- Tytuł:
- An impact of frequency on capacitances of partially-depleted SOI MOSFETs
- Autorzy:
-
Tomaszewski, D.
Łukasik, L.
Zaręba, A.
Jakubowski, A. - Powiązania:
- https://bibliotekanauki.pl/articles/309325.pdf
- Data publikacji:
- 2000
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SOI MOSFET
small-signal models
non-quasi-static analysis
admittances - Opis:
- A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2000, 3-4; 67-71
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł