- Tytuł:
- Impact of Thin LT-GaN Cap Layers on the Structural and Compositional Quality of MOVPE Grown InGaN Quantum Wells Investigated by TEM
- Autorzy:
-
Ivaldi, F.
Kret, S.
Szczepańska, A.
Czernecki, R.
Kryśko, M.
Grzanka, S.
Leszczyński, M. - Powiązania:
- https://bibliotekanauki.pl/articles/2048084.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.35.bg
68.37.Lp
68.65.Fg - Opis:
- Two samples containing InGaN quantum wells have been grown by metal-organic vapor phase epitaxy on high pressure grown monocrystalline GaN (0001). Different growth temperatures have been used to grow the wells and the barriers. In one of the samples, a low temperature GaN layer (730°C) has been grown on every quantum well before rising the temperature to standard values (900°C). The samples have been investigated by transmission electron microscopy and X-ray diffraction. Photoluminescence spectra have been measured as well. The influence of the LT-GaN has been investigated in regard to its influence on the structural and compositional quality of the sample.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 660-662
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł