Autor: Yu, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures
Autorzy:: Wrotek, S.
Morawski, A.
Tkaczyk, Z.
Mąkosa, A.
Wosiński, T.
Dybko, K.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Pécz, B.
Grasza, K.
Szczerbakow, A.
Wróbel, J.
Powiązania:: https://bibliotekanauki.pl/articles/2038135.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Le
75.30.Et
75.70.Cn
Opis:: Current-voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10 x 10 μm$\text{}^{2}$ to 100 x 100 μm$\text{}^{2}$) ferromagnetic EuS-PbS-EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 615-620
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Vertical Electron Transport through PbS-EuS Structures
Autorzy:: Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Magnetic and Structural Properties of EuS-PbS Multilayers Grown on n-PbS (100) Substrates
Autorzy:: Chernyshova, M.
Łusakowska, E.
Domukhovski, V.
Grasza, K.
Szczerbakow, A.
Wrotek, S.
Kowalczyk, L.
Story, T.
Smits, C. J. P.
Swagten, H. J. M.
De Jonge, W. J. M.
Palosz, W.
Sipatov, A. Yu.
Volobuev, V. V.
Powiązania:: https://bibliotekanauki.pl/articles/2035589.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
Opis:: Magnetic properties of semiconductor EuS(t)-PbS(d)-EuS(t) ferromagnetic trilayers (t=30÷300Å and d=7.5÷70Å) grown on n-type monocrystalline PbS (100) substrate were studied by SQUID magnetometry and ferromagnetic resonance technique yielding, in particular, the dependence of the ferromagnetic Curie temperature on the thickness of the EuS layer. Structural parameters of layers were examined by X-ray powder diffraction analysis. A high structural quality of the substrate and the multilayer was verified by the measurements of the X-ray rocking curve width indicating the values of the order of 100 arcsec and by atomic force microscopy revealing the presence on the cleft PbS surface regions practically flat in the atomic scale over the area of 1×0.1μm$\text{}^{2}$.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 609-615
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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