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Wyszukujesz frazę "Brusa, R. S." wg kryterium: Autor

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Porosity of Low-κ Materials Studied by Slow Positron Beam
    Autorzy:
    Brusa, R. S.
    Macchi, C.
    Mariazzi, S.
    Karwasz, G. P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2042213.pdf
    Data publikacji:
    2005-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    68.60.Dv
    68.90.+g
    Opis:
    The information about porosity in low-κ materials obtainable by depth profiling with positron annihilation spectroscopy is reviewed. In particular we focus on Doppler broadening spectroscopy and 2-3γ ratio of positronium measurements on SiOCH and amorphous carbon a-C:F:H thin films produced by plasma enhanced chemical vapour deposition.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 4; 702-711
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron-annihilation and photoluminescence studies of nanostructured ZrO2
    Autorzy:
    Fidelus, J. D.
    Karbowski, A.
    Mariazzi, S.
    Brusa, R. S.
    Karwasz, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/146313.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    positron annihilation
    zirconia nanopowders
    photoluminescence
    Opis:
    In the present work, photoluminescence and Doppler broadening depth-resolved positron annihilation spectroscopy was performed on pure zirconia nanopowders. Zirconia nanopowders were grown by a hydrothermal microwave-driven process followed by annealing in oxygen atmosphere. Photoluminescence under 274 nm wavelength excitation from a 150 W high-pressure Xe exhibits similar spectra, in the region from 320 to 820 nm, although its intensity depends on the annealing. Positron annihilation Doppler-broadening spectra show low values of the normalized S-parameter, varying little with the depth, from 0.495 on the surface to 0.47-0.49 in bulk. Both high the annealing temperature and oxygen concentrations, lead to low bulk S-values. The ortho-positronium (o-Ps) fraction is about 10-11% for all samples on the surface, whereas it is reduced to 7-8% in the bulk for samples annealed at 700°C and 5-6% for samples annealed at 800°C. Both photoluminescence (PL) and positron studies show the presence of defects in all samples. The o-Ps signal suggests a high porosity of samples, particularly at a depth down to 10 nm.
    Źródło:
    Nukleonika; 2010, 55, 1; 85-89
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Amorphous Carbon Thin Films Deposited on Si and PET: Study of Interface States
    Autorzy:
    Mariazzi, S.
    Macchi, C.
    Karwasz, G. P.
    Brusa, R. S.
    Laidani, N.
    Bartali, R.
    Gottardi, G.
    Anderle, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043339.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ac
    71.60.+z
    73.20.At
    78.70.Bj
    Opis:
    Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a radio frequency plasma enhanced chemical vapour deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim of these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited the same open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 842-847
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Production of Cold Positronium Atoms
    Autorzy:
    Brusa, R.
    Mariazzi, S.
    Consolati, G.
    Dupasquier, A.
    Quasso, F.
    Giammarchi, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812479.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    36.10.Dr
    36.10.Gv
    Opis:
    Positronium will play a primary role in the next generation of antimatter experiments through the following antihydrogen production reaction: p̅ + Ps* → p̅e⁺ + e¯. In order to study antimatter physical properties (CPT (charge, parity, time) invariance and principle of equivalence test) it is necessary to keep this system at the lowest possible (sub-kelvin) temperatures. This requires the generation of a suitable flux of cold Ps atoms in a vacuum, a non-trivial requirement at the light of the present experimental results. In this paper we discuss the state of the actual knowledge on positronium formation and consequent emission from metallic surfaces and insulators and we show the opportunity to use suitable porous materials to cool positronium through collisions with the inner walls of the pores. We get a rough indication on the geometrical parameters of the pore and we propose a simple experiment to obtain the kinetic energy - and therefore the equivalent temperature - of emitted positronium without using a positron beam.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1301-1306
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profiling of Defects in He Implanted $SiO_2$
    Autorzy:
    Mariazzi, S.
    Toniutti, L.
    Brusa, R.
    Duarte Naia, M.
    Karbowski, A.
    Karwasz, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812538.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    68.55.-a
    61.82.Ms
    61.72.J-
    Opis:
    Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1447-1453
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positronium for antihydrogen production in the AEGIS experiment
    Autorzy:
    Consolati, G.
    Aghion, S.
    Amsler, C.
    Bonomi, G.
    Brusa, R.
    Caccia, M.
    Caravita, R.
    Castelli, F.
    Cerchiari, G.
    Comparat, D.
    Demetrio, A.
    Di Noto, L.
    Doser, M.
    Evans, C.
    Fanì, M.
    Ferragut, R.
    Fesel, J.
    Fontana, A.
    Gerber, S.
    Giammarchi, M.
    Gligorova, A.
    Guatieri, F.
    Haider, S.
    Hinterberger, A.
    Holmestad, H.
    Kellerbauer, A.
    Khalidova, O.
    Krasnicky, D.
    Lagomarsino, V.
    Lansonneur, P.
    Lebrun, P.
    Malbrunot, C.
    Mariazzi, S.
    Marton, J.
    Matveev, V.
    Mazzotta, Z.
    Müller, S.
    Nebbia, G.
    Nedelec, P.
    Oberthaler, M.
    Pacifico, N.
    Pagano, D.
    Penasa, L.
    Petracek, V.
    Prelz, F.
    Prevedelli, M.
    Ravelli, L.
    Rienaecker, B.
    Robert, J.
    Røhne, O.
    Rotondi, A.
    Sandaker, H.
    Santoro, R.
    Smestad, L.
    Sorrentino, F.
    Testera, G.
    Tietje, I.
    Widmann, E.
    Yzombard, P.
    Zimmer, C.
    Zmeskal, J.
    Zurlo, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1057954.pdf
    Data publikacji:
    2017-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    04.80.Cc
    07.77.-n
    36.10.Dr
    78.70.Bj
    Opis:
    The primary goal of the Antihydrogen Experiment: Gravity, Interferometry, Spectroscopy (AEGIS) collaboration is to measure for the first time precisely the gravitational acceleration of antihydrogen, H̅, a fundamental issue of contemporary physics, using a beam of antiatoms. Indeed, although indirect arguments have been raised against a different acceleration of antimatter with respect to matter, nevertheless some attempts to formulate quantum theories of gravity, or to unify gravity with the other forces, consider the possibility of a non-identical gravitational interaction between matter and antimatter. We plan to generate H̅ through a charge-exchange reaction between excited Ps and antiprotons coming from the Antiproton Decelerator facility at CERN. It offers the advantage to produce sufficiently cold antihydrogen to make feasible a measurement of gravitational acceleration with reasonable uncertainty (of the order of a few percent). Since the cross-section of the above reaction increases with n⁴, n being the principal quantum number of Ps, it is essential to generate Ps in a highly excited (Rydberg) state. This will occur by means of two laser excitations of Ps emitted from a nanoporous silica target: a first UV laser (at 205 nm) will bring Ps from the ground to the n=3 state; a second laser pulse (tunable in the range 1650-1700 nm) will further excite Ps to the Rydberg state.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 5; 1443-1449
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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