- Tytuł:
- Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
- Autorzy:
-
Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Ivanov, V. Yu.
Godlewski, M.
Leszczyński, M.
Perlin, P.
Suski, T. - Powiązania:
- https://bibliotekanauki.pl/articles/2038288.pdf
- Data publikacji:
- 2004-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.45.+h
78.47.+p
78.67.De - Opis:
- We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
- Źródło:
-
Acta Physica Polonica A; 2004, 106, 2; 273-279
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł