Autor: Toropov, A. A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Optically Pumped Low Threshold ZnSe Based Lasers with 2.8 ML CdSe Active Region
Autorzy:: Sorokin, S.
Toropov, A.
Shubina, T.
Lebedev, A.
Sedova, I.
Ivanov, S.
Waag, A.
Powiązania:: https://bibliotekanauki.pl/articles/1992195.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Hf
78.45.+h
Opis:: Room-temperature optically pumped (Zn,Mg)(S,Se)/(Zn,Cd)Se laser structures have been grown by molecular beam epitaxy. Using of alternatively-strained short-period superlattice waveguide results in low threshold power density values over the whole blue-green (470-520 nm) wavelength range. Incorporation of CdSe fractional monolayer active region provides more than fourfold further decrease in threshold with respect to quantum well laser structure. Optical and structural properties of laser structure with 2.8 monolayer CdSe are discussed in detail.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 539-544
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: CdSe Layers of Below Critical Thickness in ZnSe Matrix: Intrinsic Morphology and Defect Formation
Autorzy:: Sedova, I.
Shubina, T.
Sorokin, S.
Sitnikova, A.
Toropov, A.
Ivanov, S.
Willander, M.
Powiązania:: https://bibliotekanauki.pl/articles/1992185.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.45.+h
Opis:: Three main stages of the intrinsic morphology transformation of MBE grown CdSe fractional monolayers in ZnSe with increase in their nominal thickness w in the 0.1-3.0 monolayer range were found using both structural and optical characterization techniques. Emergence of the extended (15-30 nm) CdSe-enriched quantum-dot-like pseudomorphic islands at w>0.7 monolayer with the density increasing up to 2.5×10$\text{}^{10}$ cm$\text{}^{-2}$ at w=2.8 monolayer is clearly displayed in the optical properties of CdSe fractional monolayer nanostructures. The below critical thickness CdSe fractional monolayers having extremely high quantum efficiency can be very perspective as an active region of ZnSe-based blue-green lasers.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 519-525
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Micro-photoluminescence studies of CdSe/ZnSe quantum dot structures grown under different conditions
Autorzy:: Rakhlin, M.
Sorokin, S.
Sedova, I.
Usikova, A.
Gronin, S.
Belyaev, K.
Ivanov, S.
Toropov, A.
Powiązania:: https://bibliotekanauki.pl/articles/1156645.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.Hb
78.55.Et
81.07.Ta
Opis:: We report on comparative studies of CdSe/ZnSe quantum dot structures grown by molecular beam epitaxy either with or without predeposition of a sub-monolayer-thick CdTe layer (stressor). Also we consider the structure grown in a thermal activation mode. Emission properties of individual quantum dots are investigated by micro-photoluminescence spectroscopy using 500 nm apertures opened in a non-transparent gold mask. The density of emitting quantum dots and the spectral width of the single-dot emission lines are estimated.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-117-A-119
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Structural and Optical Properties of Alternately-Strained $ZnS_{x}Se_{1-x}$/CdSe Superlattices with Effective Band-Gap 2.5-2.6 eV
Autorzy:: Evropeytsev, E.
Sorokin, S.
Gronin, S.
Sedova, I.
Klimko, G.
Sitnikova, A.
Baidakova, M.
Ivanov, S.
Toropov, A.
Powiązania:: https://bibliotekanauki.pl/articles/1376074.pdf
Data publikacji:: 2014-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Pt
81.07.-b
78.55.-m
Opis:: We report on design and fabrication of alternately-strained $ZnS_xSe_{1-x}$/CdSe short period superlattices with the effective band-gap 2.52, 2.58, and 2.61 eV and the total thickness ≈300 nm. Transmission electron microscopy, X-ray diffraction, and photoluminescence measurements reveal negligibly small density of misfit dislocations in the superlattices. The investigation of carrier transport along the superlattice growth axis, performed by the photoluminescence measurements of a superlattice with one enlarged quantum well, confirms efficient Bloch-type transport at temperatures above ≈ 100 K. Such superlattices look promising for the applications as a material for the wide band-gap photoactive region of a multi-junction solar cell comprising both III-V and II-VI materials.
Źródło:: Acta Physica Polonica A; 2014, 126, 5; 1156-1158
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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