Wszystkie pola: Johnson, D. R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of Yb on Valence Band Density of States of CdYbTe and PbYbTe - a Resonant Photoemission Study
Autorzy:: Szamota-Sadowska, K.
Kowalski, B. J.
Guziewicz, E.
Orłowski, B. A.
Sadowski, J.
Gołacki, Z.
Ghijsen, J.
Johnson, R. L.
Belkhou, R.
Radosavkič, D.
Martinotti, D.
Barrett, N.
Guillot, C.
Powiązania:: https://bibliotekanauki.pl/articles/1952185.pdf
Data publikacji:: 1996-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
Opis:: Photoemission measurements using synchrotron radiation were performed on PbYbTe (bulk crystal) and CdYbTe (MBE thin film). The resonant enhancement of the photoemission was applied for investigation of the contribution of Yb 4f electrons to the valence band. The set of the energy distribution curves was collected for energies in the region close to the 4d-4f Fano transition. The Yb 4f$\text{}^{14}$ were observed at the binding energies close to the edge of the valence band while the 4f$\text{}^{13}$ states were revealed deep in the valence band.
Źródło:: Acta Physica Polonica A; 1996, 90, 5; 943-946
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
Autorzy:: Nadolny, A. J.
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Johnson, R.
Powiązania:: https://bibliotekanauki.pl/articles/1992049.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Nr
Opis:: The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 454-458
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Valence Band Density of States and Mn 3d Contribution in Mn$\text{}_{1-x}$Mg$\text{}_{x}$Te
Autorzy:: Kowalski, B. J.
Guziewicz, E.
Kopalko, K.
Orłowski, B. A.
Janik, E.
Wojtowicz, T.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1991616.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.20.Nr
79.60.-i
Opis:: Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn$\text{}_{0.44}$ Mg$\text{}_{0.56}$Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 401-405
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Cr 3d Surface and Bulk States in Sn$\text{}_{1-x}$Cr$\text{}_{x}$Te/Cr Crystals
Autorzy:: Guziewicz, E.
Szamota-Sadowska, K.
Kowalski, B. J.
Grodzicka, E.
Story, T.
Orłowski, B. A.
Johnson, R. L.
Powiązania:: https://bibliotekanauki.pl/articles/1963380.pdf
Data publikacji:: 1997-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.35.Fx
79.60.-i
Opis:: We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investigate the clean surface of a Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano-type resonance tuned to the Cr 3p-3d transition was used. The experiment was designed to follow the Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$ Te/Cr interface formation process. At the clean Sn$\text{}_{0.97}$Cr$\text{}_{0.03}$Te surface, the Cr 3d states contribution to the valence band was found to be positioned 0.8 eV below the Fermi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the Fermi level was also observed.
Źródło:: Acta Physica Polonica A; 1997, 91, 4; 783-787
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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