Autor: Božek, P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Light Induced Modification of Graphene Oxide Layers on GaN Basis
Autorzy:: Łopion, A.
Stobiński, L.
Pakuła, K.
Bożek, R.
Kaźmierczak, P.
Wysmołek, A.
Stępniewski, R.
Powiązania:: https://bibliotekanauki.pl/articles/1185429.pdf
Data publikacji:: 2016-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.22.-f
78.55.-m
78.30.-j
07.05.Kf
Opis:: Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.
Źródło:: Acta Physica Polonica A; 2016, 130, 5; 1169-1171
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
Autorzy:: Dwiliński, R.
Palczewska, M.
Kaczor, P.
Korona, K.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1920972.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
78.50.Ge
76.30.Mi
Opis:: The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 613-616
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Optical and Electrical Measurements of Low-Temperature InAlAs
Autorzy:: Korona, K. P.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Baranowski, J. M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1923833.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
73.60.Br
78.55.Cr
Opis:: Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 825-828
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
Autorzy:: Chwalisz, B.
Wysmołek, A.
Bożek, R.
Stępniewski, R.
Pakuła, K.
Kossacki, P.
Golnik, A.
Baranowski, J. M.
Powiązania:: https://bibliotekanauki.pl/articles/2038084.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
78.66.Fd
78.67.Hc
75.75.+a
68.65.Hb
Opis:: We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25 μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20-3.55 eV. It is shown that the magnetic fields up to 7 T do not influence significantly the electronic states of the dots.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 517-521
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
Autorzy:: Chwalisz, B.
Wysmołek, A.
Bożek, R.
Korona, K. P.
Stępniewski, R.
Knap, W.
Pakuła, K.
Baranowski, J. M.
Grandjean, N.
Massies, J.
Prystawko, P.
Grzegory, I.
Powiązania:: https://bibliotekanauki.pl/articles/2036024.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
73.20.-r
73.21.-b
74.40.+k
Opis:: Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 573-578
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja