Autor: Piotrowski, J. P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Modeling of HgCdTeLWIR detector for high operation temperature conditions
Autorzy:: Martyniuk, P.
Gawron, W.
Madejczyk, P.
Rogalski, A.
Piotrowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/220771.pdf
Data publikacji:: 2013
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: HgCdTe
IR detector
Auger suppression
HOT detectors
Opis:: The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.
Źródło:: Metrology and Measurement Systems; 2013, 20, 2; 159-170
0860-8229
Pojawia się w:: Metrology and Measurement Systems
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Fast Response Hot (111) HGCDTE MWIR Detectors
Autorzy:: Grodecki, K.
Martyniuk, P.
Kopytko, M.
Kowalewski, A.
Stępień, D.
Kębłowski, A.
Piotrowski, A.
Piotrowski, J.
Gawron, W.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/221254.pdf
Data publikacji:: 2017
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: HgCdTe
MWIR
photodetector
response time
Opis:: In this work we report simulation and experimental results for an MWIR HgCdTe photodetector designed by computer simulation and fabricated in a joint laboratory run by VIGO Sytems S.A. and Military University of Technology. The device is based on a modified N⁺pP⁺ heterostructure grown on 2”., epiready, semi-insulating (100) GaAs substrates in a horizontal MOCVD AIX 200 reactor. The devices were examined by measurements of spectral and time responses as a function of a bias voltage and operating temperatures. The time response was measured with an Optical Parametric Oscillator (OPO) as the source of ~25 ps pulses of infrared radiation, tuneable in a 1.55–16 μm spectral range. Two-stage Peltier cooled devices (230 K) with a 4.1 μm cut-off wavelength were characterized by 1.6 × 10¹² cm Hz^1/2/W peak detectivity and < 1 ns time constant for V > 500 mV.
Źródło:: Metrology and Measurement Systems; 2017, 24, 3; 509-514
0860-8229
Pojawia się w:: Metrology and Measurement Systems
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
Autorzy:: Benyahia, D.
Kubiszyn, Ł.
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1055151.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Hi
68.65.Cd
81.05.Ea
61.05.cp
Opis:: Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 322-324
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through two step passivation technique
Autorzy:: Michalczewski, K.
Ivaldi, F.
Kubiszyn, Ł.
Benyahia, D.
Boguski, J.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1055156.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Ey
73.25.+i
82.45.Cc
Opis:: We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 325-328
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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