Wszystkie pola: microwave power - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A Computer-controlled System of High-power Microwave Sources
Autorzy:: Korpas, P.
Gryglewski, D.
Wojtasiak, W.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/226529.pdf
Data publikacji:: 2011
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: SiC
GaN
high power amplifier
PLL synthesizer
microwave sources
Opis:: The paper presents the design and hardware implementation of a computer controlled system composed of up to four high-power microwave sources. Each source provides up to 200 W of continuous wave power. Frequency of each source is stabilized within ±0.5 ppm of the nominal frequency adjustable within 2.35÷2.6 GHz range. All four sources can be synchronized to the same frequency with computer-controlled phase shift between the signals generated by each of them. The paper concentrates on the choice of components for such a system and the properties of the realized hardware implementation.
Źródło:: International Journal of Electronics and Telecommunications; 2011, 57, 1; 121-126
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: A 100 W ISM 2.45 GHz-band power test system
Autorzy:: Wojtasiak, W.
Gryglewski, D.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/307777.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microwave precise heating
high power solid-state amplifier
push-pull GaAs FET
synthetsizer
power measurement unit
Opis:: This paper describes development of solid-state microwave power test system (MPTS) operating over 2.3 to 2.6 GHz with the output power level of 100 W for industrial applications in material processing, and for designing of microwave power industrial equipment. The MPTS unit consists of four major parts: PLL synthesizer, high power solid-state amplifier, detector probes for return losses and leakage measurement and microcontroller. The MPTS system is able to operate in either single fixed-frequency regime, or in swept mode with self-tuning for minimum reflection of a heated load.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 2; 23-28
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: The 100 W class A power amplifier for L-band T/R module
Autorzy:: Wojtasiak, W.
Gryglewski, D.
Sędek, E.
Powiązania:: https://bibliotekanauki.pl/articles/308787.pdf
Data publikacji:: 2002
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: modelling
MESFETs
finite difference time domain method
power transistors
microwave transistors
Opis:: In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P(1dB)>49 dBm, linear gain IS21I>10 dB, and transmitance deviations during the RF pulse: phase delta arg(S2)<0.9° and deltaP(out)<0.2 dB.
Źródło:: Journal of Telecommunications and Information Technology; 2002, 1; 11-13
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: 27 dBm Microwave Amplifiers with Adaptive Matching Networks
Autorzy:: Rosolowski, D.
Wojtasiak, W.
Gryglewski, D.
Powiązania:: https://bibliotekanauki.pl/articles/226524.pdf
Data publikacji:: 2011
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: Adaptive Power Amplifiers (APAs)
components for Software Defined Radio
multi-band devices
multi-mode devices
RF
adaptivity
tunable matching networks
Opis:: The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.
Źródło:: International Journal of Electronics and Telecommunications; 2011, 57, 1; 103-108
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

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