Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Kaminska, T." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 21
Tytuł:
Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
Autorzy:
Borysiewicz, M.
Wojciechowski, T.
Dynowska, E.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1198573.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.70.-m
81.15.Cd
77.55.hf
81.10.Pq
52.27.Cm
Opis:
Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1144-1148
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Shallow Ohmic Contact System to n-GaAs
Autorzy:
Kamińska, E.
Piotrowska, A.
Piotrowski, T. T.
Barcz, A.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1929764.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 804-806
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
Autorzy:
Struk, P.
Pustelny, T.
Gołaszewska, K.
Borysiewicz, M. A.
Kamińska, E.
Wojciechowski, T.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/220412.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Wide band gap oxide semiconductors
ZnO
integrated optics structures
planar waveguides
Opis:
The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
Źródło:
Metrology and Measurement Systems; 2014, 21, 3; 401-412
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Hall Ferromagnet in Magnetically-Doped Quantum Wells
Autorzy:
Andrearczyk, T.
Jaroszyński, J.
Wróbel, J.
Karczewski, G.
Wojtowicz, T.
Papis, E.
Kamińska, E.
Piotrowska, A.
Popović, D.
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2036881.pdf
Data publikacji:
2003-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Nq
72.25.Dc
73.61.Ga
75.50.Pp
Opis:
The article reviews our recent studies on quantum Hall ferromagnetism in diluted magnetic semiconductors. We carried out magnetoresistance studies on modulation-doped, gated heterostructures of (Cd,Mn)Te/(Cd,Mg)Te:I. We put into evidence the formation of Ising quantum Hall ferromagnet with Curie temperature T$\text{}_{C}$ as high as 2 K. Quantum Hall ferromagnetism is manifested by anomalous magnetoresistance maxima. Moreover, magnitude of these spikes depends dramatically on the history of the sample, shows hysteresis when either magnetic field or gate voltage are swept, stretched-exponential time evolution characteristic of glassy systems, and strong Barkhausen noise. Our study suggests that these metastabilities stem from the slow dynamics of ferromagnetic domains.
Źródło:
Acta Physica Polonica A; 2003, 104, 2; 93-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Materials Technology for GaSb-Based optoelectronic Devices
Autorzy:
Piotrowska, A.
Kamińska, E.
Piotrowski, T. T.
Piskorski, M.
Guziewicz, M.
Papis, E.
Gołaszewska-Malec, K.
Kasjuniuk, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952070.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
81.05.Ea
81.40.-z
Opis:
A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 903-906
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Ohmic Conductivity of High Resistivity CdTe
Autorzy:
Łusakowski, J.
Szczytkowski, J.
Szadkowski, K.
Kamińska, E.
Piotrowska, A.
Karczewski, G.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1933850.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.-r
Opis:
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown layers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the current flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 803-806
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance Fluctuations in Quantum Wires of n-CdTe and n-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:
Jaroszyński, J.
Wróbel, J.
Sawicki, M.
Skośkiewicz, T.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Dietl, T.
Kamińska, E.
Papis, E.
Barcz, A.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1934061.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Rn
73.61.Ga
73.20.Fz
Opis:
We present millikelvin studies of magnetoconductance in submicron wires of In-doped n$\text{}^{+}$-CdTe and n$\text{}^{+}$-Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te epilayers. Weak-field magnetoresistance which arises from quantum localization as well as universal conductance fluctuations have been observed. The exchange coupling to magnetic impurities is shown to decrease the correlation field of the fluctuations. This novel effect is interpreted by invoking a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d spin-splitting of the electronic states.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1000-1004
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance Fluctuations in Microstructures of HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Lenard, A.
Plesiewicz, W.
Jaroszyński, J.
Cieplak, Marek
Skośkiewicz, T.
Dietl, T.
Kamińska, E.
Piotrowska, A.
Bulka, B.
Powiązania:
https://bibliotekanauki.pl/articles/1890700.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
Opis:
Microscopic four-contact probes to semimagnetic HgCdMnTe grain-boundary inversion layers have been photolithographically patterned. Magnetoresistance measurements performed on these samples revealed aperiodic conductance fluctuations of the magnitude of the order of e$\text{}^{2}$/h. Quantitative analysis of both fluctuation amplitude and their mean period indicate that we have approached the mesoscopic regime in our system. This opens new possibilities in studies of spin-subsystem dynamics in semimagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 307-310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mesoscopic Phenomena in Microstructures of IV-VI Epilayers
Autorzy:
Grabecki, G.
Dietl, T.
Plesiewicz, W.
Lenard, A.
Skośkiewicz, T.
Kamińska, E.
Piotrowska, A.
Papis, E.
Frank, N.
Bauer, G.
Powiązania:
https://bibliotekanauki.pl/articles/1877113.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
Opis:
Magnetoresistance measurements of photolithographically patterned PbSe and Pb$\text{}_{1-y}$Mn$\text{}_{x}$Se microstructures were performed. Reproducible magnetoconductance fluctuations with the amplitude increasing with decreasing temperature were observed. Unexpectedly, these fluctuations contain a component periodic in the magnetic field, and their magnitude is greater than that expected from the current theory of the universal conductance fluctuations. Possible explanations are discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 551-554
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN
Autorzy:
Matys, M.
Miczek, M.
Adamowicz, B.
Żytkiewicz, Z.
Kamińska, E.
Piotrowska, A.
Hashizume, T.
Powiązania:
https://bibliotekanauki.pl/articles/1492736.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
71.35.-y
73.20.-r
71.55.-i
02.70.Dh
Opis:
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from $10^{15}$ to $10^{19}$ photon $cm^{-2} s^{-1}$) for n-GaN samples with various surface passivating layers $(Al_2O_3, SiO_2)$.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-073-A-075
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Second Harmonic Generation in Spin-Glass Microstructures and Fabrication of Microstructures in IV-VI Epilayers
Autorzy:
Grabecki, G.
Dietl, T.
Cieplak, Marek
Plesiewicz, W.
Lenard, A.
Skośkiewicz, T.
Kamińska, E.
Piotrowska, A.
Żarecka, R.
Springholz, G.
Bauer, G.
Powiązania:
https://bibliotekanauki.pl/articles/1929753.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
Opis:
We studied magnetoconductance of two different mesoscopic systems: microregions containing two-dimensional electron gas adjacent to a grain-boundary plane in bicrystals of Hg$\text{}_{0.79}$Cd$\text{}_{0.19}$Mn$\text{}_{0.02}$Te and photolithographically patterned microstructures of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se. In both systems universal conductance fluctuations and generation of the second-harmonic voltage were observed at T ≤ 1 K. Moreover, in the former system the second harmonic signal exhibited distinct rise when the sample was cooled below the spin-glass freezing temperature (100 mK).
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 781-784
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dimensional Crossovers in Magnetoresistance of Submicron Films and Wires of CdTe:In
Autorzy:
Jaroszyński, J.
Wróbel, J.
Sawicki, M.
Skośkiewicz, T.
Karczewski, G.
Wojtowicz, T.
Kossut, J.
Dietl, T.
Kamińska, E.
Papis, E.
Piotrowska, A.
Duś, R.
Nowakowski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1952536.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
Opis:
We present millikelvin studies of magnetoresistance for epitaxial films and wires of CdTe:In. In comparison to the data with theoretical predictions for the weakly localized regime we put into the evidence the presence of the temperature-induced dimensional crossovers in the studied systems. Our measurements probe the electron phase-breaking rate and indicate that the main dephasing mechanism arises from electron scattering from thermal fluctuations of three- or two-dimensional electron liquid.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1027-1031
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zinc Oxide Semiconductor for Photonics Structures Applications
Autorzy:
Struk, P.
Pustelny, T.
Pustelny, B.
Gołaszewska, K.
Kamińska, E.
Piotrowska, A.
Borysiewicz, M.
Ekielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1506857.pdf
Data publikacji:
2010-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.25.Hz
42.70.-a
42.82.-m
68.35.Ct
Opis:
The paper presents investigations concerning the analysis of photonic structures with grating couplers. In the paper basic theoretically information on photonic structures with grating couplers is presented. The results of numerical investigations on photonic structures with grating couplers are discussed, too. Investigations show an essential influence of the geometrical parameters of grating couplers on the effectiveness of the input and output of optic power into and out of this photonic structure. In the paper the selected results of experimental realizations of photonic structures with grating couplers based on zinc oxide ZnO are presented.
Źródło:
Acta Physica Polonica A; 2010, 118, 6; 1242-1245
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Planar Optical Waveguides for Application in Optoelectronic Gas Sensors
Autorzy:
Golaszewska, K.
Kamińska, E.
Pustelny, T.
Struk, P.
Piotrowski, T.
Piotrowska, A.
Ekielski, M.
Kruszka, R.
Wzorek, M.
Borysiewicz, M.
Pasternak, I.
Gut, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811559.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.82.Et
07.07.Df
42.79.Pw
81.15.-z
Opis:
In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide $TiO_2$ and tin dioxide $SnO_2$ on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.
Źródło:
Acta Physica Polonica A; 2008, 114, 6A; A-223-A-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance Anomalies in Strained Quantum Wires: the Case of PbSe and PbTe
Autorzy:
Grabecki, G.
Wróbel, J.
Dietl, T.
Sawicki, M.
Skośkiewicz, T.
Papis, E.
Kamińska, E.
Piotrowska, A.
Frank, N.
Ueta, Y.
Sprinholtz, G.
Bauer, G.
Powiązania:
https://bibliotekanauki.pl/articles/1950800.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Jv
Opis:
We show that conducting edge channels are formed in free standing wires of PbSe/BaF$\text{}_{2}$ and PbTe/BaF$\text{}_{2}$ as temperature is lowered. The effect results from spatially inhomogeneous strain caused by a difference between the thermal expansion coefficients of the epilayer and the substrate. The presence of the edge channels can explain anomalous mesoscopic effects observed previously in these wires.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 797-800
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 21

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies