1933728.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.Dx
78.20.Ls
71.35.+z
Opis:: A magnetic field induced coupling is observed between the Landau levels with different quantum number of two GaAs quantum wells separated by a thin (Ga,Al)As tunnel barrier using magneto-photoluminescence-excitation spectroscopy. This coupling cannot be due to a resonance between single particle energy levels, and therefore an explanation is proposed in terms of the Coulomb interaction of magneto-excitons across the thin barrier.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 691-694
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: From Localised to Ballistic Excitons in GaAs Quantum Wells
Autorzy:: Pulizzi, F.
Christianen, P. C. M.
Maan, J. C.
Eshlaghi, S.
Reuter, D.
Wieck, A. D.
Powiązania:: https://bibliotekanauki.pl/articles/2028827.pdf
Data publikacji:: 2001-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.35.-y
71.36.+c
Opis:: The lateral motion of excitons in GaAs quantum wells is studied by means of spatially resolved photoluminescence. We show that at low temperatures (4.2 K) the exciton motion evolves from localised excitons (zero mobility) in thin quantum wells to extremely high mobilities in wide wells. We find that for the widest quantum well investigated the observed motion cannot be explained by simple exciton diffusion and must be explained by the propagation of ballistic exciton polaritons.
Źródło:: Acta Physica Polonica A; 2001, 100, 3; 397-402
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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