Autor: Weber, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Deep Defects in Low-Temperature GaAs
Autorzy:: Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.80.Ey
Opis:: Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Optical and Electrical Measurements of Low-Temperature InAlAs
Autorzy:: Korona, K. P.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Baranowski, J. M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1923833.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
73.60.Br
78.55.Cr
Opis:: Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 825-828
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: FFirst TSC and DLTS Measurements of Low Temperature GaAs
Autorzy:: Muszalski, J.
Babiński, A.
Korona, K. P.
Kamińska, E.
Piotrowska, A.
Kamińska, M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1891236.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.80.Ey
Opis:: The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 413-416
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja