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    Wyświetlanie 1-14 z 14
    Tytuł:
    In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper
    Autorzy:
    Binder, J.
    Stępniewski, R.
    Strupiński, W.
    Wysmołek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033795.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Pq
    78.67.Wj
    73.30.+y
    Opis:
    We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 360-363
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Time Evolution of the Microluminescence Energy οf GaN/AlGaN Quantum Dots
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791354.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Time evolution of the microphotoluminescence from low-density GaN/$Al_{x}Ga_{1-x}N$ quantum dots grown by metal organic chemical vapor deposition using in situ etching of AlGaN is presented. The observed effect is related to the energy changes that begin immediately after sample illumination with the exciting laser light and saturate after some time. Typically, the luminescence energy decreases and the change is exponential with characteristic times in a range between several dozen and several hundred seconds. However, sometimes we observed the energy increase with characteristic times in a range between several and a few hundred seconds. The obtained results are discussed in terms of the metastable change of the electric field, induced by spontaneous polarization present in GaN/AlGaN structure (in the growth direction), and strain- or defect-induced changes of the electric field in the vicinity of the dot.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 933-935
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Single GaN/AlGaN Quantum Dot Spectroscopy
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047382.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The detailed analysis of the emission from these structures enables the observation of pairs of lines separated by the energy up to 3 meV. They behave in a different way under different excitation power that suggests that this doublet structure can be associated with the exciton and trion (or biexciton recombination). It is observed that for different quantum dots the energy of the charged exciton complex emission could be higher or lower than the neutral exciton one. It is discussed in terms of a competition between attractive e-h and repulsive e-e (h-h) Coulomb interaction that occurs because of the existence of the built-in electric field that separates electrons and holes in the dot.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 233-236
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temporal Evolution of Multi-Carrier Complexes in Single GaN/AlGaN Quantum Dots
    Autorzy:
    Surowiecka, K.
    Wysmołek, A.
    Stępniewski, R.
    Bożek, R.
    Pakuła, K.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044542.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.67.Hc
    Opis:
    Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 879-884
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates
    Autorzy:
    Grodecki, K.
    Drabińska, A.
    Bożek, R.
    Wysmołek, A.
    Korona, K.
    Strupiński, W.
    Borysiuk, J.
    Stępniewski, R.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791292.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Tr
    78.40.Ri
    78.30.Na
    63.20.dd
    63.20.kd
    Opis:
    Optical absorption and Raman scattering studies of few-layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 835-837
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Graphene Based Flow Sensors
    Autorzy:
    Kaźmierczak, P.
    Binder, J.
    Boryczko, K.
    Ciuk, T.
    Strupiński, W.
    Stępniewski, R.
    Wysmołek, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195452.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Pq
    72.80.Vp
    73.30.+y
    Opis:
    We report on attempts to produce a graphene based liquid flow sensor. Our results indicate that modifications of the electric double layer, formed in the vicinity of the graphene surface, dominate over mechanisms responsible for liquid flow-induced voltage/current generation. Several graphene structures were tested in different measurement configurations, aimed to maximize the generated signal amplitude and its stability. Some realizations of working devices in water as well as in aqueous solutions of NaCl or HCl are presented.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1209-1211
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magneto-Luminescence Study of Silicon-Vacancy in 6HSi
    Autorzy:
    Wysmołek, A.
    Wardak, K.
    Stępniewski, R.
    Baranowski, J.
    Potemski, M.
    Tymicki, E.
    Grasza, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047066.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    71.55.-i
    71.55.Ht
    Opis:
    The magneto-spectroscopy studies of luminescence related to silicon-vacancy, in high quality 6H-SiC crystals grown by the seeded physical vapor transport method, are presented. The superior optical quality of these crystals allowed us to resolve a doublet structure of the 1.398 eV emission line (V$\text{}_{2}$ line), commonly assigned to the transitions involving two singlet states of the silicon-vacancy. Experiments performed in magnetic fields up to 20 T showed that each doublet constituent of the V$\text{}_{2}$ line splits into four components for the magnetic field parallel to the c-axis of the 6H-SiC crystals. This result could be hardly explained in terms of a singlet to singlet transition. The analysis of the angle-resolved luminescence experiments in high magnetic fields serves us to discuss the symmetry of the defect states responsible for the V$\text{}_{2}$-line in silicon carbide.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 437-442
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Piezospectroscopy of Phonons in Bulk 6H-SiC
    Autorzy:
    Grodecki, K.
    Wysmołek, A.
    Stępniewski, R.
    Baranowski, J.
    Hofman, W.
    Tymicki, E.
    Grasza, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791360.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.50.-p
    42.65.Dr
    63.20.-e
    78.30.-j
    Opis:
    Raman piezospectroscopy of high quality 6H-SiC crystals is presented. The crystals used in experiments were grown by the seeded physical vapor transport method. Uniaxial stress up to 0.9 MPa, obtained using a spring apparatus, was applied along [11-20] and [10-10] directions. It was found that the application of uniaxial stress led to different energy shifts of the observed phonon excitations in the investigated 6H-SiC crystals. The obtained pressure coefficients vary in the range 0.98-5.5 $cm^{-1}$ $GPa^{-1}$ for different transverse optical phonon modes. For longitudinal optic phonon modes pressure coefficients in the range 1.6-3.6 $cm^{-1}$ $GPa^{-1}$ were found. The data obtained could be useful in evaluation of local strain fields in SiC based structures and devices including epitaxial graphene.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 947-949
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
    Autorzy:
    Pakula, K.
    Baranowski, J. M.
    Stępniewski, R.
    Wysmołek, A.
    Grzegory, I.
    Jun, J.
    Porowski, S.
    Sawicki, M.
    Starowieyski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933937.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Fd
    78.55.Cr
    Opis:
    The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 861-864
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Stępniewski, R.
    Pakuła, K.
    Kossacki, P.
    Golnik, A.
    Baranowski, J. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038084.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    75.75.+a
    68.65.Hb
    Opis:
    We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 517-521
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and optical properties of boron nitride grown by MOVPE
    Autorzy:
    Dąbrowska, A.
    Pakuła, K.
    Bożek, R.
    Rousset, J.
    Ziółkowska, D.
    Gołasa, K.
    Korona, K.
    Wysmołek, A.
    Stępniewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160531.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Gh
    78.30.Fs
    78.20.-e
    Opis:
    Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Coupling of LO Phonons to Excitons in GaN
    Autorzy:
    Wysmołek, A.
    Łomiak, P.
    Baranowski, J. M.
    Pakuła, K.
    Stępniewski, R.
    Korona, K. P.
    Grzegory, I.
    Boćkowski, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952430.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    63.20.Mt
    71.55.Eq
    Opis:
    The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 981-984
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
    Autorzy:
    Chwalisz, B.
    Wysmołek, A.
    Bożek, R.
    Korona, K. P.
    Stępniewski, R.
    Knap, W.
    Pakuła, K.
    Baranowski, J. M.
    Grandjean, N.
    Massies, J.
    Prystawko, P.
    Grzegory, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036024.pdf
    Data publikacji:
    2003-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.20.-r
    73.21.-b
    74.40.+k
    Opis:
    Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 6; 573-578
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Control of Photon Polarization in GaAs/AlAs Single Quantum Dot Emission
    Autorzy:
    Suffczyński, J.
    Trajnerowicz, A.
    Kazimierczuk, T.
    Piętka, B.
    Kowalik, K.
    Kossacki, P.
    Golnik, A.
    Nawrocki, M.
    Gaj, J. A.
    Wysmołek, A.
    Stępniewski, R.
    Potemski, M.
    Thierry-Mieg, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047725.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    78.66.Fd
    78.67.Hc
    78.47.+p
    Opis:
    We study polarization resolved correlation between photons emitted in cascaded biexciton-exciton recombination from a single quantum dot formed in type II GaAs/AlAs bilayer. Magnetic field induced transition from anisotropy controlled to the Zeeman controlled emission was demonstrated by a circular polarization correlation between the emitted photons. A simple model describing the effect allowed us to determine the anisotropic exchange splitting of the excitonic state. This method of the anisotropic exchange splitting determination can be useful in the case when other methods are not sensitive enough.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 461-466
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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