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Wyszukujesz frazę "Zhou, M." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Reconstruction algorithm for obtaining the bending deformation of the base of heavy-duty machine tool using inverse Finite Element Method
Autorzy:
Liu, M.
Zhang, X.
Song, H.
Wang, J.
Zhou, S.
Powiązania:
https://bibliotekanauki.pl/articles/221566.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
inverse Finite Element Method
bending deformation
heavy-duty machine tool
reconstruction algorithm
statically indeterminate structure
Opis:
The field of mechanical manufacturing is becoming more and more demanding on machining accuracy. It is essential to monitor and compensate the deformation of structural parts of a heavy-duty machine tool. The deformation of the base of a heavy-duty machine tool is an important factor that affects machining accuracy. The base is statically indeterminate and complex in load. It is difficult to reconstruct deformation by traditional methods. A reconstruction algorithm for determining bending deformation of the base of a heavy-duty machine tool using inverse Finite Element Method (iFEM) is presented. The base is equivalent to a multi-span beam which is divided into beam elements with support points as nodes. The deflection polynomial order of each element is analysed. According to the boundary conditions, the deformation compatibility conditions and the strain data measured by Fiber Bragg Grating (FBG), the deflection polynomial coefficients of a beam element are determined. Using the coordinate transformation, the deflection equation of the base is obtained. Both numerical verification and experiment were carried out. The deflection obtained by the reconstruction algorithm using iFEM and the actual deflection measured by laser displacement sensors were compared. The accuracy of the reconstruction algorithm is verified.
Źródło:
Metrology and Measurement Systems; 2018, 25, 4; 727-741
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
Autorzy:
Prucnal, S.
Turek, M.
Gao, K.
Zhou, S.
Pyszniak, K.
Droździel, A.
Żuk, J.
Skorupa, W.
Powiązania:
https://bibliotekanauki.pl/articles/1400484.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.Hc
81.05.Ea
81.07.Ta
81.15.Lm
Opis:
Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 935-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
Autorzy:
Prucnal, S.
Jiao, F.
Reichel, D.
Zhao, K.
Cornelius, S.
Turek, M.
Pyszniak, K.
Drozdziel, A.
Skorupa, W.
Helm, M.
Zhou, S.
Powiązania:
https://bibliotekanauki.pl/articles/1199248.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.jn
61.72.Cc
78.55.Hx
Opis:
Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1404-1407
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
Autorzy:
Lonsky, M.
Teschabai-Oglu, J.
Pierz, K.
Sievers, S.
Schumacher, H.
Yuan, Y.
Böttger, R.
Zhou, S.
Müller, J.
Powiązania:
https://bibliotekanauki.pl/articles/1397018.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
73.50.Td
73.50.-h
73.61.-r
64.60.ah
61.72.-y
Opis:
We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 520-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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