Temat: 73.63.Fg - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Mesoscopic Structures for Microwave-THz Detection
Autorzy:: Sužied.elis, A.
Ašmontas, S.
Požela, J.
Kundrotas, J.
Širmulis, E.
Gradauskas, J.
Kozič, A.
Kazlauskaité, V.
Anbinderis, T.
Powiązania:: https://bibliotekanauki.pl/articles/1813189.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.Fg
73.40.Kp
73.50.Lw
73.63.Kv
Opis:: Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 803-809
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:: Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:: https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:: The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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