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Wyszukujesz frazę "annealing" wg kryterium: Wszystkie pola

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors
    Autorzy:
    Fiedler, J.
    Heera, V.
    Voelskow, M.
    Mücklich, A.
    Reuther, H.
    Skorupa, W.
    Gobsch, G.
    Helm, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400477.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.78.-w
    Opis:
    Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin $SiO_2$ cover layer and subsequent rapid thermal annealing. Gallium accumulation at the $SiO_2//Si$ and $SiO_2//Ge$ interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6-7 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 916-919
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing
    Autorzy:
    Prucnal, S.
    Shumann, T.
    Skorupa, W.
    Abendroth, B.
    Krockert, K.
    Möller, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503796.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jj
    78.55.-m
    78.30.Am
    78.55.Ap
    Opis:
    Phosphorus ion implantation was used for the emitter formation in mono- and multicrystalline silicon solar cells. After ion implantation the silicon is strongly disordered or amorphous within the ion range. Therefore subsequent annealing is required to remove the implantation damage and activate the doping element. Flash-lamp annealing offers here an alternative route for the emitter formation at overall low thermal budget. During flash-lamp annealing, only the wafer surface is heated homogeneously to very high temperatures at ms time scales, resulting in annealing of the implantation damage and electrical activation of phosphorus. However, variation of the pulse time also allows to modify the degree of annealing of the bulk region to some extent as well, which can have an influence on the gettering behaviour of metallic bulk impurities. The μ-Raman spectroscopy showed that the silicon surface is amorphous after ion implantation. It could be demonstrated that flash-lamp annealing at 800°C for 20 ms even without preheating is sufficient to recrystallize implanted silicon. The highest carrier concentration and efficiency as well as the lowest resistivity were obtained after annealing at 1200°C for 20 ms both for mono- and multicrystalline silicon wafers. Photoluminescence results point towards P-cluster formation at high annealing temperatures which affects metal impurity gettering within the emitter.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 30-34
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of $Si_{1-x}Ge_x$ Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing
    Autorzy:
    Gao, K.
    Prucnal, S.
    Mücklich, A.
    Skorupa, W.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400450.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uf
    78.55.Ap
    68.37.Lp
    Opis:
    In our contribution we present the fabrication of $Si_{1-x}Ge_x$ alloy by ion-implantation and millisecond flash lamp annealing. The 100 keV Ge ions at the fluence of $10 \times 10^{16}, 5 \times 10^{16}$, and $3 \times 10^{16} cm^{-2}$ were implanted into monocrystalline (100)-oriented Si wafers covered by 50 nm thermal oxide. In the consequence, the 50 nm amorphous Ge rich Si layers were obtained. The recrystallization of the implanted layers and the $Si_{1-x}Ge_x$ alloying were accomplished by flash lamp annealing with the pulse duration of 20 ms. Flash lamp treatment at high energy densities leads to local melting of the Ge-rich silicon layer. Then the recrystallization takes place due to the millisecond range liquid phase epitaxy. Formation of the high quality monocrystalline $Si_{1-x}Ge_x$ layer was confirmed by the μ-Raman spectroscopy, the Rutherford backscattering channeling and cross-sectional transmission electron microscopy investigation. The μ-Raman spectra reveal three phonon modes located at around 293, 404, and $432 cm^{-1}$ corresponding to the Ge-Ge, Si-Ge and Si-Si in the $Si_{1-x}Ge_x$ alloy vibrational modes, respectively. Due to much higher carrier mobility in the $Si_{1-x}Ge_x$ layers than in silicon such system can be used for the fabrication of advanced microelectronic devices.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 858-861
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer
    Autorzy:
    Prucnal, S.
    Jiao, F.
    Reichel, D.
    Zhao, K.
    Cornelius, S.
    Turek, M.
    Pyszniak, K.
    Drozdziel, A.
    Skorupa, W.
    Helm, M.
    Zhou, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1199248.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.jn
    61.72.Cc
    78.55.Hx
    Opis:
    Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1404-1407
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing
    Autorzy:
    Prucnal, S.
    Turek, M.
    Gao, K.
    Zhou, S.
    Pyszniak, K.
    Droździel, A.
    Żuk, J.
    Skorupa, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400484.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    78.67.Hc
    81.05.Ea
    81.07.Ta
    81.15.Lm
    Opis:
    Different semiconductor nanocrystals synthesized in dielectrics on silicon are very interesting for applications in non-volatile memories and photovoltaics. In this paper we present an overview of microstructural and opto-electronic properties of different III-V quantum dots embedded in $SiO_2$ and $Si_3N_4$ made by sequential ion implantation and millisecond range flash lamp annealing. It is shown that within 20 ms post-implantation annealing high quality crystalline III-V quantum dots can be formed in different matrices. Formation of crystalline III-V quantum dots was confirmed by cross-section transmission electron microscopy, photoluminescence and μ-Raman spectroscopy. Flash lamp annealing is essentially a single-flash-single-wafer technique whose main attributes are the ease and control of processing over large wafer batches.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 935-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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