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    Wyświetlanie 1-6 z 6
    Tytuł:
    Competition of Radiation Processes in 6H-SiC Observed by Luminescence
    Autorzy:
    Wysmołek, A.
    Mroziński, P.
    Dwiliński, R.
    Vlaskina, S.
    Kamińska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873137.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.60.Kn
    Opis:
    We report on the results of photoluminescence and thermoluminescence measurements of various 6H-SiC crystals. At low temperature in all n-type samples two bands with maxima at 2.7 eV (blue) and 1.8 eV (orange) were detected. In the p-type material only blue band was observed. The measurements performed at a broad range of temperatures showed totally different behaviour of photoluminescence intensity of both bands. The presented results could be explained in the model assuming well established donor-acceptor pair recombination for the blue band emission and the conduction band - deep defect transition for the orange band. The proposed model was confirmed by thermoluminescence measurements of the orange band which showed peaks at 30 K, 80 K, 100 K, 150 K attributed to ionization of subsequent shallow donor levels.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 437-440
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
    Autorzy:
    Wysmołek, A.
    Łusakowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932094.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    72.20.Ht
    Opis:
    Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 261-264
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC
    Autorzy:
    Wysmołek, A.
    Baranowski, J. M.
    Kamińska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934050.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.-m
    78.20.-e
    78.60.Kn
    Opis:
    We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 957-960
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light Induced Modification of Graphene Oxide Layers on GaN Basis
    Autorzy:
    Łopion, A.
    Stobiński, L.
    Pakuła, K.
    Bożek, R.
    Kaźmierczak, P.
    Wysmołek, A.
    Stępniewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1185429.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.-f
    78.55.-m
    78.30.-j
    07.05.Kf
    Opis:
    Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1169-1171
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Strong Photoluminescence Fluctuations in Laser-Thinned Few-Layer WS₂
    Autorzy:
    Bala, Ł.
    Łacińska, E.
    Nogajewski, K.
    Molas, M.
    Wysmołek, A.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398573.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.-f
    71.35.-y
    78.55.-m
    78.30.-j
    Opis:
    We present results of μ-Raman and μ-photoluminescence study of few-layer WS₂ flakes that have been locally thinned down by a focused laser beam. The Raman spectroscopy measurements prove that the investigated flake was locally thinned down to a monolayer. Interestingly, μ-photoluminescence experiments allowed us to observe huge intensity fluctuations at the boundary of laser-thinned region. Similar effects were found at the edges of a WS₂ bilayer flake, which has not been subjected to laser-thinning. The origin of the observed time evolution of the photoluminescence response is discussed in terms of potential fluctuations resulting from light-induced changes of the charge state of defects.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1176-1178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
    Autorzy:
    Borysiuk, J.
    Wysmołek, A.
    Bożek, R.
    Strupiński, W.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811916.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Lp
    78.55.-m
    61.72.Nn
    68.65.Fg
    61.72.up
    Opis:
    Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1067-1072
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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