Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Kowalski, B" wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 23
Tytuł:
4f Contribution to Valence Band of Pb$\text{}_{1-x}$RE$\text{}_{x}$S (RE = Eu,Gd) Studied by Resonant Photoemission
Autorzy:
Kowalski, B. J.
Gołacki, Z.
Guziewicz, E.
Orłowski, B. A.
Ghijsen, J.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1952558.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
79.60.-i
Opis:
Resonant photoemission experiments were carried out in order to reveal the contributions of partly filled Eu 4f$\text{}^{7}$ and Gd 4f$\text{}^{7}$ shells to the valence bands of Pb$\text{}_{0.95}$Eu$\text{}_{0.05}$S and Pb$\text{}_{0.95}$Gd$\text{}_{0.05}$S crystals. The coupling between these orbitals and the host electronic states is discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1035-1039
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cd$\text{}_{1-x}$Fe$\text{}_{x}$Se/Fe Interface Formation Observed by Means of Photoemission Spectroscopy
Autorzy:
Guziewicz, E.
Orłowski, B. A.
Kowalski, B. J.
Barrett, N.
Martinotti, D.
Guillot, C.
Lacharme, J.-P.
Sebenne, C. A.
Powiązania:
https://bibliotekanauki.pl/articles/1950803.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.-r
79.60.Jv
Opis:
We present a new outlook at the study of metal-semiconductor interface formation. A resonant photoemission spectroscopy tuned to the Fe 3p-3d transition (56 eV) was used to investigate the changes after sequential deposition of Fe atoms on freshly cleaved Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface. In the first stages (0.6-4 ML) of Fe deposition the contribution of Fe 3d electrons to the valence band grows up markedly indicating the increase in Fe content in the Cd$\text{}_{0.86}$Fe$\text{}_{0.14}$Se crystal surface region. When the amount of Fe exceed 40 ML the resonant photoemission spectra became similar to the Fe metal with some contribution of the ternary crystal substrate.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 805-808
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cd_{1-x}Fe_{x}Te Ternary Crystal Formation Studied by Resonant Photoemission
Autorzy:
Guziewicz, E.
Kowalski, B. J.
Gołacki, Z.
Orłowski, B. A.
Johnson, R. L.
Masek, J.
Powiązania:
https://bibliotekanauki.pl/articles/1968113.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Fx
79.60.-i
Opis:
A resonant photoemission was used to study the ternary crystal formation, when small amount of Fe atoms was deposited (in one monolayer range of thickness) on the clean CdTe(100) surface. The constant initial state spectra taken near the Fe 3p-3d transition after Fe deposition and then again after heating process show the existence of two Fano-like resonance. The differences of the energy distribution curves taken for both resonance and antiresonance, respectively, allow us to distinguish two kind of Fe 3d contributions to the valence band: one derived from the metallic Fe islands on the surface and the second - derived from the Fe atoms built into the Cd$\text{}_{1-x}$Fe$\text{}_{x}$Te crystal.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 793-796
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
Autorzy:
Nadolny, A. J.
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Johnson, R.
Powiązania:
https://bibliotekanauki.pl/articles/1992049.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Nr
Opis:
The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 454-458
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
Autorzy:
Guziewicz, E.
Szamota-Sadowska, K.
Kowalski, B. J.
Grodzicka, E.
Story, T.
Orłowski, B. A.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1963380.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Fx
79.60.-i
Opis:
We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 783-787
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Band Structure of Cubic HgS
Autorzy:
Guziewicz, E.
Kowalski, B.
Orłowski, B. A.
Dybko, K.
Witkowska, B.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1873013.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
Opis:
Reflectivity spectra of Hg$\text{}_{1-x}$Fe$\text{}_{x}$S (x < 0.04) and HgSe$\text{}_{1-y}$S$\text{}_{y}$ (y < 0.5) mixed crystals were measured in the vacuum ultraviolet energy range from 4 to 12 eV. Information about the electronic band structure of cubic modification of HgS resulting from the above data is analyzed and discussed.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 395-398
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Structure of Diluted Semimagnetic Semiconductor (Cd,Co)Se
Autorzy:
Cháb, V.
Mašek, J.
Orłowski, B. A.
Kowalski, B. J.
Powiązania:
https://bibliotekanauki.pl/articles/1890829.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.10.Lp
75.50.Pp
79.60.Eq
Opis:
The electronic structure of a new semimagnetic semiconductor (Cd,Co)Se is studied by UPS and calculated by a tight-binding version of the disordered-local-moment theory. The theory accounts for the chemical disorder and for electron interactions within the Co 3d$\text{}^{7}$ shells. Both theory and experiment show Co 3d states deep in the valence band and also at the band edge. The last state seem to be responsible for unique properties of the Co-based semimagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 333-336
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fe 3d Contribution to Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se Valence Band by Means of Angle-Resolved Photoemission
Autorzy:
Orłowski, B. A.
Bonnet, J.
Hricovini, C.
Pinchaux, R.
Górecka, J.
Kowalski, B. J.
Mycielski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1890985.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
79.60.Eq
Opis:
The Angle-Resolved Photoemission Electron Spectroscopy (AR PES) was applied to investigate the electronic structure of HgSe and Hg$\text{}_{1-x}$Fe$\text{}_{x}$Se crystals for (110) surface. The measured set of Angle-Resolved Energy Distribution Curves (AR EDCs) permits to determine some of the elements of the electronic band structure E(k) (energy-momentum dependence for ҐKX and ҐX directions in the Brillouin zone) for measured crystals. The Fe 3d contribution gives the states lying over the edge of the valence band of HgSe crystal (0.25 eV), and into the valence band.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 389-392
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fe 3d Contribution to the Valence Band of Cubic Hg$\text{}_{1-x}$Fe$\text{}_{x}$S - Resonant Photoemission Study
Autorzy:
Kowalski, B. J.
Orłowski, B. A.
Szuszkiewicz, W.
Witkowska, B.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1933837.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
Opis:
Resonant photoemission spectra of cubic Ηg$\text{}_{0.94}$Fe$\text{}_{0.06}$S were measured for photon energies near to the energy of intra atomic Fe 3p$\text{}^{6}$3d$\text{}^{6}$ → 3p$\text{}^{5}$3d$\text{}^{7}$ transition. The difference between the spectra taken at resonance and antiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 791-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Gd 4f and 5d Electrons in Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te Valence Band
Autorzy:
Orłowski, B. A.
Kowalski, B. J.
Gołacki, Z.
Story, T.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1933933.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Fi
Opis:
The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn$\text{}_{0.96}$Gd$\text{}_{0.04}$Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 857-860
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Yb on Valence Band Density of States of CdYbTe and PbYbTe - a Resonant Photoemission Study
Autorzy:
Szamota-Sadowska, K.
Kowalski, B. J.
Guziewicz, E.
Orłowski, B. A.
Sadowski, J.
Gołacki, Z.
Ghijsen, J.
Johnson, R. L.
Belkhou, R.
Radosavkič, D.
Martinotti, D.
Barrett, N.
Guillot, C.
Powiązania:
https://bibliotekanauki.pl/articles/1952185.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
Opis:
Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f$\text{}^{14}$ were observed at the binding energies close to the edge of the valence band while the 4f$\text{}^{13}$ states were revealed deep in the valence band.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 943-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
Autorzy:
Pietrzyk, M. A.
Kowalski, B. J.
Orłowski, B. A.
Knoff, W.
Osinniy, V.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/2047678.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Mq
Opis:
We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 275-281
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Study of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se Crystals
Autorzy:
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1931782.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.20.Fi
Opis:
The reflectivity spectra of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se (x = 0.0, 0.024, 0.031) crystals were measured in the vacuum ultraviolet photon energy range from 4 to 12 eV to find the influence of Co ions on the valence band electronic structure of the HgSe crystal. The structure of the reflectivity spectra was interpreted in terms of the electronic band structure of the binary material (HgSe) assuming direct allowed interband transitions.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 875-878
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Study of HgSe$\text{}_{1-x}$Te$\text{}_{x}$ Crystals
Autorzy:
Kowalski, B. J.
Dybko, K.
Lemańska, A.
Orłowski, B. A.
Powiązania:
https://bibliotekanauki.pl/articles/1923860.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
Opis:
The room temperature reflectivity spectra of HgSe$\text{}_{1-x}$Te$\text{}_{x}$ (x = 0, 0.4, 0.5, 1.0) crystals were measured in the visible and ultraviolet range from 1.5 to 12 eV. The maxima characteristic of the binary HgA$\text{}^{IV}$ compounds can be revealed in the mixed crystals spectra, but their position depends on the crystal composition. There is no duplication of the spectral features in spite of the different energy position of the maxima for HgSe and HgTe. This suggests that the virtual crystal approximation could be used to describe basic optical properties of HgSe$\text{}_{1-x}$Te$\text{}_{x}$.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 845-848
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Reflectivity Study of the Zn$\text{}_{1-x}$Co$\text{}_{x}$Se Crystals
Autorzy:
Kowalski, B. J.
Gołacki, Z.
Orłowski, B. A.
Powiązania:
https://bibliotekanauki.pl/articles/1890987.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ci
Opis:
The room temperature reflectivity spectra of the Zn$\text{}_{1-x}$Co$\text{}_{x}$Se (x = 0, 0.03, 0.05) crystals have been measured in the visible and ultraviolet range from 1.7 to 12 eV. The structure of the spectra was interpreted in terms of the electronic band structure of the binary material (ŻnSe). The experimental results were compared with the reflectivity spectra of the Fe-based semi magnetic semiconductors [1], and the interpretation was confronted with the conclusions derived from the photoemission experiments performed for Cd$\text{}_{1-x}$Co$\text{}_{x}$Se [2] and the tight-binding CPA calculations of the band structure of Zn$\text{}_{1-x}$Co$\text{}_{x}$Se [3].
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 393-396
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 23

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies