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    Wyświetlanie 1-8 z 8
    Tytuł:
    Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector
    Autorzy:
    Martyniuk, P.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/201922.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    barrier detectors
    unipolar barrier
    nBn
    HgCdTe
    photodetectors
    Opis:
    The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 ?m The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 1; 211-220
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    • odwiedzone
    Tytuł:
    Modeling of HgCdTeLWIR detector for high operation temperature conditions
    Autorzy:
    Martyniuk, P.
    Gawron, W.
    Madejczyk, P.
    Rogalski, A.
    Piotrowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/220771.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    HgCdTe
    IR detector
    Auger suppression
    HOT detectors
    Opis:
    The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
    Źródło:
    Metrology and Measurement Systems; 2013, 20, 2; 159-170
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of performance limits of the HOT HgCdTe photodiodes with colloidal quantum dot infrared detectors
    Autorzy:
    Rogalski, A.
    Kopytko, M.
    Martyniuk, P.
    Hu, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/201444.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    colloidal quantum dot infrared photodetectors
    HOT infrared detectors
    HgCdTe photodiodes
    p-i-n depleted photodiodes
    BLIP performance
    Opis:
    In the past decade, there has been significant progress in development of the colloidal quantum dot (CQD) photodetectors. The QCD’s potential advantages include: cheap and easy fabrications, size-tuneable across wide infrared spectral region, and direct coating on silicon electronics for imaging, which potentially reduces array cost and offers new modifications like flexible infrared detectors. The performance of CQD high operating temperature (HOT) photodetectors is lower in comparison with detectors traditionally available on the global market (InGaAs, HgCdTe and type-II superlattices). In several papers their performance is compared with the semiempirical rule, “Rule 07” (specified in 2007) for P-on-n HgCdTe photodiodes. However, at present stage of technology, the fully-depleted background limited HgCdTe photodiodes can achieve the level of room-temperature dark current considerably lower than predicted by Rule 07. In this paper, the performance of HOT CQD photodetectors is compared with that predicted for depleted P-i-N HgCdTe photodiodes. Theoretical estimations are collated with experimental data for both HgCdTe photodiodes and CQD detectors. The presented estimates provide further encouragement for achieving low-cost and high performance MWIR and LWIR HgCdTe focal plane arrays operating in HOT conditions.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 4; 845-855
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes
    Autorzy:
    Madejczyk, P.
    Gawron, W.
    Piotrowski, A.
    Kłos, K.
    Rutkowski, J.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506804.pdf
    Data publikacji:
    2010-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.79.Pw
    07.57.Kp
    73.21.Cd
    78.67.Pt
    79.60.Jv
    Opis:
    One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for $P^{+}$-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, $AsH_3$ precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of $AsH_3$ by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher $R_0A$ product of HgCdTe photodiodes in temperatures close to 230 K.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 6; 1199-1204
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
    Autorzy:
    Benyahia, D.
    Kubiszyn, Ł.
    Michalczewski, K.
    Kębłowski, A.
    Martyniuk, P.
    Piotrowski, J.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1055151.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    68.65.Cd
    81.05.Ea
    61.05.cp
    Opis:
    Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 322-324
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through two step passivation technique
    Autorzy:
    Michalczewski, K.
    Ivaldi, F.
    Kubiszyn, Ł.
    Benyahia, D.
    Boguski, J.
    Kębłowski, A.
    Martyniuk, P.
    Piotrowski, J.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1055156.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    73.25.+i
    82.45.Cc
    Opis:
    We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 325-328
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mid-wave InAs/GaSb superlattice barrier infrared detectors with nBnN and pBnN design
    Autorzy:
    Gomółka, E.
    Markowska, O.
    Kopytko, M.
    Kowalewski, A.
    Martyniuk, P.
    Rogalski, A.
    Rutkowski, J.
    Motyka, M.
    Krishna, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/201992.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    InAs/GaSb type-II superlattices
    infrared detectors
    barrier detectors
    nBn detector
    p-i-n detector
    InAs
    GaSb
    detektory podczerwieni
    detektor bariery
    detektor nBn
    detektory p-i-n
    Opis:
    We present an investigation of optical and electrical properties of mid-wavelength infrared (MWIR) detectors based on InAs/GaSb strained layer superlattices (SLs) with nBnN and pBnN design. The temperature-dependent behavior of the bandgap was investigated on the basis of absorption measurements. A 50% cut-off wavelength of around 4.5 μm at 80 K and increase of up to 5.6 μm at 290 K was found. Values of Varshni parameters, zero temperature bandgap E0 and empirical coefficients α and β were extracted. Arrhenius plots of dark currents of nBnN and pBnN detectors were compared with the p-i-n design. Dark current density reduction in nBnN and pBnN detectors is observed in comparison to the p-i-n device. This shows a suppression of Shockley-Read-Hall (SRH) processes by means of introducing barrier architecture.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2018, 66, 3; 317-323
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fast Response Hot (111) HGCDTE MWIR Detectors
    Autorzy:
    Grodecki, K.
    Martyniuk, P.
    Kopytko, M.
    Kowalewski, A.
    Stępień, D.
    Kębłowski, A.
    Piotrowski, A.
    Piotrowski, J.
    Gawron, W.
    Rogalski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/221254.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    HgCdTe
    MWIR
    photodetector
    response time
    Opis:
    In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N+pP+ heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor. The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an Optical Parametric Oscillator (OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 1012 cm Hz1/2/W peak detectivity and < 1 ns time constant for V > 500 mV.
    Źródło:
    Metrology and Measurement Systems; 2017, 24, 3; 509-514
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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