- Tytuł:
- Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures
- Autorzy:
-
Ochalski, T. J.
Żuk, J.
Regiński, K.
Bugajski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1992051.pdf
- Data publikacji:
- 1998-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.66.Fd
78.20.-e - Opis:
- We report on photoreflectance investigations of strained-layer In$\text{}_{0.2}$Ga$\text{}_{0.8}$As/GaAs/Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In$\text{}_{0.2}$Ga$\text{}_{0.8}$As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.
- Źródło:
-
Acta Physica Polonica A; 1998, 94, 3; 463-467
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł