Wszystkie pola: ion beam sputtering - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Mechanisms of Carrier Transport in $Cu_x(SiO_2)_{1-x}$ Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions
Autorzy:: Fedotov, A.
Mazanik, A.
Svito, I.
Saad, A.
Fedotova, V.
Czarnacka, K.
Koltunowicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1402220.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.37.+q
72.80.Ga
73.22.-f
61.46.Df
64.60.ah
Opis:: The present paper investigates the temperature/frequency dependences of admittance Z in the granular $Cu_x(SiO_2)_{1-x}$ nanocomposite films around the percolation threshold $x_{C}$ in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold $x_{C}$ ≈ 0.59 and nearly metallic behaviour beyond the $x_{C}$. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < $x_{C}$ exhibited behavior close to ReZ(f) ≈ $f^{-s}$ with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > $x_{C}$), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 883-886
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Voltage and Current Resonance in Nanocomposite $(FeCoZr)_x(CaF_2)_{100-x}$ Produced by Ion-Beam Sputtering in Pure Argon Atmosphere
Autorzy:: Koltunowicz, T.
Zukowski, P.
Bondariev, V.
Fedotov, A.
Svito, I.
Fedotova, J.
Saad, A.
Powiązania:: https://bibliotekanauki.pl/articles/1402224.pdf
Data publikacji:: 2015-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.23.Pq
79.20.Rf
81.40.Ef
72.80.Le
Opis:: In this paper the results of investigations of electrical properties of metal-dielectric nanocomposites $(FeCoZr)_x(CaF_2)_{100-x}$ are presented. The samples with the metallic phase content x=45.7 at.% were produced by ion-beam sputtering method in pure argon atmosphere, and subsequently annealed at 398 K for 15 min. The measurements of electrical properties were performed in the frequency range from 50 Hz to 1 MHz. The frequency dependences of phase angle θ, capacity $C_{p}$, conductivity σ and dielectric loss factor tanδ were measured at seven different temperatures ranging from 148 K to 263 K. It was found that the nanocomposite exhibits the phenomena of voltage resonance and current resonance, characteristic of the conventional RLC circuits with series and parallel connections of elements.
Źródło:: Acta Physica Polonica A; 2015, 128, 5; 897-900
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: The Features of Real Part of Admittance in the Nanocomposites $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ Manufactured by the Ion-Beam Sputtering Technique with Ar Ions
Autorzy:: Kołtunowicz, T.
Zhukowski, P.
Fedotova, V.
Saad, A.
Larkin, A.
Fedotov, A.
Powiązania:: https://bibliotekanauki.pl/articles/1503798.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.20.Rf
73.22.-f
84.37.+q
72.20.Ee
Opis:: The temperature and frequency dependences of the admittance real part σ (T, f) in granular $(Fe_{45}Co_{45}Zr_{10})_{x}(Al_2O_3)_{100 - x}$ nanocomposite films around the percolation threshold $x_{C}$ were investigated. The behaviour of σ (T, f) vs. the temperature and frequency over the ranges 77-300 K and 50 Hz-1 MHz, respectively, displays the predominance of an activation (hopping) conductance mechanism for the samples below the percolation threshold $x_{C}$ and of a metallic one beyond the $x_{C}$ determined as 54 ± 2 at.%. The mean hopping range d for the nanoparticles diameter D was estimated at different metallic phase content x.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 35-38
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Hopping Conductance in Nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ Manufactured by Ion-Beam Sputtering of Complex Target in $Ar+O_2$ Ambient Gas
Autorzy:: Kołtunowicz, T.
Zhukowski, P.
Fedotova, V.
Saad, A.
Fedotov, A.
Powiązania:: https://bibliotekanauki.pl/articles/1503812.pdf
Data publikacji:: 2011-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.20.Rf
73.22.-f
84.37.+q
72.20.Ee
Opis:: We report the investigation of a real part of the admittance σ of granular nanocomposites $(Fe_{0.45}Co_{0.45}Zr_{0.10})_{x}(Al_2O_3)_{1 - x}$ with 0.30 < x < 0.70 in the dielectric (hopping) regime. An analysis of the σ(T, f, x) dependences in the as-deposited and annealed films over the temperature 77 K < T < 300 K and frequency 50 < f < $10^6$ Hz ranges displayed the predominance of an activation (hopping) conductance mechanism with dσ/ dT > 0 for the samples below the percolation threshold $x_{C}$ ≈ 0.76 ± 0.05. Based on the earlier models for hopping AC conductance, computer simulation of the frequency coefficient $α_{f}$ of hopping conductance depending on the probability of jump p, frequency f, and also on the shape of σ(f) curve was performed. The experimental and simulation results revealed a good agreement.
Źródło:: Acta Physica Polonica A; 2011, 120, 1; 39-42
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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