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Wyszukujesz frazę "Komarov, F. F." wg kryterium: Autor

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    Tytuł:
    Surface structure changes of InP and GaAs single crystals irradiated with high energy electrons and swift heavy ions
    Autorzy:
    Didyk, A.
    Komarov, F.
    Vlasukova, L.
    Yuvchenko, V.
    Hofman, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/147490.pdf
    Data publikacji:
    2006
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    InP crystals
    GaAs crystals
    preliminary disorder
    swift ion irradiation
    surface topography
    macrodefect
    Opis:
    InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.
    Źródło:
    Nukleonika; 2006, 51, 2; 105-109
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanocrystal- and Dislocation-Related Luminescence in~Si Matrix with InAs Nanocrystals
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Mudryi, A.
    Zuk, J.
    Pyszniak, K.
    Kulik, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504152.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    78.60.Fi
    Opis:
    We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500°C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050°C. A part of the samples implanted at 25°C was additionally exposed to $H_2^{+}$ ions (100 keV, 1.2 × $10^{16} cm^{-2}$ in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2-80 nm and create various concentration and distribution of different types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 204-207
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Greben, M.
    Komarov, A.
    Mudryi, A.
    Wesch, W.
    Wendler, E.
    Zuk, J.
    Kulik, M.
    Ismailova, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400427.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.72.Ff
    63.20.-e
    78.66.-w
    Opis:
    Nanosized crystallites have been synthesized in the Si and $SiO_2//Si$ structures by means of As (170 keV, $3.2 × 10^{16} cm^{-2}$) and In (250 keV, $2.8 × 10^{16} cm^{-2}$) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 809-812
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Mudryi, A.
    Dunetz, B.
    Wesch, W.
    Wendler, E.
    Karwat, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503945.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.72.Ff
    63.20.-e
    78.66.-w
    Opis:
    We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence "hot" implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/transmission electron diffraction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900°C up to 20-90 nm in those annealed at 1100°C. For the samples annealed at 900°C a broad band in the region of 0.75-1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 87-90
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions
    Autorzy:
    Komarov, F.
    Vlasukova, L.
    Milchanin, O.
    Greben, M.
    Parkhomenko, I.
    Mudryi, A.
    Wendler, E.
    Zukowski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198877.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.80.-x
    61.72.Ff
    63.20.-e
    78.66.-w
    Opis:
    Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high fluence ion implantation at 500C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 900-1100°C. Rutherford backscattering spectrometry, transmission electron microscopy/transmission electron diffraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two different types of the broad band emission extending over 0.75-1.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100C unlike the other one.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1288-1291
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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