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    Wyświetlanie 1-8 z 8
    Tytuł:
    Changes of tribological properties of Inconel 600 after ion implantation process
    Autorzy:
    Barlak, M.
    Chmielewski, M.
    Werner, Z.
    Pietrzak, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/201897.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    foil bearings
    ion implantation
    Inconel 600
    friction coefficient
    łożyska z folii
    implantacja jonów
    współczynnik tarcia
    Opis:
    Commercial Inconel 600 nickel-chromium alloy was implanted with nitrogen, titanium, chromium, copper with tin (as bronze components) and yttrium ions to doses ranging from 1.6e17 to 3.5e17 cm−2. The aim of this research was to investigate the properties of the modified alloy in the context of its application in foil bearings. The virgin and the treated samples were tribologically tested and examined by Scanning Electron Microscopy, Glow Discharge Mass Spectrometry and Energy Dispersive Spectroscopy. The technological studies were preceded by modelling of concentration values of the introduced elements. The results obtained with the use of ion implantation are discussed. There are two advantages which should be highlighted: good agreement in modelling and experimental results of depth profiles of implanted ions, wear resistance improvement of Inconel 600 surface by implantation of copper and tin ions. The tribological tests indicate that abrasion and corrosion are the predominant mechanisms of surface wear.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 4; 827-833
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ion implantation followed by laser/pulsed plasma/ion beam annealing : a new approach to fabrication of superconducting MgB2 thin films
    Autorzy:
    Piekoszewski, J.
    Werner, Z.
    Barlak, M.
    Kolitsch, A.
    Szymczyk, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/146817.pdf
    Data publikacji:
    2008
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    MgB2
    superconducting films
    pulsed plasma annealing
    Opis:
    The paper presents a new approach to formation of superconducting MgB2 thin films: ion implantation followed by annealing in an unconventional second step treatment using pulsed laser, plasma, or ion beams. Merits and drawbacks of individual approaches are discussed.
    Źródło:
    Nukleonika; 2008, 53, 1; 7-10
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
    Autorzy:
    Ratajczak, R.
    Werner, Z.
    Barlak, M.
    Pochrybniak, C.
    Stonert, A.
    Zhao, Q.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402209.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 845-848
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Implanted manganese redistribution in Si after He+ irradiation and hydrogen pulse plasma treatment
    Autorzy:
    Werner, Z.
    Pochrybniak, C.
    Barlak, M.
    Piekoszewski, J.
    Korman, A.
    Heller, R.
    Szymczyk, W.
    Bocheńska, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/147018.pdf
    Data publikacji:
    2011
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    dilute magnetic semiconductors (DMS)
    Mn-implanted Si
    ion beam induced epitaxial crystallization
    Opis:
    Si-Mn alloy with a Mn content of a few percent is potentially a candidate for room temperature (RT) dilute magnetic semiconductor (DMS). However, the present methods of material manufacture suffer from problems with poor Mn solubility and thermodynamical limitations. We study a non-equilibrium method in which silicon is first implanted with 160 keV manganese ions to a dose of 1 × 1016 ions/cm2 and next either irradiated with 1.5 MeV 4He+ ions from the Warsaw Van de Graaff accelerator at 400°C or treated with high-energy hydrogen plasma pulses. Conclusion from Rutherford backscattering spectrometry (RBS) examination of the samples is that both approaches lead to recovery of crystalline surface layer with manganese occupying off-substitutional sites. The potential development of the method is discussed.
    Źródło:
    Nukleonika; 2011, 56, 1; 5-8
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Superconductivity of $MgB_2$ Layers Prepared on Silicon Substrate by Implantation of Magnesium Ions into Boron Substrate
    Autorzy:
    Trybuła, Z.
    Kempiński, W.
    Łoś, Sz.
    Kaszyńska, K.
    Trybuła, M.
    Piekoszewski, J.
    Werner, Z.
    Barlak, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1536977.pdf
    Data publikacji:
    2010-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.70.-b
    74.78.-w
    Opis:
    The results of investigation of the $MgB_2$ layers prepared on silicon substrate by implantation of Mg ions into boron substrate are presented. After implantation the annealing processes were carried out at temperatures 673 K, 773 K, and 873 K in a furnace in an atmosphere of flowing Ar-4%$H_2$ gas mixture. The samples were characterized by: four-probe electric conductivity measurements and magnetically modulated microwave absorption. Our results showed that due to silicon substrate the diffusion of implanted Mg ions into boron materials should be limited, and the superconducting phase forms a continuous $MgB_2$ layer and the resistivity for all samples fall down to zero below $T_{c}$. The transition temperature $T_{c}$ becomes higher with increasing annealing temperature: $T_{c}$=18 K (for annealing at $T_{A}$=673 K), $T_{c}$=20 K (for annealing at $T_{A}$=773 K), and $T_{c}$=27 K (for annealing at $T_{A}$=873 K).
    Źródło:
    Acta Physica Polonica A; 2010, 118, 2; 323-325
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Evolution of Superconducting Phase $MgB_x$
    Autorzy:
    Łoś, Sz.
    Kempiński, W.
    Piekara-Sady, L.
    Andrzejewski, B.
    Jurga, W.
    Kaszyńska, K.
    Piekoszewski, J.
    Werner, Z.
    Barlak, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812318.pdf
    Data publikacji:
    2008-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.70.-b
    74.78.-w
    Opis:
    Thin layers of $MgB_x$ were studied in order to define evolution of superconducting phase after Mg ions implantation into boron substrate. Three fluencies of energies 140, 80, and 40 keV were used to establish proper stoichiometry to synthesize homogeneous $MgB_2$ film. Additionally, the annealing processes were carried out at temperatures 400, 500, and 600°C in a furnace in an atmosphere of flowing $Ar-4%H_2$ gas mixture. The quality of the superconducting material was examined by magnetically modulated microwave absorption, and magnetic and resistivity measurements. The results showed that $T_c$ becomes higher with increasing annealing temperature. However, the fraction of superconducting phase decreases, due to partial evaporation of Mg ions and their deeper migration into boron substrate.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 1; 179-184
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High - temperature oxidation resistance in yttrium implanted stainless steel
    Autorzy:
    Barlak, M.
    Piekoszewski, J.
    Werner, Z.
    Sartowska, B.
    Waliś, L.
    Starosta, W.
    Kierzek, J.
    Kowalska, E.
    Wilhelm, R. A.
    Pochrybniak, C.
    Woźnica, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/146785.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    high-temperature oxidation resistance
    ion implantation
    yttrium
    Opis:
    Austenitic AISI 304, 316L and ferritic 430 stainless steels were implanted with yttrium to fluences ranging between 1 x 1015 and 5 x 1017 ions/cm2. The samples were subjected to oxidation in air at a temperature of 1000 centigrade for a period of 100 h and next examined by stereoscopic optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX) and Rutherford back scattering spectrometry (RBS). The results obtained with the use of ion implantation are discussed.
    Źródło:
    Nukleonika; 2012, 57, 4; 473-476
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Formation of Superconducting Regions of MgB_2 by Implantation of Boron Ions into Magnesium Substrate
    Autorzy:
    Trybuła, Z.
    Kempiński, W.
    Andrzejewski, B.
    Piekara-Sady, L.
    Kaszyński, J.
    Piekoszewski, J.
    Werner, Z.
    Richter, E.
    Prokert, F.
    Stanisławski, J.
    Barlak, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043433.pdf
    Data publikacji:
    2005-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.70.-b
    74.78.-w
    Opis:
    The results of investigation of the MgB$\text{}_{2}$ inter-metallic compound with the use of boron ions implantation and plasma pulse treatment are presented. The samples were characterized by: four-probe electric conductivity measurements, magnetically modulated microwave absorption, and magnetic measurements. For hydrogen and argon pulsed plasma treatment the samples with T$\text{}_{c}$ ranging from 10 K to 32 K were obtained. The superconducting phase does not form a continuous layer since the resistivity does not fall down to zero. Apparently, separate islands of superconducting phase are connected through metallic Mg paths. All samples are still below the percolation threshold.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 1; 165-170
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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