Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Sobolewski, M." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors
Autorzy:
Guziewicz, M.
Slysz, W.
Borysiewicz, M.
Kruszka, R.
Sidor, Z.
Juchniewicz, M.
Golaszewska, K.
Domagala, J.
Rzodkiewicz, W.
Ratajczak, J.
Bar, J.
Wegrzecki, M.
Sobolewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1492719.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.62.Bf
74.78.-w
81.15.Cd
81.15.Jj
Opis:
We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on $Al_2O_3$ and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × $10^6$ A/$cm^2$ at 4.8 K.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-076-A-079
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Current Distribution in Y-Ba-Cu-O Superconducting Microbridges Containing Π-Shaped Channel for Easy Vortex Motion
Autorzy:
Sulcas, J.
Steponaviciene, L.
Jukna, A.
Jung, G.
Plausinaitiene, V.
Abrutis, A.
Gong, M.
Sobolewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1505543.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.78.-w
74.25.Sv
74.25.F-
74.25.Wx
Opis:
A mixed state in dc-biased thin films of II-type superconductors realizes the Abrikosov magnetic vortices/antivortices, which are the result of the current-self magnetic field penetration into the film at temperatures lower than its critical temperature $T_{c}$. A nucleation of vortices/antivortices at the superconducting film's edges, their motion perpendicular to the direction of biasing current, and the annihilation in the film's center originates from a current dissipation in the superconductor and expresses itself in experiments as a dc voltage. This work reports on the results of simulation of current density in a 50 μm wide, 100 μm long, and 0.3 μm thick $YBa_2Cu_3O_{7 - x}$ microbridges containing Π-shaped 5 μm wide single channel of easy vortex motion fabricated by means of laser-writing technique. Analyzing a two-dimensional-net of resistors and assuming that, due to the Meissner-Ochsenfeld effect, the magnetic flux penetration into superconducting film is nonlinear, we demonstrate that presence of a Π-shaped channel causes a non-homogeneous distribution of current in the microbridge.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 183-185
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrafast Phenomena in Freestanding LT-GaAs Devices
Autorzy:
Marso, M.
Mikulics, M.
Adam, R.
Wu, S. Wu.
Zheng, X.
Camara, I.
Siebe, F.
Förster, A.
Güsten, R.
Kordoš, P.
Sobolewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/2041640.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.40.+w
78.30.Fs
85.60.-q
85.60.Gz
Opis:
We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10$\text{}^{-7}$ A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO$\text{}_{2}$ host substrate compared to the native substrate.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 109-117
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation Details of Vortex Density in Laser-Written Π-Shaped Channel of YBCO Bridge by Means of I-V Dependences
Autorzy:
Steponaviciene, L.
Sulcas, J.
Jukna, A.
Jung, G.
Plausinaitiene, V.
Abrutis, A.
Maneikis, A.
Gong, M.
Sobolewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1505530.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.78.-w
74.25.Sv
74.25.F-
74.25.Wx
Opis:
A current-self-induced magnetic field $H_{j}$, such that $H_{c1} < H_{j} < H_{c2}$ at $T < T_{c}$, penetrates a thin-film, type-II superconductor forming the Abrikosov magnetic vortex-antivortex pairs in the film's areas of weakest superconductivity. Our atomic force microscopy and scanning tunneling microscopy images confirm that in 50 μm wide, 100 μm long and 0.3 μm thick $YBa_2Cu_3O_{7 - x}$ superconducting devices magnetic flux penetrates first into a 5 μm wide, Π-shaped and partially deoxygenated (x ≈ 0.2) channel for easy vortex motion. When the Lorentz force overcomes pinning force in the channel, the flux starts to move and its drift dissipates energy inducing dc voltage. This work reports on the density of coherently moving vortices along the channel vs. temperature in range from $0.93T_{c}$ to $0.97T_{c}$. Our simulations show that the vortex density vs. temperature dependence extracted from I-V measurements of our devices follows the temperature dependence of magnetic field penetration depth and the coherence length of the superconductor.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 180-182
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrathin NbN Films for Superconducting Single-Photon Detectors
Autorzy:
Słysz, W.
Guziewicz, M.
Borysiewicz, M.
Domagała, J.
Pasternak, I.
Hejduk, K.
Rzodkiewicz, W.
Ratajczak, J.
Bar, J.
Węgrzecki, M.
Grabiec, P.
Grodecki, R.
Węgrzecka, I.
Sobolewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1504147.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.62.Bf
74.78.-w
81.15.Cd
81.15.Jj
Opis:
We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal $Al_2O_3$ and Si wafers, and $SiO_2$ and $Si_3N_4$ buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 200-203
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies