Autor: Keršulis, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of Sr Content on CMR Effect in Polycrystalline $La_{1-x}Sr_{x}MnO_{3}$ Thin Films
Autorzy:: Žurauskienė, N.
Balevičius, S.
Stankevič, V.
Paršeliūnas, J.
Keršulis, S.
Abrutis, A.
Plaušinaitienė, V.
Powiązania:: https://bibliotekanauki.pl/articles/1807950.pdf
Data publikacji:: 2009-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.47.Gk
75.47.Lx
75.30.Hx
85.70.Kh
Opis:: The magnetoresistance of thin polycrystalline $La_{1-x}Sr_{x}MnO_{3}$ films deposited on lucalox substrate using metal organic chemical vapor deposition technique was investigated in pulsed magnetic fields up to 18 T in the temperature range 100-320 K. The influence of film preparation conditions, ambient temperature variation and Sr content is analyzed in order to determine the optimal conditions for the design of CMR-B-scalar magnetic field sensor based on thin manganite film, operating at room temperature.
Źródło:: Acta Physica Polonica A; 2009, 115, 6; 1136-1138
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: High Pulsed Magnetic Field Sensor Based on La-Ca-Mn-O Thin Polycrystalline Films
Autorzy:: Balevičius, S.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Novickij, J.
Altgilbers, L. L.
Clarke, F.
Powiązania:: https://bibliotekanauki.pl/articles/2041727.pdf
Data publikacji:: 2005-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.30.Kz
73.40.Gk
85.70.Ay
61.72.Mm
Opis:: It is demonstrated that polycrystalline La$\text{}_{0.33}$Ca$\text{}_{0.67}$MnO$\text{}_{3}$ thin film sensors can be used to measure pulsed strong magnetic fields with microsecond duration rise and decay times. The response characteristics of these sensors were investigated using 0.7-1.0 ms duration bell-shaped magnetic field pulses of 10-20 T amplitudes and by using special waveform magnetic field pulses with amplitudes of 40 T and decay times of 50μs. The response of these magnetic field sensors was compared with those of conventional loop sensors and Faraday rotation sensors using Bi$\text{}_{12}$SiO$\text{}_{20}$ single crystals as a known standard.
Źródło:: Acta Physica Polonica A; 2005, 107, 1; 207-210
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:: Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:: https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:: The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja