Autor: Bożek, K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Optical Properties of Molybdenum Disulfide $(MoS_2)$
Autorzy:: Gołasa, K.
Grzeszczyk, M.
Korona, K.
Bożek, R.
Binder, J.
Szczytko, J.
Wysmołek, A.
Babiński, A.
Powiązania:: https://bibliotekanauki.pl/articles/1399110.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 63.22.-m
71.35.-y
78.20.-e
78.30.-j
Opis:: Research of a monolayer and a bulk $MoS_2$ is reported. The room temperature Raman spectra of the natural $MoS_2$ crystals for the both resonant (632.8 nm) and the non-resonant (532 nm) excitation are presented. The apparent differences observed in the spectra from the bulk and the one monolayer $MoS_2$ are discussed. In particular, the feature due to a first order scattering involving the LA(M) phonon in the resonance Raman spectrum of the one monolayer $MoS_2$ was observed and explained in terms of the disorder in the natural crystal. The disorder is also documented by the line-shape of the room-temperature photoluminescence spectra observed from both the bulk and the one monolayer $MoS_2$.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 849-851
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Structural and optical properties of boron nitride grown by MOVPE
Autorzy:: Dąbrowska, A.
Pakuła, K.
Bożek, R.
Rousset, J.
Ziółkowska, D.
Gołasa, K.
Korona, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:: https://bibliotekanauki.pl/articles/1160531.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Gh
78.30.Fs
78.20.-e
Opis:: Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Źródło:: Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates
Autorzy:: Grodecki, K.
Drabińska, A.
Bożek, R.
Wysmołek, A.
Korona, K.
Strupiński, W.
Borysiuk, J.
Stępniewski, R.
Baranowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1791292.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.Tr
78.40.Ri
78.30.Na
63.20.dd
63.20.kd
Opis:: Optical absorption and Raman scattering studies of few-layer epitaxial graphene obtained by high temperature annealing of carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Changing the pressure and annealing time, different stages of the graphene formation were achieved. Optical absorption measurements enabled us to establish average number of graphene layers covering the SiC substrate. Raman scattering experiments showed that integrated intensity of the characteristic 2D peak positively correlated with the number of graphene layers deposited on the SiC substrate. The spectral width of the 2D peak was found to decrease with the number of the deposited graphene layers.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 835-837
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Optical and Electrical Studies of FR1 and FR2 Defects in GaAs
Autorzy:: Dwiliński, R.
Palczewska, M.
Kaczor, P.
Korona, K.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Powiązania:: https://bibliotekanauki.pl/articles/1920972.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
78.50.Ge
76.30.Mi
Opis:: The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 613-616
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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