Autor: Kret, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Application of Graphics Processing Unit for In-Line Electron Holography
Autorzy:: Morawiec, K.
Dłużewski, P.
Kret, S.
Szczepańska, A.
Li, T.
Sloan, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033020.pdf
Data publikacji:: 2017-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.37.Lp
68.37.Og
68.55.Nq
42.30.Rx
61.05.jp
07.05.Pj
42.30.-d
42.30.Wb
Opis:: In the present work, software for exit electron wave reconstruction based on the iterative approach was implemented and a new method for drift-correction of the focal series was proposed.
Źródło:: Acta Physica Polonica A; 2017, 131, 5; 1353-1356
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: TEM Study of the Structural Properties of Nanowires Based on Cd, Zn, Te grown by MBE on Silicon Substrates
Autorzy:: Kaleta, A.
Kret, S.
Sanchez, A.
Bilska, M.
Kurowska, B.
Szczepańska, A.
Płachta, J.
Wojnar, P.
Wojciechowski, T.
Powiązania:: https://bibliotekanauki.pl/articles/1032910.pdf
Data publikacji:: 2017-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Dz
81.07.-b
61.46.-w
62.23.Hj
81.07.Gf
61.46.Km
78.67.Uh
07.10.Pz
68.35.Gy
68.37.Lp
68.37.Og
68.37.Ma
Opis:: In this work we report on the atomic structures, elemental distribution, defects and dislocations of three types of semiconductor nanowires: ZnTe, CdTe, and complex ZnTe/(Cd,Zn)Te core/shell hetero-nanowires grown by a molecular beam epitaxy on (111) Si substrate using a vapor-liquid-solid mechanism. The structural properties and the chemical gradients were measured by transmission electron microscopy methods. The nanowires reveal mainly sphalerite structure, however wurtzite nanowires were also observed.
Źródło:: Acta Physica Polonica A; 2017, 131, 5; 1399-1405
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM
Autorzy:: Ivaldi, F.
Kret, S.
Szczepańska, A.
Czernecki, R.
Kryśko, M.
Grzanka, S.
Leszczyński, M.
Powiązania:: https://bibliotekanauki.pl/articles/2048084.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.bg
68.37.Lp
68.65.Fg
Opis:: Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 660-662
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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