- Tytuł:
- Enhancement of Electron Mobility and Photoconductivity in Quantum Well $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ οn InP Substrate
- Autorzy:
-
Kulbachinskii, V.
Lunin, R.
Yuzeeva, N.
Galiev, G.
Vasilievskii, I.
Klimov, E. - Powiązania:
- https://bibliotekanauki.pl/articles/1399881.pdf
- Data publikacji:
- 2013-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.10.-d
73.21.Fg
73.63.Hs - Opis:
- Isomorphic $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well $In_{0.53}Ga_{0.47}As$ or by illumination using light with λ = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 2; 345-348
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł