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    Wyświetlanie 1-11 z 11
    Tytuł:
    ZnO dla fotowoltaiki
    ZnO for Photovoltaics
    Autorzy:
    Godlewski, M.
    Łuka, G.
    Pietruszka, R.
    Wachnicki, Ł.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/159146.pdf
    Data publikacji:
    2014
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
    Tematy:
    fotowoltaika
    tlenek cynku
    photovoltaics
    zinc oxide
    Opis:
    Mimo znaczącej redukcji kosztów paneli fotowoltaicznych (PV), cena energii wytwarzanej przez baterie słoneczne ciągle jest za wysoka. Możliwe są dwie strategie rozwiązania tej sytuacji – (a) podniesienie wydajności konwersji światła w komórkach fotowoltaicznych lub/i (b) obniżenie kosztów paneli PV poprzez zastosowanie tańszych materiałów lub technologii. W referacie omówione są prace mające na celu: (a) zastąpienie zbyt drogiego ITO warstwami ZnO o przewodnictwie metalicznym, (b) uproszczenie konstrukcji komórek PV oraz (c) znalezienie alternatywnych materiałów.
    Despite of a large reductions of costs energy produced by solar panels is still too expensive. There are two approaches to change this situation: by (a) increase of device output and/or (b) reduction of device costs by use of cheaper alternative materials. In this article we discuss the latter approach – (a) replacement of ITO by ZnO with metallic conductivity, (b) change of device architecture, and (c) use of alternative materials.
    Źródło:
    Prace Instytutu Elektrotechniki; 2014, 264; 5-13
    0032-6216
    Pojawia się w:
    Prace Instytutu Elektrotechniki
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Synthesis Pressure on Properties of Eu-Doped ZnO Nanopowders Prepared by Microwave Hydrothermal Method
    Autorzy:
    Rosowska, J.
    Kaszewski, J.
    Witkowski, B.
    Wachnicki, Ł.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1185714.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    81.07.Wx
    81.20.Ka
    78.60.Hk
    Opis:
    In the current research, europium doped ZnO nanopowders prepared by a microwave hydrothermal method are investigated. The effects of synthesis pressure on the morphologies, crystal structures, and optical properties of Eu-doped ZnO were analyzed by scanning electron microscopy, X-ray diffraction, cathodo- and photoluminescence. From our investigations it can be concluded that the synthesis pressure strongly influences the surface morphology. With the increase of the synthesis pressure from 2 MPa to 10 MPa significant changes can be observed. An increase of the mean crystallites sizes and change of the intensity ratio between the near band edge and defect related deep level emission band of ZnO were observed.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1205-1208
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Characterization of ZnO Nanorods Grown by the Ultra-Fast and Low Temperature Hydrothermal Process
    Autorzy:
    Witkowski, B.
    Ivanov, V.
    Wachnicki, Ł.
    Gierałtowska, S.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1185890.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.-n
    61.46.+w
    81.10.Dn
    77.84.Bw
    Opis:
    The results of photoluminescence investigations of zinc oxide nanorods are reported. These nanorods grown on undoped silicon substrates were obtained by low temperature and ultra-fast version of a microwave-assisted hydrothermal method. The photoluminescence investigations show very high quality of the obtained material. From photoluminescence studies we conclude the lack of carrier localization effects. The photoluminescence is dominated by band gap edge emission of bound excitonic (donor bound excitons) origin. Thus, the photoluminescence quenching observed at increased temperatures is associated with thermal ionization of shallow donors. From photoluminescence analysis (changes of photoluminescence line width) a strength of exciton-acoustic phonon coupling is evaluated.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1199-1201
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
    Autorzy:
    Witkowski, B.
    Wachnicki, Ł.
    Jakieła, R.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492546.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Hk
    77.55.hf
    68.37.Hk
    61.72.Ff
    Opis:
    Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Structural Characterization of Zinc Oxide Nanostructures Obtained by Atomic Layer Deposition Method
    Autorzy:
    Wachnicki, Ł.
    Witkowski, B.
    Gierałtowska, S.
    Kopalko, K.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492916.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Bc
    82.47.Rs
    68.55.-a
    81.15.Aa
    Opis:
    Zinc oxide is a II-VI semiconductor material which is gaining increasing interest in various fields such as biology, medicine or electronics. This semiconductor reveals very special physical and chemical properties, which imply many applications including a transparent electrode in solar cells or LED diodes. Among many applications, ZnO is also a prospective material for sensor technology, where developed surface morphology is very advantageous. In this work we present ZnO nanowires growth using atomic layer deposition method. ZnO nanowires were obtained using controlled physical properties. As a substrate we used gallium arsenide with gold-gallium eutectic droplets prepared on the surface at high temperature. To obtain the eutectic solution there was put a gold thin film on GaAs through the sputtering and then we annealed the sample in a nitrogen gas flow. The so-prepared substrate was applied for growth of ZnO nanowires. We used deionized water and zinc chloride as oxygen and zinc precursors, respectively. The eutectic mixture serves as a catalyst for the ZnO nanowires growth. Au-Ga droplets flow on the front of ZnO nanowires. Scanning electron microscopy images show ZnO nanorods in a form of crystallites of up to 1 μm length and a 100 nm diameter. It is the first demonstration of the ZnO nanowires growth by atomic layer deposition using the vapour-liquid-solid approach.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 905-907
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of n-ZnO/p-GaN Heterojunction for Optoelectronic Applications
    Autorzy:
    Wachnicki, L.
    Gieraltowska, S.
    Witkowski, B.
    Figge, S.
    Hommel, D.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399138.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Kk
    61.05.cp
    81.05.Dz
    Opis:
    An important feature of zinc oxide and gallium nitride materials are their similar physical properties. This allows to use them as a p-n junction materials for applications in optoelectronics. In earlier work we presented use of ZnO as a transparent contact to GaN, which may improve external efficiency of LED devices. In this work we discuss properties of a n-ZnO/p-GaN heterostructure and discuss its optimization. The heterostructure is investigated by us for possible applications, e.g. in a new generation of UV LEDs or UV light detectors.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 869-872
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    (Zn,Cu)O Films by Atomic Layer Deposition - Structural, Optical and Electric Properties
    Autorzy:
    Łukasiewicz, M.
    Witkowski, B.
    Wachnicki, Ł.
    Kopalko, K.
    Gierałtowska, S.
    Wittlin, A.
    Jaworski, M.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492571.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    68.55.Nq
    78.66.Hf
    81.15.Kk
    Opis:
    ZnCuO thin films have been deposited on silicon, glass and quartz substrates by atomic layer deposition method, using reactive organic precursors of zinc and copper. As zinc and copper precursors we applied diethylzinc and copper(II) acetyloacetonate. Structural, electrical and optical properties of the obtained ZnCuO layers are discussed based on the results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, the Hall effect and photoluminescence investigations.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-034-A-036
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
    Autorzy:
    Ratajczak, R.
    Stonert, A.
    Guziewicz, E.
    Gierałtowska, S.
    Krajewski, T.
    Luka, G.
    Wachnicki, L.
    Witkowski, B.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400467.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    81.05.Dz
    81.15.Hi
    68.55.ag
    82.80.Yc
    61.85.+p
    Opis:
    The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 899-903
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    ZnO by ALD - Advantages of the Material Grown at Low Temperature
    Autorzy:
    Guziewicz, E.
    Godlewski, M.
    Krajewski, T.
    Wachnicki, Ł.
    Łuka, G.
    Paszkowicz, W.
    Domagała, J.
    Przeździecka, E.
    Łusakowska, E.
    Witkowski, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791286.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    78.66.Hf
    72.80.Ey
    Opis:
    The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as $10^{16} cm^{-3}$ and high mobility ($10-50 cm^{2}$/(Vs)), which satisfies requirements for a material used in three-dimensional memories.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 814-817
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
    Autorzy:
    Krajewski, T.
    Luka, G.
    Smertenko, P.
    Zakrzewski, A.
    Dybko, K.
    Jakiela, R.
    Wachnicki, L.
    Gieraltowska, S.
    Witkowski, B.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492501.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    73.50.-h
    73.50.Bk
    73.61.Ga
    81.15.-z
    81.15.Gh
    Opis:
    The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
    Autorzy:
    Wachnicki, Ł.
    Dużyńska, A.
    Domagala, J.
    Witkowski, B.
    Krajewski, T.
    Przeździecka, E.
    Guziewicz, M.
    Wierzbicka, A.
    Kopalko, K.
    Figge, S.
    Hommel, D.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492723.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Aa
    61.05.cp
    81.05.Dz
    Opis:
    Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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