Temat: 71.55.Ht - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon
Autorzy:: Kaczor, P.
Kopalko, K.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1921588.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Ht
78.50.Ge
Opis:: A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 677-680
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon
Autorzy:: Kopalko, K.
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1890843.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Ht
78.50.Ge
Opis:: Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD$\text{}^{+}$ . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 345-348
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon
Autorzy:: Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:: https://bibliotekanauki.pl/articles/1929652.pdf
Data publikacji:: 1993-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Ht
78.50.Ge
Opis:: In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
Źródło:: Acta Physica Polonica A; 1993, 84, 3; 555-558
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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