- Tytuł:
- THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors
- Autorzy:
-
Nouvel, P.
Torres, J.
Marinchio, H.
Laurent, T.
Palermo, C.
Varani, L.
Teppe, F.
Shiktorov, P.
Starikov, E.
Gruzinskis, V. - Powiązania:
- https://bibliotekanauki.pl/articles/1505652.pdf
- Data publikacji:
- 2011-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.15.Nj
72.20.Ht
72.30.+q - Opis:
- Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of $f_0$ ± 10 GHz (with $f_0$ from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 2; 199-202
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł