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    Wyświetlanie 1-15 z 15
    Tytuł:
    Electrical Properties of p-ZnTe/n-CdTe Photodiodes
    Autorzy:
    Chusnutdinow, S.
    Makhniy, V.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1409588.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    73.61.Ga
    85.60.Dw
    88.40.jm
    Opis:
    Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thinfilm p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × $10^{-3}$ eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion of these devices.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1077-1079
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
    Autorzy:
    Żakrzewski, A. K.
    Dobaczewski, L.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934051.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    Opis:
    N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 961-964
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Dynamic Dielectric Function "Anomaly" for HgSe:Ga and HgSe:Fe
    Autorzy:
    Szuszkiewicz, W.
    Karczewski, G.
    Jeżewski, M.
    Witkowska, B.
    Mycielski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1887004.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    78.20.Ci
    78.30.Fs
    Opis:
    Reflectivity spectra of HgSe crystals highly doped with Ga and Fe, respectively, were investigated in the spectral region close to the absorption edge at temperatures between 12 K and 295 K. From the analysis of the structure observed in reflectivity the temperature dependence of the Fermi energy was determined for both kinds of crystals.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 369-372
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hole Traps in ZnTe with CdTe Quantum Dots
    Autorzy:
    Zielony, E.
    Płaczek-Popko, E.
    Gumienny, Z.
    Trzmiel, J.
    Karczewski, G.
    Guziewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791335.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    73.21.La
    73.20.Hb
    Opis:
    In this study the capacitance-voltage (C-V) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky-Krastanov growth mode. Comparison of the C-V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 885-887
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Two-Electron DX State in CdTe:In
    Autorzy:
    Skierbiszewski, C.
    Wiśniewski, P.
    Litwin-Staszewska, E.
    Suski, T.
    Wilamowski, Z.
    Zakrzewski, A. K.
    Karczewski, G.
    Jantsch, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952096.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    73.61.Ga
    Opis:
    In this paper we investigate electron emission/capture from/to the DX state of indium in CdTe by means of high pressure freeze-out cycle and steady-state photo-conductivity experiments. The results indicate that the DX state is occupied by two electrons. A comparison with deep level transient spectroscopy data shows that two-electron emission occurs at low temperatures, while one-electron emission takes place at high temperatures.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 927-930
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ferroelectric Field Effect Transistor Based on Modulation Doped CdTe/CdMgTe Quantum Wells
    Autorzy:
    Kolkovsky, V.
    Wojciechowski, T.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811945.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.80.-e
    77.80.Fm
    85.50.Gk
    73.61.Ga
    Opis:
    In this work, we observed effects of changing the electron concentration and electron mobility upon the poling of the $Cd_{0.96}Zn_{0.04}Te$ ferroelectric gate deposited on the top of the CdTe-based modulation doped quantum well structure, which are confirmation of the existence of the electrostatic field originating from the ferroelectric material, which can be controlled by an external voltage. The analysis of the data obtained from the Hall effect measurements showed that the electron mobility and carrier concentration decreased by a factor of 2.5 and 1.5, respectively upon the negative poling of the gate with respect to the poled by the positive voltage. Moreover, the electrostatic field, depending on its directions, causes depletion of accumulation of electrons in the 2D channel, i.e., it is a source of the field effect.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1173-1178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Indium Doping of CdTe Grown by Molecular Beam Epitaxy
    Autorzy:
    Karczewski, G.
    Zakrzewski, A.
    Kutrowski, M.
    Jaroszyński, J.
    Dobrowolski, W.
    Grodzicka, E.
    Janik, E.
    Wojtowicz, T.
    Kossut, J.
    Barcz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932089.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    Opis:
    We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 241-244
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers
    Autorzy:
    Łusakowski, J.
    Karpierz, K.
    Grynberg, M.
    Karczewski, G.
    Wojtowicz, T.
    Contreras, S.
    Callen, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968369.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Jt
    73.61.Ga
    Opis:
    An influence of disorder originated from the substratelayer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface-induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 911-914
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetooptical Properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n Junctions
    Autorzy:
    Khoi, Le Van
    Karczewski, G.
    Dobrowolski, W.
    Kossut, J.
    Gałązka, R. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891332.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    78.20.Ls
    72.80.Ga
    Opis:
    The first experimental evidence of the magnetic quantum oscillation in the photovoltaic effect of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n junctions is reported. The p-n junctions were obtained in Pb$\text{}_{1-x}$MnxSe crystals with manganese content, 0 ≤ x ≤ 0.08 by introducing Cd donors by diffusion. Measurements were per formed between 5-85 K and in the presence of the magnetic field 0-7 T in the Faraday and Voigt configurations of the incident infrared radiation of various photon energies in the vicinity of the energy gap of a Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se. Strong oscillatory behavior of the photovoltage was observed as a function of the magnetic field intensity at a constant wavelength of the incident light. Using the model of Adler of the energy band structure modified by the exchange terms, and after identification of the initial and final states of the transitions, we derive the band parameters of the Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se crystals.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 445-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots
    Autorzy:
    Placzek-Popko, E.
    Szatkowski, J.
    Zielony, E.
    Gumienny, Z.
    Dobaczewski, L.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048047.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ga
    73.21.La
    73.20.Hb
    Opis:
    In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance-voltage (C-V) characteristics within the temperature range of 180-300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C-V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C-V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12 ± 0.03) eV.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 621-623
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Atomic Force Microscopy Study of a Voltage Effect on CdZnTe Crystal Dimensions
    Autorzy:
    Aleszkiewicz, P.
    Wojciechowski, T.
    Fronc, K.
    Kolkovsky, V.
    Janik, E.
    Jakieła, R.
    Mycielski, A.
    Karczewski, G.
    Aleszkiewicz, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811911.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Ns
    73.61.Ga
    77.90.+k
    Opis:
    In this work we studied the influence of an external electric voltage on spatial dimensions of CdZnTe mixed crystals. In order to get an absolute magnitude of the sample thickness and to gain insight to the changes of lateral dimension, in quasi-bulk 3 μm thick CdZnTe layers grown by molecular beam epitaxy square craters were formed by ion sputtering in a secondary ion mass spectrometer. The vertical and lateral dimensions of the craters were studied by the atomic force microscopy. The atomic force microscopy measurement revealed that the thickness of the CdZnTe layer increases in a result of applying a single voltage pulse to the sample surface and decreases reversibly after applying reversely biased voltage. The voltage triggering was high enough to switch the conductivity state of the sample i.e., the effect of thickness change is accompanied by the effect of conductivity switching. The thickness change is significant, reaching several percents of the entire layer thickness.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1041-1047
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reduction of the Optical Losses in CdTe/ZnTe Thin-Film Solar Cells
    Autorzy:
    Chusnutdinow, S.
    Pietruszka, R.
    Zaleszczyk, W.
    Makhniy, V.
    Wiater, M.
    Kolkovsky, V.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375701.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    73.61.Ga
    85.60.Dw
    88.40.jm
    Opis:
    We report on reduction of optical losses in n-CdTe/p-ZnTe thin-film solar cells grown by molecular beam epitaxy. The investigated thin-film devices were grown from elemental sources on monocrystalline, semi-insulating, (100)-oriented GaAs substrates. The optical losses have been reduced by a texturing of the device surface and by depositing of a ZnO antireflection coating. Current-voltage and spectral characteristics of the investigated p-ZnTe/n-CdTe solar cells depend significantly on the preparation of the surface of the ZnTe window. We describe a procedure of chemical etching of the ZnTe window leading to surface texturing. A ZnO layer of proper thickness deposited by low-temperature atomic layer deposition technique on the ZnTe surface forms an effective antireflection coating that leads to the reduction of optical losses. Due to reduction of the optical losses we observe increase of the short-circuit current, $J_{SC}$, by almost 60% and of the energy conversion efficiency by 44%.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1072-1075
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum Hall Ferromagnet in Magnetically-Doped Quantum Wells
    Autorzy:
    Andrearczyk, T.
    Jaroszyński, J.
    Wróbel, J.
    Karczewski, G.
    Wojtowicz, T.
    Papis, E.
    Kamińska, E.
    Piotrowska, A.
    Popović, D.
    Dietl, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036881.pdf
    Data publikacji:
    2003-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.43.Nq
    72.25.Dc
    73.61.Ga
    75.50.Pp
    Opis:
    The article reviews our recent studies on quantum Hall ferromagnetism in diluted magnetic semiconductors. We carried out magnetoresistance studies on modulation-doped, gated heterostructures of (Cd,Mn)Te/(Cd,Mg)Te:I. We put into evidence the formation of Ising quantum Hall ferromagnet with Curie temperature T$\text{}_{C}$ as high as 2 K. Quantum Hall ferromagnetism is manifested by anomalous magnetoresistance maxima. Moreover, magnitude of these spikes depends dramatically on the history of the sample, shows hysteresis when either magnetic field or gate voltage are swept, stretched-exponential time evolution characteristic of glassy systems, and strong Barkhausen noise. Our study suggests that these metastabilities stem from the slow dynamics of ferromagnetic domains.
    Źródło:
    Acta Physica Polonica A; 2003, 104, 2; 93-102
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetization Steps in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Observed in Coherent Transport
    Autorzy:
    Jaroszyński, J.
    Dietl, T.
    Wróbel, J.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Maude, D. K.
    van der Linden, P.
    Portal, J. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968114.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Rn
    73.61.Ga
    73.20.Fz
    Opis:
    Magnetoconductance measurements on submicron wires of n$\text{}^{+}$-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te were carried out up to 27 T and down to 100 mK. The inverse correlation field of the universal conductance fluctuations is found to increase abruptly in the vicinity of the magnetization steps due to Mn pairs in CdMnTe. No such effect is observed in similar wires of CdTe. These findings support a recent model, according to which the correlation field of the universal conductance fluctuations in magnetic systems is inversely proportional to the magnetic susceptibility of the localized spins.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 797-800
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Conductance Fluctuations in Quantum Wires of n-CdTe and n-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
    Autorzy:
    Jaroszyński, J.
    Wróbel, J.
    Sawicki, M.
    Skośkiewicz, T.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Dietl, T.
    Kamińska, E.
    Papis, E.
    Barcz, A.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934061.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Rn
    73.61.Ga
    73.20.Fz
    Opis:
    We present millikelvin studies of magnetoconductance in submicron wires of In-doped n$\text{}^{+}$-CdTe and n$\text{}^{+}$-Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te epilayers. Weak-field magnetoresistance which arises from quantum localization as well as universal conductance fluctuations have been observed. The exchange coupling to magnetic impurities is shown to decrease the correlation field of the fluctuations. This novel effect is interpreted by invoking a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d spin-splitting of the electronic states.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 1000-1004
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-15 z 15

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