Wszystkie pola: Karwasz, Z. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Porosity of Low-κ Materials Studied by Slow Positron Beam
Autorzy:: Brusa, R. S.
Macchi, C.
Mariazzi, S.
Karwasz, G. P.
Powiązania:: https://bibliotekanauki.pl/articles/2042213.pdf
Data publikacji:: 2005-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.60.+z
78.70.Bj
68.60.Dv
68.90.+g
Opis:: The information about porosity in low-κ materials obtainable by depth profiling with positron annihilation spectroscopy is reviewed. In particular we focus on Doppler broadening spectroscopy and 2-3γ ratio of positronium measurements on SiOCH and amorphous carbon a-C:F:H thin films produced by plasma enhanced chemical vapour deposition.
Źródło:: Acta Physica Polonica A; 2005, 107, 4; 702-711
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Depth Profiling of Defects in He Implanted $SiO_2$
Autorzy:: Mariazzi, S.
Toniutti, L.
Brusa, R.
Duarte Naia, M.
Karbowski, A.
Karwasz, G.
Powiązania:: https://bibliotekanauki.pl/articles/1812538.pdf
Data publikacji:: 2008-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.60.+z
78.70.Bj
68.55.-a
61.82.Ms
61.72.J-
Opis:: Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
Źródło:: Acta Physica Polonica A; 2008, 113, 5; 1447-1453
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Amorphous Carbon Thin Films Deposited on Si and PET: Study of Interface States
Autorzy:: Mariazzi, S.
Macchi, C.
Karwasz, G. P.
Brusa, R. S.
Laidani, N.
Bartali, R.
Gottardi, G.
Anderle, M.
Powiązania:: https://bibliotekanauki.pl/articles/2043339.pdf
Data publikacji:: 2005-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Ac
71.60.+z
73.20.At
78.70.Bj
Opis:: Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a radio frequency plasma enhanced chemical vapour deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim of these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited the same open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface.
Źródło:: Acta Physica Polonica A; 2005, 107, 5; 842-847
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja