Wszystkie pola: Laurent, T. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: THz Emission Induced by an Optical Beating in Nanometer-Length High-Electron-Mobility Transistors
Autorzy:: Nouvel, P.
Torres, J.
Marinchio, H.
Laurent, T.
Palermo, C.
Varani, L.
Teppe, F.
Shiktorov, P.
Starikov, E.
Gruzinskis, V.
Powiązania:: https://bibliotekanauki.pl/articles/1505652.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.15.Nj
72.20.Ht
72.30.+q
Opis:: Experimental results of direct measurement of resonant terahertz emission optically excited in InGaAs HEMT channels are presented. The emission was attributed to two-dimensional plasma waves excited by photogeneration of electron-hole pairs in the HEMT channel at the frequency of the beating of two cw-laser sources. The presence of resonances for the radiation emission in the range of $f_0$ ± 10 GHz (with $f_0$ from 0.3 up to 0.5 THz) detected by a Si-bolometer is found. The intensity of THz emission exhibits a nonlinear growth with increase of the pumping power.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 199-202
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Measurement of Pulsed Current-Voltage Characteristics of AlGaN/GaN HEMTs from Room Temperature to~15~K
Autorzy:: Laurent, T.
Sharma, R.
Torres, J.
Nouvel, P.
Blin, S.
Palermo, C.
Varani, L.
Cordier, Y.
Chmielowska, M.
Faurie,, J.
Beaumont, B.
Powiązania:: https://bibliotekanauki.pl/articles/1505650.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ey
73.21.Fg
73.40.-c
Opis:: We report measurements of the pulsed and dc current-voltage characteristics of AlGaN/GaN high-electron-mobility transistors as functions of geometry, temperature (from 300 down to 15 K), and operating conditions. An increase in the drain current with shortening of the pulse width from 1 μs to 400 ns is found to be significant at room temperature whilst this behavior is inverted or even removed at 77 and 15 K temperatures.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 196-198
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Voltage Controlled Terahertz Transmission Enhancement through GaN Quantum Wells
Autorzy:: Laurent, T.
Sharma, R.
Torres, J.
Nouvel, P.
Blin, S.
Chusseau, L.
Palermo, C.
Varani, L.
Cordier, Y.
Chmielowska, M.
Faurie, J.
Beaumont, B.
Shiktorov, P.
Starikov, E.
Gruzinskis, V.
Powiązania:: https://bibliotekanauki.pl/articles/1505459.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.-e
78.67.De
73.21.Fg
Opis:: We report transmission measurements of GaN quantum well grown on sapphire substrate in the 220-325 GHz frequency band at low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 107-110
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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