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Wyświetlanie 1-15 z 37
Tytuł:
Temperature Dependence of Antiferromagnetic Interlayer Exchange Coupling in EuS-PbS Multilayers
Autorzy:
Chernyshova, M.
Kowalczyk, L.
Baran, M.
Szczerbakow, A.
Story, T.
Smits, C. J. P.
Filip, A. T.
Swagten, H. J. M.
de Jonge, W. J. M.
Sipatov, A. Yu.
Powiązania:
https://bibliotekanauki.pl/articles/2038129.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
Antiferromagnetic interlayer exchange coupling in semiconductor EuS-PbS-EuS ferromagnetic trilayers grown on PbS (001) substrates with ultrathin (0.6-1.2 nm) nonmagnetic PbS spacers is studied by SQUID magnetometry and model calculations. Analysis of the experimentally observed magnetic field and temperature dependence of the magnetization of EuS-PbS structures reveals a rapid decrease in the interlayer coupling energy with increasing temperature indicating a temperature dependence of the microscopic coupling mechanism acting in these all-semiconductor ferromagnetic/nonmagnetic multilayers.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 599-605
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Anisotropy in (Ge,Mn)Te Layers
Autorzy:
Knoff, W.
Łusakowski, A.
Wołoś, A.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/1386196.pdf
Data publikacji:
2015-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.Gw
76.50.+g
Opis:
Ferromagnetic resonance study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor (Ge,Mn)Te with Mn content of 12 and 21 at.% grown by molecular beam epitaxy on BaF₂ (111) substrates. The layers with low Mn content grow in the rhombohedral crystal structure and exhibit perpendicular magnetic anisotropy whereas the layers with Mn content higher than about 20 at.% are of cubic (rock-salt) structure and show regular easy-plane type magnetic anisotropy. The quantitative analysis of the angular dependence of the ferromagnetic resonant field is performed taking into account the magnetic energy contributions due to rhombohedral distortion (axial term along the (111) growth direction of the layer) and the crystal field terms allowed for ferromagnetic systems of rhombohedral symmetry.
Źródło:
Acta Physica Polonica A; 2015, 127, 2; 404-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetization of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te Semimagnetic Semiconductor
Autorzy:
Mac, W.
Story, T.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1876309.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.20.Hr
Opis:
We present experimental studies of magnetization of Pb$\text{}_{1-x}$Cr$\text{}_{x}$Te (x ≤ 0.01) crystals. The reasonable description of the data is obtained for a composition of x ≤ 0.001 using Cr$\text{}^{+++}$ model (Brillouin type paramagnetism S = 3/2).
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 492-494
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of EuS/PbS Semiconducting Structures
Autorzy:
Stachow-Wójcik, A.
Twardowski, A.
Story, T.
Dobrowolski, W.
Grodzicka, E.
Sipatow, A.
Powiązania:
https://bibliotekanauki.pl/articles/1968421.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
Opis:
We report results of magnetization study of EuS/PbS superstructures with different thicknesses of magnetic and nonmagnetic layers. Reduction of ferromagnetic phase transition temperature was found with decreasing EuS thickness. Reasonable description of this effect is obtained within the model based on the mean field approximation.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 985-988
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Vertical Electron Transport through PbS-EuS Structures
Autorzy:
Wrotek, S.
Dybko, K.
Morawski, A.
Mąkosa, A.
Wosiński, T.
Figielski, T.
Tkaczyk, Z.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Szczerbakow, A.
Grasza, K.
Wróbel, J.
Palosz, W.
Powiązania:
https://bibliotekanauki.pl/articles/2036032.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
Temperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 629-635
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Possible Origin of Large Value of Magnetic Anisotropy Constant in PbSnMnTe Mixed Crystals
Autorzy:
Łusakowski, A.
Story, T.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1929772.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Gw
Opis:
In PbSnMnTe crystals with the concentration of conducting holes of the order of 10$\text{}^{21}$ cm$\text{}^{-3}$, the magnetic anisotropy constant K measured in ferromagnetic resonance experiments is nearly one order of magnitude larger than expected. In the present paper we investigate a contribution ΔK to the anisotropy constant, origin of which is the s-d interaction and the spin-orbit coupling.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 829-831
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlation between Magnetic and Electronic Properties of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te
Autorzy:
Łusakowski, A.
Górska, M.
Arciszewska, A.
Grodzicka, E.
Gołacki, Z.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/1931955.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
Magnetic susceptibility, electron paramagnetic resonance and transport properties of Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te with 0.04 < x < 0.07 and hole concentrations in the range from 0.7 × 10$\text{}^{20}$ to 16 × 10$\text{}^{20}$ cm$\text{}^{-3}$ were investigated. After annealing of the Sn$\text{}_{1-x}$Gd$\text{}_{x}$Te samples with x < 0.05 in Sn vapor their hole concentration decreased from 5 × 10$\text{}^{20}$ cm$\text{}^{-3}$ to about 3 × 10$\text{}^{20}$ cm$\text{}^{-3}$ and their paramagnetic Curie temperature increased a few times. In samples with x > 0.05 no significant change in the magnetic properties was observed after annealing, even at lower hole concentrations. The results can be explained by assuming that an indirect exchange interaction, 4f-5d-band electrons, is responsible for the coupling among Gd ions.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 197-200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Electrical Characterization of PbS-EuS Ferromagnetic Semiconductor Microstructures
Autorzy:
Wrotek, S.
Morawski, A.
Tkaczyk, Z.
Mąkosa, A.
Wosiński, T.
Dybko, K.
Łusakowska, E.
Story, T.
Sipatov, A. Yu.
Pécz, B.
Grasza, K.
Szczerbakow, A.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038135.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Le
75.30.Et
75.70.Cn
Opis:
Current-voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10 x 10 μm$\text{}^{2}$ to 100 x 100 μm$\text{}^{2}$) ferromagnetic EuS-PbS-EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 615-620
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Specific Heat Study of the Competition between Ferro- and Antiferromagnetic Spin-Spin exchange Interactions in PbSnMnTe
Autorzy:
Łazarczyk, P.
Jędrzejczak, A.
Story, T.
Arciszewska, M.
Gałązka, R. R.
Powiązania:
https://bibliotekanauki.pl/articles/1952041.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.50.Lk
Opis:
Magnetic contribution to the specific heat, magnetic susceptibility and Hall effect are experimentally studied in Pb$\text{}_{1-x-y}$Sn$\text{}_{y}$Mn$\text{}_{x}$Te semimagnetic semiconductors with y=0.72 and x=0.08 and with different carrier concentrations 10$\text{}^{20}$ ≤ p ≤ 10$\text{}^{21}$ cm$\text{}^{-3}$. The ferromagnetism observed in crystals with p ≥ 3×10$\text{}^{20}$ cm$\text{}^{-3}$ breaks down with a decreasing concentration of carriers due to an increasing competition between Ruderman-Kittel-Kasuya-Yoshida and superexchange interactions.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 891-894
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetization Studies of Antiferromagnetic Interlayer Coupling in EuS-SrS Semiconductor Multilayers
Autorzy:
Samburskaya, T.
Sipatov, A.
Volobuev, V.
Dziawa, P.
Knoff, W.
Kowalczyk, L.
Szot, M.
Story, T.
Powiązania:
https://bibliotekanauki.pl/articles/1400494.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
Opis:
Temperature and magnetic field dependence of magnetization of EuS-SrS multilayers grown epitaxially on KCl (001) substrate is experimentally studied by superconducting magnetometry technique. In these lattice-matched semiconductor heterostructures EuS layers are ferromagnetic quantum wells whereas SrS layers are nonmagnetic spacer barriers. The multilayers composed of EuS layers with thickness 3.5-5 nm and SrS layers (thickness 0.5-10 nm) exhibit ferromagnetic transition at 17 K. In the multilayers with ultrathin SrS spacers (0.5-1 nm) a nonmonotonic temperature dependence of magnetization as well as a characteristic switching in magnetic hysteresis loops is observed. These experimental findings are explained considering antiferromagnetic interlayer coupling between ferromagnetic EuS layers via nonmagnetic SrS spacers. The strength of this coupling is determined based on model magnetization calculations.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 133-136
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
Autorzy:
Pietrzyk, M. A.
Kowalski, B. J.
Orłowski, B. A.
Knoff, W.
Osinniy, V.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/2047678.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Mq
Opis:
We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 275-281
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor
Autorzy:
Kowalik, I. A.
Guziewicz, E.
Kopalko, K.
Yatsunenko, S.
Godlewski, M.
Wójcik, A.
Osinniy, V.
Krajewski, T.
Story, T.
Łusakowska, E.
Paszkowicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/2047710.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
78.66.Hf
81.15.Kk
Opis:
ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 401-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi Level Position in GaMnAs - a Thermoelectric Study
Autorzy:
Osinniy, V.
Jędrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027483.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
73.50.-h
Opis:
Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E$\text{}_{F}$ and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E$\text{}_{F}$=275±50 meV and p=(2.5± 0.5)×10$\text{}^{20}$ cm$\text{}^{-3}$ (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10$\text{}^{20}$ cm$\text{}^{-3}$. At T=120 K, these parameters vary between E$\text{}_{F}$=380 meV and p=3.5×10$\text{}^{20}$ cm$\text{}^{-3}$ for x=0.015 to E$\text{}_{F}$=110 meV and p=5×10$\text{}^{19}$ cm$\text{}^{-3}$ for x=0.06.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 327-334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransport Study of MBE grown Pb$\text{}_{1-x}$Eu$\text{}_{x}$Se Epilayers
Autorzy:
Dobrowolski, W.
Grodzicka, E.
Story, T.
Lambrecht, A.
Bottner, H.
Tacke, M.
Powiązania:
https://bibliotekanauki.pl/articles/1950743.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Le
73.50.Jt
Opis:
Hall effect and electron conductivity investigations of MBE grown epilayers of Pb$\text{}_{1-x}$Eu$\text{}_{x}$Se (0 ≤ x ≤ 0.06) as a function of temperature and magnetic field are reported. The strong Hall coefficient dependence on the magnetic field was found for p-type samples grown with Se excess. The possible origins of this effect are discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 759-762
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Features of Energy Spectrum of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te Doped with V
Autorzy:
Artamkin, A. I.
Dobrovolsky, A. A.
Dziawa, P.
Story, T.
Slynko, E. I.
Slynko, V. E.
Ryabova, L. I.
Khokhlov, D. R.
Powiązania:
https://bibliotekanauki.pl/articles/2046904.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Nr
71.28.+d
71.55.-i
72.40.+w
Opis:
Recently new effects that are not characteristic of undoped lead telluride, such as the Fermi level pinning, giant negative magnetoresistance, were observed in Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te alloys doped with transition and rare earth elements - Cr, Mo, Yb. We have studied transport and magnetic properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te doped with another transition element - vanadium. A series of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te(V) samples of different composition and degree of doping was investigated. It was observed that the resistivity demonstrates activation behavior at low temperatures for the samples with considerable amount of vanadium as well as for the samples without vanadium. The activation energy is proportional to the Mn content. In some of the samples, photoconductivity was observed at low temperatures. The results are discussed in terms of a model assuming formation of the impurity level by the vanadium impurity and the effect of the Fermi level pinning by this level.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 151-156
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 37

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