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Wyświetlanie 1-15 z 20
Tytuł:
Shallow Donors and Acceptors in GaN; Bound Excitons and Pair Spectra
Autorzy:
Stępniewski, R.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1946873.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
71.55.Eq
71.38.+i
Opis:
Recent photoluminescence results obtained for homoepitaxial GaN layers are presented. Dominant photoluminescence structures observed for these layers can be assigned to excitons bound to neutral impurities. Different methods such as temperature dependent evolution, high magnetic field and time resolved spectroscopy have been used to study the exciton line properties. For the p-type samples sharp lines are observed, assigned to the donor-acceptor recombination for differently distant pairs. The analysis of the optical transitions related to donors and acceptors is in reasonable agreement with the effective mass approximation. Electron phonon interaction was found to strongly affect the optical properties of GaN. The dominant intrinsic defect has been identified as a donor located at a nitrogen site.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 681-690
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
In Situ Raman Spectroscopy of Solution-Gated Graphene on Copper
Autorzy:
Binder, J.
Stępniewski, R.
Strupiński, W.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033795.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Pq
78.67.Wj
73.30.+y
Opis:
We present a solution-gated in situ Raman spectroscopy approach, which enables the electrical characterization of graphene on a copper substrate without the need of a transfer process. The application of a voltage across the solution resulted in a shift of the Raman G-band without a significant shift of the 2D band. This observation allowed for the separation of the effects of strain and doping. Based on the G and 2D band shifts we show that we can manipulate the n-type carrier concentration of graphene directly on the copper substrate in a range from about 8× 10¹² cm¯² to about 1.5× 10¹³ cm¯².
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 360-363
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Resolved Magnetophotoluminescence of Biased GaAs/AlGaAs Double Quantum Well Structure
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Potemski, M.
Henini, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811991.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Ji
78.67.De
Opis:
Time resolved photoluminescence of double quantum well structure was investigated versus electric and magnetic fields applied across the sample. The emission due to direct excitons (electron and hole are localized within the same quantum well) decays fast at the nanosecond timescale, whereas the recombination kinetics of indirect excitons is much slower and spreads over microseconds. The time evolution of indirect exciton emission is shown to be altered by application of either electric or magnetic field. This reflects the non-trivial effects of exciton localization which leads to the non-exponential decays of the indirect exciton emission.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1369-1374
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carriers Diffusion in GaAs/AlAs Type II Quantum Well
Autorzy:
Lesiak, A.
Chwalisz, B.
Wysmołek, A.
Potemski, M.
Stępniewski, R.
Thierry-Mieg, V.
Powiązania:
https://bibliotekanauki.pl/articles/2044497.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
Opis:
The micro-photoluminescence of GaAs/AlAs type II double quantum well structure is presented. The specific band alignment of the investigated system allows obtaining high concentration of long lived carriers. This enables us to study diffusion of carriers and/or indirect excitons. It was found that the carrier flow does not follow the classical diffusion equation and is driven by the potential modification due to the presence of photo created carriers.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 755-760
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Induced Modification of Graphene Oxide Layers on GaN Basis
Autorzy:
Łopion, A.
Stobiński, L.
Pakuła, K.
Bożek, R.
Kaźmierczak, P.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1185429.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.22.-f
78.55.-m
78.30.-j
07.05.Kf
Opis:
Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1169-1171
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Built-In Electric Field in High Quality GaN/AlGaN Quantum Wells
Autorzy:
Zieleniewski, K.
Pakuła, K.
Bożek, R.
Masztalerz, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/2048083.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.De
77.55.hn
81.15.Gh
Opis:
We report studies on electric field built in GaN/Al$\text{}_{0.09}$Ga$\text{}_{0.91}$N structure of nominally 6 nm wide quantum well. The sample was grown in horizontal metal-organic chemical vapor deposition reactor using innovative technology that decreases the density of screw dislocations. Firstly, using visible and mid infra-red interference pattern along the sample, the layer thickness and consequently the quantum well width was determined to vary linearly with the position. Secondly, photoluminescence spectra was taken at different positions. Correlation of those two measurements allows us to determine the built-in electric field to be 0.66 MV/cm, which is considerably larger than previously reported for similar structures.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 657-659
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure
Autorzy:
Wysmołek, A.
Chwalisz, B.
Potemski, M.
Stępniewski, R.
Babiński, A.
Raymond, S.
Thierry-Mieg, V.
Powiązania:
https://bibliotekanauki.pl/articles/2038338.pdf
Data publikacji:
2004-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.De
78.20.Ls
71.35.Lk
73.20.-r
78.47.+p
Opis:
The nature of sharp emission lines which are present in macro-luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-lumines- cence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a fewμm in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron-hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells.
Źródło:
Acta Physica Polonica A; 2004, 106, 3; 367-381
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Time Evolution of the Microluminescence Energy οf GaN/AlGaN Quantum Dots
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791354.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Time evolution of the microphotoluminescence from low-density GaN/$Al_{x}Ga_{1-x}N$ quantum dots grown by metal organic chemical vapor deposition using in situ etching of AlGaN is presented. The observed effect is related to the energy changes that begin immediately after sample illumination with the exciting laser light and saturate after some time. Typically, the luminescence energy decreases and the change is exponential with characteristic times in a range between several dozen and several hundred seconds. However, sometimes we observed the energy increase with characteristic times in a range between several and a few hundred seconds. The obtained results are discussed in terms of the metastable change of the electric field, induced by spontaneous polarization present in GaN/AlGaN structure (in the growth direction), and strain- or defect-induced changes of the electric field in the vicinity of the dot.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 933-935
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single GaN/AlGaN Quantum Dot Spectroscopy
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2047382.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The detailed analysis of the emission from these structures enables the observation of pairs of lines separated by the energy up to 3 meV. They behave in a different way under different excitation power that suggests that this doublet structure can be associated with the exciton and trion (or biexciton recombination). It is observed that for different quantum dots the energy of the charged exciton complex emission could be higher or lower than the neutral exciton one. It is discussed in terms of a competition between attractive e-h and repulsive e-e (h-h) Coulomb interaction that occurs because of the existence of the built-in electric field that separates electrons and holes in the dot.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 233-236
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temporal Evolution of Multi-Carrier Complexes in Single GaN/AlGaN Quantum Dots
Autorzy:
Surowiecka, K.
Wysmołek, A.
Stępniewski, R.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2044542.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.67.Hc
Opis:
Microphotoluminescence of low-density GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N quantum dots grown by metal-organic vapor phase epitaxy using in situ etching of AlGaN is presented. The narrow lines in the microphotoluminescence spectra due to the single quantum dots are observed. Both energy and intensity of these lines show temporal fluctuations. Statistical analysis based on the correlation matrix allowed us to identify objects, which are affected by photo-induced electric field fluctuations. Relations between emission lines participating in the spectrum are discussed.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 879-884
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:
We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates
Autorzy:
Grodecki, K.
Drabińska, A.
Bożek, R.
Wysmołek, A.
Korona, K.
Strupiński, W.
Borysiuk, J.
Stępniewski, R.
Baranowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791292.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Tr
78.40.Ri
78.30.Na
63.20.dd
63.20.kd
Opis:
Optical absorption and Raman scattering studies of few-layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 835-837
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Graphene Based Flow Sensors
Autorzy:
Kaźmierczak, P.
Binder, J.
Boryczko, K.
Ciuk, T.
Strupiński, W.
Stępniewski, R.
Wysmołek, A.
Powiązania:
https://bibliotekanauki.pl/articles/1195452.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Pq
72.80.Vp
73.30.+y
Opis:
We report on attempts to produce a graphene based liquid flow sensor. Our results indicate that modifications of the electric double layer, formed in the vicinity of the graphene surface, dominate over mechanisms responsible for liquid flow-induced voltage/current generation. Several graphene structures were tested in different measurement configurations, aimed to maximize the generated signal amplitude and its stability. Some realizations of working devices in water as well as in aqueous solutions of NaCl or HCl are presented.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1209-1211
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto-Luminescence Study of Silicon-Vacancy in 6HSi
Autorzy:
Wysmołek, A.
Wardak, K.
Stępniewski, R.
Baranowski, J.
Potemski, M.
Tymicki, E.
Grasza, K.
Powiązania:
https://bibliotekanauki.pl/articles/2047066.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
71.55.-i
71.55.Ht
Opis:
The magneto-spectroscopy studies of luminescence related to silicon-vacancy, in high quality 6H-SiC crystals grown by the seeded physical vapor transport method, are presented. The superior optical quality of these crystals allowed us to resolve a doublet structure of the 1.398 eV emission line (V$\text{}_{2}$ line), commonly assigned to the transitions involving two singlet states of the silicon-vacancy. Experiments performed in magnetic fields up to 20 T showed that each doublet constituent of the V$\text{}_{2}$ line splits into four components for the magnetic field parallel to the c-axis of the 6H-SiC crystals. This result could be hardly explained in terms of a singlet to singlet transition. The analysis of the angle-resolved luminescence experiments in high magnetic fields serves us to discuss the symmetry of the defect states responsible for the V$\text{}_{2}$-line in silicon carbide.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 437-442
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Piezospectroscopy of Phonons in Bulk 6H-SiC
Autorzy:
Grodecki, K.
Wysmołek, A.
Stępniewski, R.
Baranowski, J.
Hofman, W.
Tymicki, E.
Grasza, K.
Powiązania:
https://bibliotekanauki.pl/articles/1791360.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.50.-p
42.65.Dr
63.20.-e
78.30.-j
Opis:
Raman piezospectroscopy of high quality 6H-SiC crystals is presented. The crystals used in experiments were grown by the seeded physical vapor transport method. Uniaxial stress up to 0.9 MPa, obtained using a spring apparatus, was applied along [11-20] and [10-10] directions. It was found that the application of uniaxial stress led to different energy shifts of the observed phonon excitations in the investigated 6H-SiC crystals. The obtained pressure coefficients vary in the range 0.98-5.5 $cm^{-1}$ $GPa^{-1}$ for different transverse optical phonon modes. For longitudinal optic phonon modes pressure coefficients in the range 1.6-3.6 $cm^{-1}$ $GPa^{-1}$ were found. The data obtained could be useful in evaluation of local strain fields in SiC based structures and devices including epitaxial graphene.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 947-949
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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