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    Wyświetlanie 1-7 z 7
    Tytuł:
    Injection of Optically Generated Spins through Magnetic Nonmagnetic Heterointerface: Ruling out Possible Detection Artifacts
    Autorzy:
    Ghali, M.
    Kossut, J.
    Janik, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038227.pdf
    Data publikacji:
    2004-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.-n
    73.61.Ga
    Opis:
    We report on injection of optically created spin-polarized carriers into CdTe-based materials. The injected spins are initially aligned in a diluted magnetic semiconductor CdMnTe layer located on the top of CdMgTe layer in CdMnTe/CdMgTe spintronic generic model structures. A critical discussion of possible artifacts that may complicate the spin detection and its quantitative analysis is given. Although the spin injection efficiency, 80%, has been found by us to be basically independent of the thickness of the spin detecting layer, there is an essential difference between thin and wide detectors related to the strain-induced lifting of the valence band degeneracy in the former, when assessing the efficiency of the spin injection. Most importantly, we observe an effect of switching the spin injection process on and off by an external magnetic field variation within a relatively narrow field range. This effect can be achieved by a careful design of the interface between the diluted magnetic semiconductor and the non-magnetic semiconductor.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 2; 207-214
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
    Autorzy:
    Żakrzewski, A. K.
    Dobaczewski, L.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934051.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    Opis:
    N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 961-964
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Indium Doping of CdTe Grown by Molecular Beam Epitaxy
    Autorzy:
    Karczewski, G.
    Zakrzewski, A.
    Kutrowski, M.
    Jaroszyński, J.
    Dobrowolski, W.
    Grodzicka, E.
    Janik, E.
    Wojtowicz, T.
    Kossut, J.
    Barcz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932089.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    Opis:
    We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 241-244
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetooptical Properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n Junctions
    Autorzy:
    Khoi, Le Van
    Karczewski, G.
    Dobrowolski, W.
    Kossut, J.
    Gałązka, R. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891332.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    78.20.Ls
    72.80.Ga
    Opis:
    The first experimental evidence of the magnetic quantum oscillation in the photovoltaic effect of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n junctions is reported. The p-n junctions were obtained in Pb$\text{}_{1-x}$MnxSe crystals with manganese content, 0 ≤ x ≤ 0.08 by introducing Cd donors by diffusion. Measurements were per formed between 5-85 K and in the presence of the magnetic field 0-7 T in the Faraday and Voigt configurations of the incident infrared radiation of various photon energies in the vicinity of the energy gap of a Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se. Strong oscillatory behavior of the photovoltage was observed as a function of the magnetic field intensity at a constant wavelength of the incident light. Using the model of Adler of the energy band structure modified by the exchange terms, and after identification of the initial and final states of the transitions, we derive the band parameters of the Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se crystals.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 445-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetization Steps in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Observed in Coherent Transport
    Autorzy:
    Jaroszyński, J.
    Dietl, T.
    Wróbel, J.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Maude, D. K.
    van der Linden, P.
    Portal, J. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968114.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Rn
    73.61.Ga
    73.20.Fz
    Opis:
    Magnetoconductance measurements on submicron wires of n$\text{}^{+}$-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te were carried out up to 27 T and down to 100 mK. The inverse correlation field of the universal conductance fluctuations is found to increase abruptly in the vicinity of the magnetization steps due to Mn pairs in CdMnTe. No such effect is observed in similar wires of CdTe. These findings support a recent model, according to which the correlation field of the universal conductance fluctuations in magnetic systems is inversely proportional to the magnetic susceptibility of the localized spins.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 797-800
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Conductance Fluctuations in Quantum Wires of n-CdTe and n-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
    Autorzy:
    Jaroszyński, J.
    Wróbel, J.
    Sawicki, M.
    Skośkiewicz, T.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Dietl, T.
    Kamińska, E.
    Papis, E.
    Barcz, A.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934061.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Rn
    73.61.Ga
    73.20.Fz
    Opis:
    We present millikelvin studies of magnetoconductance in submicron wires of In-doped n$\text{}^{+}$-CdTe and n$\text{}^{+}$-Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te epilayers. Weak-field magnetoresistance which arises from quantum localization as well as universal conductance fluctuations have been observed. The exchange coupling to magnetic impurities is shown to decrease the correlation field of the fluctuations. This novel effect is interpreted by invoking a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d spin-splitting of the electronic states.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 1000-1004
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Exciton Binding Energy in Extremely Shallow Quantum Wells
    Autorzy:
    Kossut, J.
    Furdyna, J. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1877012.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Dx
    71.36.+c
    73.61.Ga
    Opis:
    The usual approach to the problem of excitons in semiconductor quantum wells is to assume that both the electron or the hole are primarily localized in the potential well regions defined by the band offsets, i.e., that the quantum wells are deep. We re-examine the problem of the exciton in the presence of a very shallow square well potential due to the (small) conduction and valence band offsets in a semiconducting heterostructure. We show that the combined effects of the shallow well and the Coulomb interaction between the electron and the hole are equivalent to an effective potential acting on the center-of-mass of a three-dimensional exciton. We calculate the shape of such a potential and show it to be satisfactorily approximated by the potential of a parabolic well.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 528-532
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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