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Wyszukujesz frazę "Fedotova, A." wg kryterium: Autor

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    Wyświetlanie 1-4 z 4
    Tytuł:
    Mechanisms of Carrier Transport in $Cu_x(SiO_2)_{1-x}$ Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions
    Autorzy:
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Saad, A.
    Fedotova, V.
    Czarnacka, K.
    Koltunowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402220.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.37.+q
    72.80.Ga
    73.22.-f
    61.46.Df
    64.60.ah
    Opis:
    The present paper investigates the temperature/frequency dependences of admittance Z in the granular $Cu_x(SiO_2)_{1-x}$ nanocomposite films around the percolation threshold $x_{C}$ in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold $x_{C}$ ≈ 0.59 and nearly metallic behaviour beyond the $x_{C}$. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < $x_{C}$ exhibited behavior close to ReZ(f) ≈ $f^{-s}$ with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > $x_{C}$), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 883-886
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetoresistance in n-Si/$SiO_2$/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology
    Autorzy:
    Fedotova, J.
    Ivanou, D.
    Ivanova, Y.
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Streltsov, E.
    Saad, A.
    Tyutyunnikov, S.
    Kołtunowicz, T.
    Demyanov, S.
    Fedotova, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504014.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    81.05.Rm
    73.22.-f
    73.50.Jt
    Opis:
    A study of magnetotransport in the n-Si/$SiO_2$/Ni nanostructures with granular Ni nanorods in $SiO_2$ pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/$SiO_2$/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 133-135
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermoelectric Properties of $Ca_3Co_4O_9$-Based Ceramics Doped with Fe and/or Y
    Autorzy:
    Fedotov, A.
    Mazanik, A.
    Svito, I.
    Saad, A.
    Troyanchuk, I.
    Bushinski, M.
    Fedotova, V.
    Zukowski, P.
    Koltunowicz, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1366301.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    46.25.Hf
    62.20.D-
    82.45.Xy
    Opis:
    We describe here structure and temperature dependences of conductivity σ(T), the Seebeck coefficient α(T), thermal conductivity λ(T) and figure-of-merit ZT(T) in $Ca_3Co_4O_9$ ceramics, doped with Fe and Y, depending on compacting pressure (0.2 or 6 MPa) and temperature (300 < T < 700 K). It is shown that introduction of iron and yttrium to ceramics does not alter the crystalline structure of the material. Increasing the pressure in the compacting process before the additional diffusion annealing leads to a smaller-grained structure and increase σ and λ due to reducing of the synthesized samples porosity. The Seebeck coefficients of nanocomposite ceramics $Ca_3Co_{3.9}Fe_{0.1}O_9$ and $(Ca_{2.9}Y_{0.1})(Co_{3.9}Fe_{0.1})O_9$ have linear dependences on temperature is not changed after increase of compacting pressure. Electrical-to-heat conductivity ratio (σ/λ) for the samples compacted at high (6 GPa) pressure increases not more than 20-30% in comparison with ones compacted at low (0.2 GPa) pressure, whereby ZT is increased more than 50%. The main reason for this effect is samples porosity reduction with the compacting pressure increase.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1344-1347
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anisotropic Magnetoresistance of Ni Nanorod Arrays in Porous SiO₂/Si Templates Manufactured by Swift Heavy Ion-Induced Modification
    Autorzy:
    Fedotova, J.
    Ivanou, D.
    Mazanik, A.
    Svito, I.
    Streltsov, E.
    Saad, A.
    Zukowski, P.
    Fedotov, A.
    Bury, P.
    Apel, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402223.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.Km
    81.15.Jj
    75.47.De
    Opis:
    In this work anisotropic magnetoresistance in nanogranular Ni films and Ni nanorods on Si(100) wafer substrates was studied in wide ranges of temperature and magnetic field. To produce Ni films and nanorods we used electrochemical deposition of Ni clusters either directly on the Si substrate or into pores in SiO₂ layer on the Si substrate. To produce mesopores in SiO₂ layer, SiO₂/Si template was irradiated by a scanned beam of swift heavy 350 MeV ¹⁹⁷Au²⁶⁺ ions with a fluence of 5×10⁸ cm¯² and then chemically etched in diluted hydrofluoric acid. Pores, randomly distributed in the template have diameters of 100-250 nm and heights about 400-500 nm. Comparison of temperature dependences of resistance and magnetoresistance in Ni films and n-Si/SiO₂/Ni structures with Ni nanorods showed that they are strongly dependent on orientation of magnetic field and current vectors relative to each other and the plane of Si substrate. Moreover, magnetoresistance values in n-Si/SiO₂/Ni nanostructures can be controlled not only by electric field applied along Si substrate but also by additionally applied transversal bias voltage.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 894-896
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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