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Wyszukujesz frazę "Jeon, S." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
A statistical model analysis of yields and fluctuations in 200 GeV Au-Au collisions
Autorzy:
Torrieri, G.
Jeon, S.
Rafelski, J.
Powiązania:
https://bibliotekanauki.pl/articles/148435.pdf
Data publikacji:
2006
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
fluctuations
freeze-out is small
heavy-ion collisions
statistical models
Opis:
We show that the simultaneous measurement of yields and fluctuations is capable of falsifying and constraining the statistical hadronization model. We show how such a measurement can test for chemical non-equilibrium, and distinguish between a high temperature chemically equilibrated freeze-out from a supercooled freeze-out with an oversaturated phase space. We perform a fit, and show that both yields and fluctuations measured at RHIC 200 GeV can be accounted for within the second scenario, with both the light and strange quark phase space saturated significantly above detailed balance. We point to the simultaneous fit of the K/đ fluctuation and the K*/K ratio as evidence that the effect of hadronic re-interactions after freeze-out is small.
Źródło:
Nukleonika; 2006, 51,suppl.3; 99-103
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge transfer fluctuations as a QGP signal
Autorzy:
Jeon, S.
Shi, L.
Bleicher, M.
Powiązania:
https://bibliotekanauki.pl/articles/148475.pdf
Data publikacji:
2006
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
quark-gluon plasma
event-by-event fluctuations
charge transfer fluctuations
Opis:
In this study, we analyze the recently proposed charge transfer fluctuations within a finite pseudorapidity space. As the charge transfer fluctuation is a measure of the local charge correlation length, it is capable of detecting inhomogeneity in the hot and dense matter created by heavy-ion collisions. We predict that going from peripheral to central collisions, the charge transfer fluctuations at midrapidity should decrease substantially while the charge transfer fluctuations at the edges of the observation window should decrease by a small amount. These are consequences of having a strongly inhomogeneous matter where the QGP component is concentrated around midrapidity. We also show how to constrain the values of the charge correlations lengths in both the hadronic phase and the QGP phase using the charge transfer fluctuations. Current manuscript is based on the two recent papers [10, 13].
Źródło:
Nukleonika; 2006, 51,suppl.3; 65-68
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO Nanorods on Nanofibrous ZnO Seed Layers by Hydrothermal Method and Their Annealing Effects
Autorzy:
Yim, K.
Jeon, S.
Kim, M.
Kim, S.
Nam, G.
Lee, D.
Kim, Jin
Kim, Jong
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1491348.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Lm
78.55.Et
Opis:
ZnO nanorods were grown by using the hydrothermal method on p-type Si (100) substrates with nanofibrous ZnO seed layers. Before the ZnO nanorods growth, nanofibrous ZnO seed layers were spin-coated onto the Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. The fibrous ZnO nanorods is possible due to the surface morphology of the nanofibrous ZnO seed layers. To investigate annealing effects of the ZnO nanorods, the post-annealing process was carried out at various temperatures ranging from 300 to 700C under argon conditions. The structural and optical properties of the ZnO nanorods were also affected by the post-annealing treatment.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 214-216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of InAs Coverage on Transition of Size Distribution and Optical Properties of InAs Quantum Dots
Autorzy:
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, D.
Kim, M.
Kwon, Y.
Choe, J.
Kim, J.
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1535820.pdf
Data publikacji:
2010-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.37.Ps
78.55.Cr
78.67.Hc
Opis:
The influence of InAs coverage on the formation of self-assembled quantum dots grown by molecular-beam epitaxy was investigated by atomic force microscopy and photoluminescence measurements. As the InAs coverage increased from 2.0 to 3.0 monolayers, the quantum dot density decreased from 1.1 × $10^{11}$ to 1.36 × $10^{10} cm^{-2}$. This result could be attributed to the coalescence of neighboring small InAs quantum dots resulting in the formation of much larger InAs quantum dots with lower quantum dot density. Atomic force microscopy results revealed that as the InAs quantum dot coverage increased, the transition of size distribution of InAs quantum dots from single-modal to multimodal occurred. The temperature-dependent photoluminescence spectra showed that the photoluminescence spectra red shifted and the photoluminescence peak intensity decreased as the InAs coverage increased. The thermal activation energy was strongly dependent on the InAs coverage, and for InAs quantum dots with 3.0 ML thick InAs coverage, this energy was estimated to be 147 meV.
Źródło:
Acta Physica Polonica A; 2010, 118, 4; 673-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors
Autorzy:
Kim, D.
Kim, G.
Jeon, S.
Cho, M.
Choi, H.
Kim, M.
Lee, D.
Kim, J.
Eom, G.
Leem, J.
Powiązania:
https://bibliotekanauki.pl/articles/1537752.pdf
Data publikacji:
2010-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.67.Hc
78.55.Cr
81.05.Ea
Opis:
Multi-stacked InAs QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/$In_{0.1}Ga_{0.9}As$ strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850°C. At annealing temperature of 600°C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
Źródło:
Acta Physica Polonica A; 2010, 117, 6; 941-944
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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