- Tytuł:
- The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs
- Autorzy:
-
Emam, M.
Houri, S.
Vanhoenacker-Janvier, D.
Raskin, J.-P. - Powiązania:
- https://bibliotekanauki.pl/articles/308245.pdf
- Data publikacji:
- 2009
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
cut-off frequency fT
intrinsic gain
mechanical stress
piezoresistance coefficient
SOI MOSFET - Opis:
- This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezoresistance coefficientis shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2009, 4; 18-24
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł