Autor: Valusis, G. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:: Kundrotas, J.
Čerškus, A.
Ašmontas, S.
Valušis, G.
Sherliker, B.
Halsall, M.
Harrison, P.
Steer, M.
Powiązania:: https://bibliotekanauki.pl/articles/1178273.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.35.-y
78.55.-m
Opis:: We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 245-249
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Optical and Terahertz Characterization of Be-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:: Čechavičius, B.
Kavaliauskas, J.
Krivaitė, G.
Seliuta, D.
Širmulis, E.
Devenson, J.
Valušis, G.
Sherliker, B.
Halsall, M.
Steer, M.
Harrison, P.
Powiązania:: https://bibliotekanauki.pl/articles/2041764.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
85.30.De
Opis:: We report on optical, photoreflectance and surface photovoltage, as well as terahertz photocurrent investigation of Be-doped GaAs/AlAs multiple quantum wells at room and liquid helium temperatures, respectively. From the Franz-Keldysh oscillations observed in photoreflectance spectra we determine built-in electric fields within the structure. Interband transition energies calculated by the transfer matrix method are in qualitative agreement with experimentally determined values for the samples having various, from 2×10$\text{}^{10}$ up to 2.5×10$\text{}^{12}$ cm$\text{}^{-2}$, Be doping densities. The photocurrent observed in the range of 5.4-7.3 THz we associate with photoionization of Be-acceptor states.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 328-332
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells
Autorzy:: Seliuta, D.
Čechavičius, B.
Kavaliauskas, J.
Krivaitė, G.
Grigelionis, I.
Balakauskas, S.
Valušis, G.
Sherliker, B.
Halsall, M.
Lachab, M.
Khanna, S.
Harrison, P.
Linfield, E.
Powiązania:: https://bibliotekanauki.pl/articles/1813214.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.66.-w
85.30.De
Opis:: The authors demonstrate selective detection of terahertz radiation employing berylliumδ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 909-912
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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