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    Wyświetlanie 1-7 z 7
    Tytuł:
    Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements
    Autorzy:
    Pluska, M.
    Czerwinski, A.
    Szerling, A.
    Ratajczak, J.
    Kątcki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198425.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Hk
    85.30.De
    61.72.-y
    68.37.Hk
    Opis:
    Cathodoluminescence and photoluminescence measurements are commonly accepted as revealing local properties of a specimen region excited by a beam of electrons or photons. However, in the presence of a strong electric field (e.g. a junction) an electron (or light/laser) beam-induced current is generated, which spreads over the structure. A secondary non-local electroluminescence, generated by this current and detected together with the expected luminescence signal, may strongly distort measurement results. This was confirmed by cathodoluminescence measurements on test structures prepared by focused ion beam on AlGaAs/GaAs/InGaAs laser heterostructures. Methods for minimizing the distortion of measured luminescence signals are presented.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1027-1032
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dependence of Nanoelectronic-Structure Defect Detection by Cathodoluminescence on Electron Beam Current
    Autorzy:
    Pluska, M.
    Czerwinski, A.
    Ratajczak, J.
    Szerling, A.
    Kątcki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807514.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Hk
    85.30.De
    61.72.-y
    Opis:
    The dependence of defect detection by cathodoluminescence in a scanning electron microscope on the electron beam current is considered. The examined specimens are AlGaAs/GaAs laser heterostructures with InGaAs quantum well. It is shown that for low electron beam currents, which are typically used, the uniform cathodoluminescence is observed, while for the increasing high electron beam current the oval defects become more and more visible. The influence of electrical properties of the structure on the luminescence detection is explained.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-86-S-88
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of electrochemical nanoelectrode for sensor application Rusing focused ion beam technology
    Autorzy:
    Łaszcz, A.
    Nogala, W.
    Czerwinski, A.
    Ratajczak, J.
    Kątcki, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/778764.pdf
    Data publikacji:
    2014
    Wydawca:
    Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
    Tematy:
    FIB nanotechnology
    nanosensor
    electrochemistry
    Opis:
    The capabilities and applications of the focused ion beam (FIB) technology for detection of an electrochemical signal in nanoscale area are shown. The FIB system, enabling continuous micro- and nanofabrication within only one equipment unit, was used to produce a prototype of electrochemical nanometer-sized electrode for sensor application. Voltammetric study of electrochemically active compound (ferrocenemethanol) revealed the diffusion limiting current (12 pA), corresponding to a disc (planar) nanoelectrode with about 70 nm diameter of contact area. This size is in a good accordance with the designed contact-area (50 nm × 100 nm for width × thickness) of the FIB-produced nanoelectrode. It confi rms that produced nanoelectrode is working properly in liquid solution and may enable correct measurements in nanometer-sized regions.
    Źródło:
    Polish Journal of Chemical Technology; 2014, 16, 3; 40-44
    1509-8117
    1899-4741
    Pojawia się w:
    Polish Journal of Chemical Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of SOI fabrication process using gated-diode measurements and TEM studies
    Autorzy:
    Gibki, J.
    Kątcki, J.
    Ratajczak, J.
    Łukasik, L.
    Jakubowski, A.
    Tomaszewski, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/309219.pdf
    Data publikacji:
    2000
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    microelectronics
    SOI technology
    characterization
    Opis:
    SOI fabrication process was characterized using electrical and TEM methods. The investigated SOI structures included partially and fully depleted capacitors, gated diodes and transistors fabricated on SIMOX substrates. From C-V and I-V measurements of gated diodes, the following parameters of partially depleted structures were determined: doping concentration in both n- and p-type regions, average carrier generation lifetimes in the region under the gate and generation velocity at top and bottom surfaces of the active layer. Structures with short lifetime were studied using a transmission electron microscope. TEM studies indicate that the quality of the active layer in the investigated structures is good. Moreover, these studies were used to verify the thicknesses determined by means of electrical characterization methods.
    Źródło:
    Journal of Telecommunications and Information Technology; 2000, 3-4; 81-83
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
    Autorzy:
    Misiuk, A.
    Bąk-Misiuk, J.
    Bryja, L.
    Kątcki, J.
    Ratajczak, J.
    Jun, J.
    Surma, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030659.pdf
    Data publikacji:
    2002-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.72.Yx
    81.40.Vw
    Opis:
    Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 5; 719-727
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs
    Autorzy:
    Ratajczak, J.
    Łaszcz, A.
    Czerwinski, A.
    Kątcki, J.
    Tang, X.
    Reckinger, N.
    Yarekha, D.
    Larrieu, G.
    Dubois, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807511.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.40.-e
    68.37.Lp
    Opis:
    The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-89-S-91
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission electron microscopy of In(Ga)As quantum dot structure
    Autorzy:
    Kątcki, J.
    Ratajczak, J.
    Łaszcz, A.
    Phillipp, F.
    Paranthoen, C.
    Cheng, X. L.
    Fiore, A.
    Passaseo, A.
    Cingolani, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/378389.pdf
    Data publikacji:
    2003
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Opis:
    The application of transmission electron microscopy (TEM) to the investigation of In(Ga)As quantum dot (QD) structures grown on GaAs substrates is reviewed. Using various examples of the QD structures the advantages of using TEM for the analysis of QDs are presented. From plan-view TEM images the areal density of dots can be determined in real structures where QDs are embedded in the structure. Cross-sectional TEM images inform us about the real geometry of the structure, the shape, width and height as well as the distribution of QDs. It is especially useful for the investigations of multilayer QD structures.
    Źródło:
    Electron Technology : Internet Journal; 2003, 35, 4; 1-6
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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