- Tytuł:
- Electric Field Stimulated Emission of Electrons from Deep Traps in SiO$\text{}_{2}$
- Autorzy:
-
Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C. - Powiązania:
- https://bibliotekanauki.pl/articles/1929724.pdf
- Data publikacji:
- 1993-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
73.40.Qv
73.60.Hy - Opis:
- An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO$\text{}_{2}$ layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO$\text{}_{2}$.
- Źródło:
-
Acta Physica Polonica A; 1993, 84, 4; 701-704
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł