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Wyświetlanie 1-4 z 4
Tytuł:
Material parameters of antimonides and amorphous materials for modelling the mid-infrared lasers
Autorzy:
Piskorski, Ł.
Sarzała, R. P.
Powiązania:
https://bibliotekanauki.pl/articles/175109.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
material parameters
computer simulation
mid-infrared devices
GaSb-based lasers
Opis:
The proper modelling of semiconductor device operation with full complexity of many interrelated physical phenomena taking place within its volume is possible only when the material parameters which appear in each part of the self-consistent model are known. Therefore, it is necessary to include in calculations the material composition, temperature, carrier concentration, and wavelength dependences in electrical, thermal, recombination and optical models. In this work we present a complete set of material parameters which we obtained basing mostly on the experimental data found in several dozen publications. To refine the number of equations, we restrict the material list to those which are typically used in edge-emitting lasers and vertical-cavity surface-emitting lasers designed for mid-infrared emission.
Źródło:
Optica Applicata; 2016, 46, 2; 227-240
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm
Autorzy:
Piskorski, Ł.
Sarzała, R. P.
Powiązania:
https://bibliotekanauki.pl/articles/199958.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
simulation of a diode-laser operation
QW VCSELs
mid-infrared radiation
dilute nitrides
Opis:
In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138 -Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 3; 737-744
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range
Autorzy:
Piskorski, Ł.
Frasunkiewicz, L.
Sarzała, R. P.
Powiązania:
https://bibliotekanauki.pl/articles/200684.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
strained QWs
GaInNAs
GaInAsSb
mid-infrared radiation
numerical analysis
napięte konstrukcje QWs
analiza numeryczna
Opis:
In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 3; 597-603
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ITO layer as an optical confinement for nitride edge-emitting lasers
Autorzy:
Kuc, M.
Sokół, A. K.
Piskorski, Ł.
Dems, M.
Wasiak, M.
Sarzała, R. P.
Czyszanowski, T.
Powiązania:
https://bibliotekanauki.pl/articles/200863.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
edge-emitting lasers
InGaN/GaN
computer simulation
ITO
optical confinement
Opis:
This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 147-154
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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